- 1. S. J. Xu, "LO phonon-assisted exciton luminescence
processes in heteroepitaxial GaN films", in: III-nitride semiconductors
: optical properties, ed. by M.O. Manasreh and H.X. Jiang, Taylor
& Francis, New York, 2002, Chap 8, pp.339-361.
- 2. R.X.
Wang, S.J. Xu, and S. Fung, "GaN Schottky Contacts and Their
Applications", in Gallium Nitride: Structure, Thermal Properties and
Applications, ed. by K.O. Peak, Nova Science Publisher, New York, 2014,
pp.119-166.
- 3. S.J. Xu, “Nanotexturing Effects in GaN/InGaN Multi-Quantum-Wells LED Planar Structures”, in III-Nitride Materials, Devices and Nano-Structures, Ed. by Z.C. Feng, (World Scientific Publishing Europe Ltd, London, 2017) Chapter 10, p.341-368.
-
4. S.J. Xu, “Internal Luminescence Mechanisms of III-Nitride LEDs”, in Handbooks of Solid-State-Lighting and LEDs, Ed. by Z.C. Feng, (CRC Press, Taylor & Francis Books, USA, 2017) Chapter 23, p.653-678.
- S.J. Xu, "Evolution of Surface Morphology, Stress and Defect States
with Thickness of GaN Films Directly Grown on Flat 6H-SiC", VASSII,
Hong Kong, Aug. 2002.
- S.J. Xu, "Ultrafast Coherent Dynamics of Carriers in GaN", ISUPTW2004,
Shanghai, May 2004.
- S.J. Xu, "Exciton-LO Phonon Interaction and Fano-type Quantum
Interference in Luminescent Spectra of GaN", ICOSFM2004, Beijing, Aug.
2004.
- S.J. Xu, "Fano Resonance in Phonon-Assisted Photoluminescence Spectra
of Widegap Polar Semiconductors", the 20th Congress of the
International Commission for Optics (ICO20), Changchun, Aug. 2005.
- S.J. Xu, "On the Luminescence of Localized-State Ensemble", CPS-2005,
Wuhan, Sept. 2005.
- S.J. Xu, “Two-Photon Absorption Induced Luminescence and Carrier
Dynamics in InGaN/GaN Quantum Well Structures”, invited Talk in the
HKU-ICCAS Workshop on Molecular Functional Materials, Hong Kong, Dec.
2005.
- S.J. Xu, “Fs-multi-photon-excited fluorescence and carrier dynamics in
ZnO”, invited talk in the 4th Asia Conference on Ultrafast Phenomena,
Hong Kong, Jan. 8-11, 2006.
- S.J. Xu, “New Type of Fano Resonance in Electron Tunneling through a
Doped Superlattice”, invited talk in the Annual Meeting of Chinese
Physics Society, Beijing, Sept. 2006.
- S.J. Xu, “Luminescence imaging and blinking behavior of individual
InGaN nanoclusters formed in GaN matrix”, invited Talk in the 6th
Asia-Pacific Conference on Near-Field Optics (APNFO6), Yellow Mountain,
June 13-17, 2007.
- S.J. Xu, “Two-photon photoluminescence of InGaN/GaN multiple quantum
wells”, invited Talk in the International Conference on Materials for
Advanced Technologies 2007 (ICMAT2007), Singapore, July 1-6, 2007.
- S.J. Xu, “Controllable Excitation and Ultrafast Phenomena of Spinning
Carriers in Ultrafine Quantum Layered Structures”, plenary talk in the
7th National Conference of Molecular Beam Epitaxy, Nanchang, Oct.
20-23, 2007.
- S.J. Xu, “Ultrafast Spin Dynamics of Photoexcited Carriers in Periodic
InGaAs/GaAs Ultrathin Quantum Structures”, invited Talk in the 5th
Asian Conference on Ultrafast Phenomena, Singapore, Jan. 6-9, 2008.
- S.J. Xu, “Exciton-biexciton Dynamics in InGaAs Quantum Wells Studied by
Time-resolved Faraday Rotation Spectroscopy”, invited Talk in the 23rd
Progress in Electromagnetics Research Symposium, Hangzhou, Mar. 24-28,
2008.
- S.J.
Xu, “Controlled Optical Injections and Initial Coherent Dynamics of
Electron Spins in Semiconductor Quantum Disks”, invited talk in the 6th
Asian Conference on Ultrafast Phenomena, Taipei, Jan. 11-13, 2010.
