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Highlights

 

 

 

 

 

A new analytical model was developed by addressing the significant contributions of free electron in the conduction band of semiconductor besides the trapped electrons in shallow donors, which is able to quantitatively interpret the non-exponential decay patterns of phosphorescence signal and abnormal temperature behaviors. This is an important progress in understanding the long persistent phosphorescence.

 

 

 

See details in PCCP, inside cover paper.