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Past Events
Atomically thin electronic materials for post Moore era device applications
(Joint Colloquium of the Department of Mechanical Engineering, the Department of Physics and the HKU-UCAS Joint Institute of Theoretical and Computational Physics)
| Speaker: | Prof. Peide (Peter) Ye |
| Affiliation: | Elmore School of Electrical and Computer Engineering, Purdue University, USA |
| Date: | November 10, 2022 (Thursday) |
| Time: | 10:30 a.m. |
| Venue: | [In Person] CPD-1.21, Run Run Shaw Tower, Centennial Campus, The University of Hong Kong [Zoom] https://hku.zoom.us/j/99112535180?pwd=ZzVEcmZoNlRieGxFOWFsRmZWWHdiUT09 Meeting ID: 991 1253 5180 Password: 393163 |
Abstract
In the past decade, the semiconductor industry is slowly changing from the classical scaling era by geometric miniaturization to the effective scaling era by exploring vertical dimension through monolithic three dimensional integration and heterogeneous integration techniques. As silicon technology advances to 3 nm node and beyond, back end of line (BEOL) compatible monolithic 3D integration is considered as the top choice in order to keep improving chip performance. However, new materials and device development with a maximum processing temperature of 450℃ is required. In this talk, we will review our recent work on fundamental studies of two types of atomically thin materials - In 2O3 and 2D Tellurium. Atomically thin In2O3 channel can be formed by a BEOL compatible ALD process as logic and memory devices for in-memory computing application and monolithic 3D integration. 2D Tellurium, coined as tellurene sometimes, can be doped as p-type and n-type and unveiled as a very unique Weyl semiconductor topological material.