Experimental Condensed Matter Physics Group

Combined images of self-assembled InGaAs QDs uncapped with GaAs layer
AFM image, PL/ PLE spectra and theoretical results of self-assembled InGaAs QDs uncapped with GaAs layer


Academic staff

Research staff


Prof. Xiaodong CUI
Prof. Shijie XU
Dr. Sihong LI
Mr. Zhicheng SU
Dr. Fei TANG
Dr. Tengfei YAN
Dr. Bairen ZHU
Mr. Yitian BAO (PhD)
Mr. Xiangzhou LAO(PhD)
Mr. Dian LI (PhD)
Mr. Xiaorui WANG (PhD)
Mr. Xiong WANG (PhD)
Ms. Chengrong WEI (PhD)
Mr. Ke XIAO (PhD)
Mr. Siyuan YANG (PhD)


Research Activities

  1. Experimental Solid State Physics (X.D. Cui)
    The emphasis of this research lab is on characterizations and applications of low dimensional materials, particularly emerging semiconductors.
  2. Novel Optical Properties of Semiconductor Nanostructures (S.J. Xu)
    Optical properties including nonlinear optical properties, electronic structures, electron-phonon interactions, ultrafast phenomena, phonon and defect states in new semiconductor nanostructures such as self-assembled quantum dots, nanocrystals and new two-dimensional transition metal dichalcogenides are our current research interests. In addition, optoelectronic device applications of the semiconductor nanostructures are also our research interest. The materials being investigated by us include III-nitrides, SiC, traditional III-V and II-VI compound semiconductors as well as new 2D transition metal dichalcogenides. The laboratory has been already equipped by variable-temperature (4.2 K-300 K) photoluminescence system, scanning confocal micro-Raman image/spectroscopy system, variable-temperature (10 K-330 K) broadband (200 nm-1700 nm) emission/absorption/reflection spectroscopy, pump-probe based ultrafast (sub-ps) and gated integrator + boxcar averager based (20 ns to ms) time-resolved photoluminescence system, and newly-established low-temperature magneto-photoluminescence spectroscopy with super high spectral resolution. Currently, a pump-probe based fs laser source + scanning confocal microscopy system is being implemented by us, which enables us optically investigate ultrafast quantum processes and even imagine such processes occurring in individual semiconductor nanostructures.

    Further information of the group can be found at http://www.physics.hku.hk/~laser.

Some Representative Publications

(For the complete publication list of the department, please go back to Research.)

Prof. X.D. Cui

  1. “Anomalously robust valley polarization and valley coherence in bilayer WS2”, B. Zhu, H.L.Zeng, J.F. Dai, Z.R. Gong and X.D. Cui, Proceedings of the National Academy of Sciences of the United States of America (PNAS), 111, 11606-11611 (2014) 
  2. "Optical signature of symmetry variations and spin-valley coupling in atomically thin tungsten dichalcogenides", H. Zeng, G.B. Liu, J. Dai, Y. Yan, B. Zhu, R. He, L. Xie, S. Xu, X. Chen, W. Yao and X.D. Cui, Scientific Reports, 3, 1068 (2013) 
  3. "Valley polarization in MoS2 monolayers by optical pumping", H.L. Zeng, J.F. Dai, W. Yao, D. Xiao and X.D. Cui, Nature Nanotechnology, 7, 490-493 (2012) 
  4. “Magnetoelectric Photocurrent Generated by Direct Interband Transitions in InGaAs/InAlAs Two-Dimensional Electron Gas”, J.F. Dai, H.F. Lu, C.L. Yang, S.Q. Shen, F.C. Zhang and X.D. Cui; Physical Review Letters, 104, 246601 (2010) 
  5. “Observation of exciton-phonon sideband in individual metallic single-walled carbon nanotubes”, H.L. Zeng, H.B. Zhao, F.C. Zhang and X.D. Cui, Physical Review Letters, 102, 136406 (2009) 

For details, please refer to the Homepage of Nanostructure Characterizations Lab.