-
S.J. Xu, “Luminescence imaging and blinking behavior of individual
InGaN nanoclusters formed in GaN matrix”, invited talk in the 28th
Progress in Electromagnetics Research Symposium, Boston, MA, USA, July
5-8, 2010.
- S.J. Xu, “New surface optical
phonon mode and Raman imaging in InGaN/GaN MQW nanopillars”, invited
talk in the 8th Cross-Strait Workshop on Nano Science & Technology,
Hong Kong, Dec. 20-22, 2010.
- S.J. Xu, et
al., “Enhanced Femtosecond Second Harmonic Generation in Thin ZnO
Crystal Hollow Rods”, invited talk in the OSA-IEEE-COS Topical Meeting
on Advances In Optoelectronics & Micro/Nano-Optics, Guangzhou, Dec.
3-6, 2010.
- S.J. Xu, “Exciton-Phonon-Impurity
Interactions and Optical Properties in ZnO”, invited talk in the 18th
Semiconductor Physics Conference, Huhehot, Aug. 20-26, 2011.
- S.J.
Xu, “Raman enhancement effect in self-assembled Si nanoclusters grown
on SiC”, invited talk in 2nd International Conference on Frontiers of
Plasmonics (FOP2), Chengdu, Apr. 8-12, 2012.
- S.J.
Xu, “Influence of Internal Strain and External Pressure on Electronic
States and Optical Transitions in Self-assembled InxGa1-xAs /GaAs
Quantum Dots”, invited talk in the 9th Cross Strait Workshop on Nano
Science and Technology, Tainan, Taiwan, Apr. 22-25, 2012.
-
S.J. Xu, “Exciton formation dynamics and temporal behavior of many-body
Fano resonance in ZnO”, invited talk in West Photonics 2013, Xi’an,
Oct. 18-19, 2013.
- S.J. Xu, “Polarized
Photoluminescence and Carrier Localization of GaInP2 Alloy with Partial
CuPt-type Atomic Ordering”, invited talk in THE 17TH ANNUAL CONFERENCE
OF THE PHYSICAL SOCIETY OF HONG KONG, Hong Kong, June 7, 2014.
-
S.J. Xu, “Carrier Localization and Polarized Photoluminescence of
GaInP2 Alloy with Spontaneous Atomic Ordering”, invited talk in the 4th
Advances in Optoelectronics and Micro/nano-optics, Xi’an, Sept. 17-20,
2014.
- S.J. Xu, “Carrier Diffusion and
Mid-Way Recombination in GaInP2/GaAs Multijunction Photovoltaic
Devices”, invited talk in the Asia Communications and Photonics
Conference, Shanghai, Nov. 11-14, 2014.
In addition, Dr. Xu gave a number of invited lectures in following
universities and institutions:
The
Hong Kong University of Science and Technology; The Hong Kong
Polytechnic University; Nanjing University; Zhejiang University;
Zhongshan University; National Taiwan University; Nanyang Technological
University, Singapore; Institute of Physics, Beijing; Institute of
Semiconductors, Beijing; Shanghai Institute of Microsystems and
Information Technology; Suzhou Institute of Nano-tech and Nano-bionics;
Hebei Semiconductor Institute; Xidian University; Xi'an Jiaotong
University; Soochow University; Nanjing Institute of Solid State
Electronics; South University of Science and Technology of China;
Shenzhen University; Tsinghua University; Peking University at Shenzhen.
[2019|2018 |2017 |2016 |2015 |2014 |2013 |2012 |2011 |2010 |2009 |2008 |2007 | 2006 | 2005 | 2004 | 2003 | 2002 | 2001 | 2000 | 1999| 1998| before
1998 ]
- Su Z, Xu S, Effective lifetimes of minority carriers in time-resolved photocurrent and photoluminescence of a doped semiconductor: Modelling of a GaInP solar cell. Solar Energy Materials and Solar Cells. 193 (2019)292-297. DOI: 10.1016/j.solmat.2019.01.029
- Su Z, Xu S, Wang X, Ning J, Wang R, Lu S, Dong J, Yang H. Effective Photon Recycling and Super Long Lived Minority Carriers in GaInP/GaAs Heterostructure Solar Cell: A Time-Resolved Optical Study. IEEE Journal of Photovoltaics (2018).
