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41
Composition dependent band offsets of ZnO and its ternary alloys
H.T. Yin, J.L. Chen, Y. Wang, J. Wang, H. Guo
Scientific Reports, Vol.7, 41567:1-7, 2017
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(Times Cited: 8, on 05/10/2018)
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42
Ferroelectricity and Tunneling Electroresistance Effect Driven by Asymmetric Polar Interfaces in All-Oxide Ferroelectric Tunnel Junctions
L.L. Tao, J. Wang
Applied Physics Letters, Vol.108(6), 062903:1-5, 2016
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(Times Cited: 20, on 05/10/2018)
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43
Enhanced tunneling electroresistance in multiferroic tunnel junctions due to the reversible modulation of orbitals overlap
L. Jiang, L.L. Tao, B.S. Yang, J. Wang, X.F. Han
Applied Physics Letters, Vol.109(19), 192902:1-6, 2016
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(Times Cited: 2, on 13/02/2018)
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44
Valley Seebeck Effect in Gate Tunable Zigzag Graphene Nanoribbons
Z.Z. Yu, F.M. Xu, J. Wang
Carbon, Vol.99, 451-455, 2016
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(Times Cited: 8, on 05/10/2018)
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45
Dynamic shot noise in a quantum dot coupled with Majorana fermions under the perturbation of microwave fields
H.K. Zhao, J. Zhang, J. Wang
The European Physical Journal B, Vol.89(11), 255:1-13, 2016
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46
Atomistic Simulations of Device Physics in Monolayer Transition Metal Dichalcogenide Tunneling Transistors
F. Liu, J. Wang, H. Guo
IEEE Transactions on Electron Devices, Vol.63(1), 311-317, 2016
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(Times Cited: 6, on 05/10/2018)
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47
Ferroelectricity and Tunneling Electroresistance Effect in Asymmetric Ferroelectric Tunnel Junctions
L.L. Tao, J. Wang
Journal of Applied Physics, Vol.119(22), 224104:1-7, 2016
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(Times Cited: 9, on 05/10/2018)
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48
Strain-tunable ferroelectricity and its control of Rashba effect in KTaO3
L.L. Tao, J. Wang
Journal of Applied Physics, Vol.120(23), 234101:1-6, 2016
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(Times Cited: 4, on 22/11/2018)
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49
Impact of edge states on device performance of phosphorene heterojunction tunneling field effect transistors
F. Liu, J. Wang, H. Guo
Nanoscale, Vol.8(42), 18180-18186, 2016
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(Times Cited: 4, on 25/07/2018)
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50
Giant Tunnel Magneto-Resistance in Graphene Based Molecular Tunneling Junction
B. Wang, J.W. Li, Y.J. Yu, Y.D. Wei, J. Wang, H. Guo
Nanoscale, Vol.8(6), 3432-3438, 2016
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(Times Cited: 12, on 22/11/2018)
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51
Photoinduced Valley-Polarized Current of Layered MoS2 by Electric Tuning
Y.J. Yu, Y.F. Zhou, L.H. Wan, B. Wang, F.M. Xu, Y.D. Wei, J. Wang
Nanotechnology, Vol.27(18), 185202:1-6, 2016
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(Times Cited: 7, on 05/10/2018)
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52
Negative capacitance transistors with monolayer black phosphorus
F. Liu, Y. Zhou, Y.J. Wang, X.Y. Liu, J. Wang, H. Guo
npj Quantum Materials, Vol.1, 16004:1-6, 2016
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(Times Cited: 15, on 22/11/2018)
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53
Nonequilibrium Spin Injection in Monolayer Black Phosphorus
M.Y. Chen, Z.Z. Yu, Y. Wang, Y.Q. Xie, J. Wang, H. Guo
Physical Chemistry Chemical Physics, Vol.18(3), 1601-1606, 2016
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(Times Cited: 8, on 30/05/2018)
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54
Full-Counting Statistics of Transient Energy Current in Mesoscopic Systems
Z.Z. Yu, G.M. Tang, J. Wang
Physical Review B, Vol.93(19), 195419:1-9, 2016
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(Times Cited: 12, on 05/10/2018)
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55
Spin-Dependent Seebeck Effects in Graphene-Based Molecular Junctions
J.W. Li, B. Wang, F.M. Xu, Y.D. Wei, J. Wang
Physical Review B, Vol.93(19), 195426:1-10, 2016
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(Times Cited: 24, on 22/11/2018)
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56
Anderson Localization from the Berry-Curvature Interchange in Quantum Anomalous Hall Systems
Z.H. Qiao, Y.L. Han, L. Zhang, K. Wang, X.Z. Deng, H. Jiang, S.Y.A. Yang, J. Wang, Q. Niu
Physical Review Letters, Vol.117(5), 056802:1-6, 2016
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(Times Cited: 7, on 22/11/2018)
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57
Device Performance Simulations of Multilayer Black Phosphorus Tunneling Transistors
F. Liu, Q. Shi, J. Wang, H. Guo
Applied Physics Letters, Vol.107(20), 203501:1-5, 2015
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(Times Cited: 1, on 25/07/2017)
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58
Dynamic Spin-Flip Shot Noise of Mesoscopic Transport through a Toroidal Carbon Nanotube
H.K. Zhao, J. Zhang, J. Wang
Europhysics Letters, Vol.109(1), 18003:1-6, 2015
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(Times Cited: 3, on 07/12/2017)
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59
A Theoretical Investigation of Orientation-Dependent Transport in Monolayer MoS2 Transistors at the Ballistic Limit
F. Liu, Y.J. Wang, X.Y. Liu, J. Wang, H. Guo
IEEE Electron Device Letters, Vol.36(10), 1091-1093, 2015
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(Times Cited: 7, on 30/05/2018)
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60
Gate Controlled Electronic Transport in Monolayer MoS2 Field Effect Transistor
Y.F. Zhou, H.M. Xian, B. Wang, Y.J. Yu, Y.D. Wei, J. Wang
Journal of Applied Physics, Vol.117(10), 104307:1-4, 2015
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(Times Cited: 7, on 05/10/2018)