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 A new analytical model was
developed by addressing the significant contributions of free
electron in the conduction band of semiconductor besides the
trapped electrons in shallow donors, which is able to
quantitatively interpret the non-exponential decay patterns of
phosphorescence signal and abnormal temperature behaviors.
This is an important progress in understanding the long
persistent phosphorescence. It may produce long-term
significant impact on phosphorescence science and technology
due to the generalization of the model for quantitative
interpretation to phosphorescence in high-quality n-type wide
bandgap semiconductors, as well as technical application in
the examination of shallow donors in semiconductors.