DOI: 10.1109/JPHOTOV.2018.2804337
- Lao X, Yang Z, Su Z, Wang Z, Ye H, Wang M, Yao X, Xu S. Luminescence and thermal behaviors of free and trapped excitons in cesium lead halide perovskite nanosheets. Nanoscale. 2018;10(21):9949-56. DOI: 10.1039/C8NR01109E
- Wang X, Ye H, Su Z, Yu D, Xu S. Observation of two-times self-focusing of femtosecond laser beam in ZnO crystal by two-photon luminescence. Science Bulletin. 2018 Nov 15;63(21):1392-6.DOI: 10.1016/j.scib.2018.10.004
- Tang F, Su Z, Ye H, Gao W, Pan X, Xu S. Large Negative-Thermal-Quenching Effect in Phonon-Induced Light Emissions in Mn4+-Activated Fluoride Phosphor for Warm-White Light-Emitting Diodes. ACS Omega. 2018 Oct 19;3(10):13704-10.DOI:10.1021/acsomega.8b01127
- Ye H, Su Z, Tang F, Bao Y, Lao X, Chen G, Wang J, Xu S. Probing defects in ZnO by persistent phosphorescence. Opto-Electronic Advances. 2018 Jul 24;1(06):180011.DOI:10.29026/oea.2018.180011
2017
-
Zhicheng Su, and Shijie Xu. "A generalized model for time-resolved
luminescence of localized carriers and applications: Dispersive
thermodynamics of localized carriers." Scientific Reports 7 (2017):13. DOI: 10.1038/s41598-017-00065-3.
- Honggang Ye, Zhicheng Su, Fei Tang, Mingzheng Wang, Guangde
Chen, Jian Wang, and Shijie Xu. "Excitation Dependent Phosphorous
Property and New Model of the Structured Green Luminescence in
ZnO." Scientific Reports 7 (2017): 41460. DOI: 10.1038/srep41460.
- Z.C Su, C.C. Zheng, G. Cheng. C-M.Che and S.J. Xu, "Triplet
harvesting in luminescent Cu(I) complexes by the thermally activated
luminescence transition mechanism: impact of the molecular structure." Journal of Materials Chemistry C. (2017):5,4488-4494. DOI:10.1039/C7TC00773F
- Z.C. Su, S. J. Xu, R. X. Wang, J. Q. Ning, J. R. Dong, S. L.
Lu, and H. Yang. "Electroluminescence probe of internal processes of
carriers in GaInP single junction solar cell." Solar Energy Materials
and Solar Cells 168 (2017): 201-206. DOI:10.1016/j.solmat.2017.04.041
- Su, Z. C.*; Ye, H. G.*; Xiong, Z.; Tang, F.; Lou, Q.; Tang, J.
Y.; Dai, J. Y.; Shan, C. X.; Xu, S. J. Understanding and Manipulating
Luminescence in Carbon Nanodots. Carbon 2017. (*equal contribution)
DOI:10.1016/j.carbon.2017.10.013
- Su, Z. C.; Wang, Z. L.; Yu, J. D.; Yi, Y.; Wang, M. Z.; Wang, L.;
Luo, Y.; Wang, J. N.; Xu, S. J. Managing Green Emission in Coupled
InGaN QW-QDs Nanostructures via Nanoengineering. J. Phys. Chem. C 2017.
DOI:10.1021/acs.jpcc.7b07826
- Ye H, Su ZC, Tang F, Chen G, Wang J, Xu K, Xu SJ. Role of free
electrons in phosphorescence in n-type wide bandgap semiconductors. Physical Chemistry Chemical Physics. 2017. DOI:10.1039/C7CP05796B
- Ye
H, Su Z, Tang F, Zheng C, Chen G, Wang J, Xu S. Extinction of the
zero-phonon line and the first-order phonon sideband in excitonic
luminescence of ZnO at room temperature: the self-absorption effect. Science Bulletin. 2017 Nov 30;62(22):1525-9 DOI:10.1016/j.scib.2017.10.015
- Tang
F, Su ZC, Ye H, Xu SJ, Wang G, Cao Y, Gao W, Pan X. Boosting up
phonon-induced luminescence in red fluoride phosphors via composition
variation driven structural transformations. Journal of Materials Chemistry C. 2017. DOI:10.1039/C7TC04695B
- Tang, Fei, Honggang Ye, Zhicheng Su, Yitian Bao, Wang Guo, and Shijie Xu. "Luminescence Anisotropy and Thermal Effect of Magnetic and Electric Dipole Transitions of Cr3+ Ions in Yb: YAG Transparent Ceramic." ACS applied materials & interfaces 9, no. 50 (2017): 43790-43798.