Prof. S.J. Xu

  1. “Electroluminescence Probe of Internal Processes of Carriers in GaInP Single Junction Solar Cell”, Z.C. Su, S.J. Xu, R.X. Wang, J.Q. Ning, J.R. Dong, S.L. Lu, and H. Yang, Solar Energy Materials and Solar Cells 168, 201 (2017).
  2. “A generalized model for time-resolved luminescence of localized carriers and applications: Dispersive thermodynamics of localized carriers”, Zhicheng Su and Shijie Xu, Scientific Reports 7, 13 (2017)
  3. “Triplet harvesting in luminescent Cu(I) complexes by thermally activated luminescence mechanism transition: Impact of molecular structure”, Z.C. Su, C.C. Zheng, G. Cheng, C.-M. Che, and S.J. Xu, Journal of Materials Chemistry C, 5, 4488 (2017)
  4. “Excitation Dependent Phosphorous Property and New Model of the Structured Green Luminescence in ZnO”, Honggang Ye, Zhicheng Su, Fei Tang, Mingzheng Wang, Guangde Chen, Jian Wang, and Shijie Xu, Scientific Reports 7, 41460 (2017)
  5. “Carrier Localization Effects in InGaN/GaN Multiple-Quantum-Wells LED Nanowires: Luminescence Quantum Efficiency Improvement and “Negative” Thermal Activation Energy”,Wei Bao, Zhicheng Su, Changcheng Zheng, Jiqiang Ning, and Shijie Xu, Scientific Reports 6, 34545 (2016)
  6. “A set of manganese ions activated fluoride phosphors (A2BF6:Mn4+, A=K, Na, B=Si, Ge, Ti): Synthesis below 0 oC and efficient room-temperature photoluminescence”, F. Tang, Z.C. Su, H.G. Ye, M.Z. Wang, X. Lan, D.L. Philips, Y.G. Cao, and S.J. Xu, Journal of Materials Chemistry C, 4, 9561 (2016)
  7. “Transition of radiative recombination channels from delocalized states to localized states in a GaInP alloy with partial atomic ordering: a direct optical signature of Mott transition?”, Z. C. Su, J. Q. Ning, Z. Deng, X. H. Wang, S. J. Xu, R. X. Wang, S. L. Lu, J. R. Dong, and H. Yang, Nanoscale, 8, 7113-7118 (2016)
  8. “Photoluminescence and Raman mapping characterization of WS2 monolayers prepared using top-down and bottom-up methods”, X.H. Wang, J.Q. Ning, C.C. Zheng, B.R. Zhu, L. Xie, H.S. Wu, and S.J. Xu,* Journal of Materials Chemistry C, 3, 2589-2592 (2015) 
  9. “Structural dependences of localization and recombination of photogenerated carriers in the top GaInP subcells of GaInP/GaAs double-junction tandem solar cells”, Z. Deng, J.Q. Ning, Z.C. Su, S.J. Xu,* Z. Xing, R.X. Wang, S.L. Lu, J.R. Dong, B.S. Zhang and H. Yang, ACS Applied Materials & Interfaces, 7, 690-695 (2015) 
  10. “Luminescence signature of free exciton dissociation and liberated electron transfer across the junction of graphene/GaN hybrid structure”, J. Wang, C.C. Zheng, J.Q. Ning, L.X. Zhang, W. Li, Z.H. Ni, Y. Chen, J.N. Wang and S.J. Xu,* Scientific Reports, 5, 7687 (2015) 
  11. “Polarized and non-polarized photoluminescence of GaInP2 alloy with partial CuPt-type atomic ordering: ordered domains vs. disordered regions”, J.Q. Ning, S.J. Xu,* Z. Deng and Z.C. Su, Journal of Materials Chemistry C, 2, 6119-6124 (2014) 
  12. “Nature of red luminescence band in research-grade ZnO single crystals: A 'self-activated' configurational transition”, Y. N. Chen, S. J. Xu, C. C. Zheng, J. Q. Ning, F. C. C. Ling, W. Anwand, G. Brauer, and W. Skorupa, Applied Physics Letters, 105, 041912 (2014) 
  13. “Two-electron-satellite transition of donor bound exciton in ZnO: Radiative Auger effect”, X.H. Wang and S.J. Xu,* Applied Physics Letters, 102, 181909 (2013) 
  14. “Radiative recombination of carriers in the GaxIn1-xP/GaAs double-junction tandem solar cells”, Z. Deng, R.X. Wang, J.Q. Ning, C.C. Zheng, W. Bao, S.J. Xu,* X.D. Zhang, S.L. Lu, J.R. Dong, B.S. Zhang and H. Yang, Solar Energy Materials & Solar Cells, 111, 102-106 (2013) 

For details, please refer to the Homepage of Laser Spectroscopy Lab

Last updated on 11 September 2017