Past Events

Abstract
 

Indium selenide (In₂Se₃) is a promising III-VI van der Waal layered metal chalcogenide (MC) 2D material comprises of different phases and tunable band gap which make it suitable for many optoelectronic device applications. Here, I will present the growth of 2D In₂Se₃ layered structures by using physical vapor transport (PVT) growth technique on mica substrate. Shape, thickness and lateral size of the grown layers were controlled by changing different operating parameters. Morphological, compositional, structural and optical properties of the grown samples are carried out by employing scanning electron microscopy (SEM), energy dispersive spectroscopy (EDS), atomic force microscopy (AFM), Raman spectroscopy and photoluminescence (PL) spectroscopy. Optical microscope and SEM images displayed the multi shaped growth of In₂Se₃ thin layers with larger lateral size for circularly shaped few layers flakes than triangularly shaped flakes. Moreover, different colour contrast in optical microscopy images also indicated the change in thickness of layered In₂Se₃ flakes. EDS mapping demonstrated that the deduced atomic composition of In and Se is 39.1 atm% and 60.9 atm% respectively, which showed that the stoichiometry of grown layer is consistent with the formation of In₂Se₃ compound. AFM topographic profile confirm the growth of monolayer and few layers of In₂Se₃ structure with decreasing roughness as layer thickness decreased. Micro Raman spectrum confirmed the growth of β-In₂Se₃ thin layer having four vibrational modes. All the characterizations showed the growth of layered 2D In₂Se₃ nano structures and it can be exploited as a potential candidate for future optoelectronic applications.

Anyone interested is welcome to attend.