- Y.
N. Chen, C. C. Zheng, J. Q. Ning, R. X. Wang, C. C. Ling, and S. J. Xu.
"Who make transparent ZnO colorful?–Ion implantation and thermal
annealing effects." Superlattices and Microstructures 99 (2016): 208-213. DOI:10.1016/j.spmi.2016.02.022.
- Z.
C. Su, J. Q. Ning, Z. Deng, X. H. Wang, S. J. Xu, R. X. Wang, S. L. Lu,
J. R. Dong, and H. Yang. "Transition of radiative recombination
channels from delocalized states to localized states in a GaInP alloy
with partial atomic ordering: a direct optical signature of Mott
transition?." Nanoscale 8, 13 (2016): 7113-7118. DOI: 10.1039/C5NR07252B.
- X.
H. Wang, J. Q. Ning, Z. C. Su, C. C. Zheng, B. R. Zhu, L. Xie, H. S.
Wu, and S. J. Xu. "Photoinduced doping and photoluminescence signature
in an exfoliated WS 2 monolayer semiconductor." RSC Advances 6 (2016): 27677-27681, DOI: 10.1039/C6RA01836J.
-
Zhuo Deng, Jiqiang Ning, Rongxin Wang, Zhicheng Su, Shijie Xu, Zheng
Xing, Shulong Lu, Jianrong Dong, and Hui Yang. "Influence of
temperature and reverse bias on photocurrent spectrum and supra-bandgap
spectral response of monolithic GaInP/GaAs double-junction solar
cell." Frontiers of Optoelectronics 9, 2 (2016): 306-311. DOI: 10.1007/s12200-016-0599-y.
-
M. Z. Wang, and S. J. Xu. "Band-edge optical transitions in a
nonpolar-plane GaN substrate: exciton–phonon coupling and temperature
effects." Semiconductor Science and Technology 31, 9 (2016): 095004. DOI:10.1088/0268-1242/31/9/095004.
- Wei
Bao, Zhicheng Su, Changcheng Zheng, Jiqiang Ning, and Shijie Xu.
"Carrier Localization Effects in InGaN/GaN Multiple-Quantum-Wells LED
Nanowires: Luminescence Quantum Efficiency Improvement and “Negative”
Thermal Activation Energy." Scientific Reports 6 (2016), DOI:10.1038/srep34545.
-
Fei Tang, Zhicheng Su, Honggang Ye, Mingzheng Wang, Xin Lan, David Lee
Phillips, Yongge Cao, and Shijie Xu. "A set of manganese ion activated
fluoride phosphors (A 2 BF 6: Mn 4+, A= K, Na, B= Si, Ge, Ti):
synthesis below 0° C and efficient room-temperature
photoluminescence." Journal of Materials Chemistry C (2016), DOI:10.1039/C6TC02737G.
-
X. H. Wang, Z. C. Su, J. Q. Ning, M. Z. Wang, S. J. Xu, S. Han, F. Jia,
D. L. Zhu, and Y. M. Lu. “Influence of Lattice Vibrations on
Luminescence and Transfer of Excitons in WS 2 Monolayer
Semiconductors.” Journal of Physics D: Applied Physics 49, 46 (2016): 465101. DOI:10.1088/0022-3727/49/46/465101.
-
Zhuo Deng, Jiqiang Ning, Zhicheng Su, Shijie Xu, Zheng Xing, Rongxin
Wang, Shulong Lu, Jianrong Dong, Baoshun Zhang, and Hui Yang.
"Structural dependences of localization and recombination of
photogenerated carriers in the top GaInP subcells of GaInP/GaAs
double-junction tandem solar cells." ACS applied materials & interfaces, 7, 690-695 (2015), DOI: 10.1021/am506976n.
-
Jun Wang, Changcheng Zheng, Jiqiang Ning, Lixia Zhang, Wei Li, Zhenhua
Ni, Yan Chen, Jiannong Wang, and Shijie Xu, "Luminescence signature of
free exciton dissociation and liberated electron transfer across the
junction of graphene/GaN hybrid structure", Scientific Reports, 5, 7687 (2015), DOI: 10.1038/srep07687.
- Wang,
X. H., J. Q. Ning, C. C. Zheng, B. R. Zhu, L. Xie, H. S. Wu, and S. J.
Xu. "Photoluminescence and Raman mapping characterization of WS 2
monolayers prepared using top-down and bottom-up methods." Journal of Materials Chemistry C, 3, 2589-2592 (2015), DOI: 10.1039/c5tc00016e.
-
Li Yue, Peng Wang, Kai Wang, Xiaoyan Wu, Wenwu Pan, Yaoyao Li, Yuxin
Song, Yi Gu, Qian Gong, Shumin Wang, Jiqiang Ning and Shijie Xu. "Novel
InGaPBi single crystal grown by molecular beam epitaxy."Applied Physics Express, 8, 041201 (2015), DOI:10.7567/APEX.8.041201.
- Ning,
J. Q., C. C. Zheng, L. X. Zheng, and S. J. Xu. “Beyond Spatial
Correlation Effect in Micro-Raman Light Scattering: An Example of
Zinc-Blende GaN/GaAs Hetero-Interface.” Journal of Applied Physics, 118, 073101 (2015), DOI:10.1063/1.4928618.
- Ning,
J. Q., Zheng, C. C., Zhang, X. H., Xu, S. J., "Strong quantum
confinement effect and reduced Frohlich exciton-phonon coupling in ZnO
quantum dots embedded inside a SiO2 matrix." Nanoscale, 7, 17482-17487 (2015), DOI: 10.1039/C5NR04520G.
- J.Q.
Ning, S.J. Xu, Z. Deng and Z.C. Su,"Polarized and non-polarized
photoluminescence of GaInP2 alloy with partial CuPt-type atomic
ordering: ordered domains vs. disordered regions", Journal of Materials Chemistry C, 2, 6119-6124 (2014), DOI: 10.1039/C4TC00450G
- Y.
N. Chen, S. J. Xu, C. C. Zheng, J. Q. Ning, F. C. C. Ling, W. Anwand,
G. Brauer, and W. Skorupa, "Nature of red luminescence band in
research-grade ZnO single crystals: A 'self-activated' configurational
transition", Applied Physics Letters, 105, 041912 (2014), DOI:10.1063/1.4892356
-
Z. Deng, R.X. Wang, J.Q. Ning, C.C. Zheng, S.J. Xu, Z. Xing, S.L. Lu,
J.R. Dong, B.S. Zhang, H. Yang, Super transverse diffusion of minority
carriers in GaxIn1−xP/GaAs double-junction tandem solar cells, Solar Energy, 110, 214-220 (2014), DOI:10.1016/j.solener.2014.09.017.
- C.
C. Zheng, J. Q. Ning, Z. P. Wu, J. F. Wang, D. G. Zhao, K. Xu, J. Gao,
and S. J. Xu, Effects of Fe doping on the strain and optical
properties of GaN epilayers grown on sapphire substrates, RSC Advances, 4, 55430-55434 (2014), DOI: 10.1039/C4RA12218F.
-
W.D Sheng, M.C. Sun, A.P. Zhou, and S.J. Xu, "Substrate effects on
quasiparticles and excitons in graphene nanoflakes", Applied Physics Letters 103, 143109 (2013)
- A.P. Zhou, W.D. Sheng, S.J. Xu, "Electric field driven magnetic phase transition in graphene nanoflakes", Applied Physics Letters 103, 133103 (2013)
- R.X. Wang, L. C. Yang, Y.M. Zhang, S.J. Xu, K. Fu, B.S. Zhang, J.F.
Wang, K. Xu, and H. Yang, "The effect of Ga-doped nanocrystalline ZnO
electrode on deep-ultraviolet enhanced GaN photodetector", Applied Physics Letters 102, 212104: 1-4 (2013)
- R.X. Wang, L. C. Yang, S.J. Xu, X.D. Zhang, X. Dong, Y.C.
Zhao, K. Fu, B.S. Zhang and H.Yang, "Bias-voltage dependent ultraviolet
photodectors prepared by GaOx+Zno mixture phase nanocrystalline thin film", Journal of Alloys and Compounds 566, 201-205
(2013)
- L.
C. Yang, R. X. Wang, S. J. Xu, Z. Xing, Y. M. Fan et al, "Effects of
annealing temperature on the characteristics of Ga-doped ZnO film
metal-semiconductor-metal ultraviolet photodetectors", Journal of Applied Physics 113, 084501:1-3
(2013)
- X.H. Wang and S.J. Xu, "Two-electron-satellite transition of donor bound exciton in ZnO: Radiative Auger effect", Applied Physics Letters 102, 181909: 1-4 (2013)
- Z. Deng, R.X. Wang, J.Q. Ning, C.C. Zheng, W. Bao, S.J. Xu,
X.D. Zhang, S.L. Lu, J.R. Dong, B.S. Zhang and H. Yang, "Radiative
recombination of carriers in the GaxIn1-xP/GaAs double-junction tandem solar cells", Solar Energy Materials & Solar Cells 111,
102-106
(2013)
- C. C. Zheng, S. J. Xu, F. Zhang, J. Q. Ning, D. G. Zhao, H.
Yang,
and C. M. Che, "Can interference patterns in the reflectance spectra of
GaN epilayers give important information of carrier
concentration?", Applied Physics Letters 101,
191102:1-3
(2012)
- J. Q. Ning, S. J. Xu, P. W. Wang, Y. P. Song, D. P. Yu, Y.
Y. Shan,
S. T. Lee, and H. Yang, "Microstructure and micro-Raman studies of
nitridation and structure transition of gallium oxide nanowires", Materials Characterization 73, 153-157
(2012)
- X. M. Dai, S. J. Xu, C. C. Ling, G. Brauer, W. Anwand, and
W. Skorupa, "Emission bands of nitrogen-implantation induced
luminescent
centers in ZnO crystals: Experiment and theory", Journal of Applied Physics 112, 046102:1-3
(2012)
- Y. Wen, M. Yang, S. J. Xu, L. Qin, and Z. X. Shen, "Effects
of
internal strain and external pressure on electronic structures and
optical transitions of self-assembled InxGa1-xAs/GaAs
quantum dots: An experimental and theoretical study", Journal of Applied Physics 112, 014301:1-5
(2012)
- C. C. Zheng, S. J. Xu, J. Q. Ning, Y. N. Chen, F. Zhang,
and C. M.
Che, "Temperature dependent distinct coupling and dispersions of heavy-
and light-hole excitonic polaritons in ZnO", Applied Physics Letters 100,
221105:1-4
(2012)
- C. C. Zheng, S. J. Xu, J. Q. Ning, W. Bao, J. F. Wang, J.
Gao, J. M. Liu, J. H. Zhu,
and X. L. Liu, "Residual strains and optical properties of ZnO thin
epilayers grown on r-sapphire planes", Semiconductor Science and Technology 27,
035008:1-5
(2012)
- C. C. Zheng, S. J. Xu, J. Q. Ning, Y. N. Chen, B. K. Li, J.
N. Wang,
and C. M. Che, "Formation dynamics of excitons and temporal behaviors
of Fano resonance
due to the exciton-impurity-phonon configuration interaction in ZnO", Journal of Physical Chemistry A 116,
381-385
(2012)
- X. H. Wang, J. Q. Ning, S. J. Xu, and H. W. Choi, "Raman
and
photolumisescence characterization of focused ion beam patterned
InGaN/GaN multi-quantum-wells nanopillar array", Journal of Applied Physics 110, 093111:1-6
(2011)
- C. C. Zheng, S. J. Xu, J. Q. Ning, Y. N. Chen, X. H. Lu, C.
-C. Ling,
C. M. Che, G. Y. Gao, J. H. Hao, G. Brauer, and W. Anwand,
"Ion-implantation induced nano distortion layer and its influence on
nonlinear optical properties of ZnO single crystals", Journal of Applied Physics 110, 083102:1-6
(2011)
- J. H. Zhu, J. Q. Ning, C. C. Zheng, S. J. Xu, S. M. Zhang,
and Hui Yang,
"Localized surface optical phonon mode in the InGaN/GaN
multiple-quantum-wells nanopillars: Raman spectrum and imaging", Applied Physics Letters 99, 113115:1-3
(2011)
- J. Q. Ning, S. J. Xu, X. Z. Ruan, Yang Ji, H. Z. Zheng, and
W. D. Sheng,
"Electronic band structures and electron spins of InAs/GaAs quantum
dots induced by wetting-layer fluctuation", Journal of Applied Physics 110, 054320:1-5
(2011)
- H. Yang, S. J. Xu, C. -H. Tao, V. W. W. Yam, and J. Zhang,
"A branched luminescent multinuclear platinum(II) complex", Journal of Applied Physics 110, 043105:1-4
(2011)
- S. L. Shi and S. J. Xu, "Determination of effective mass of
heavy hole from phonon-assisted excitonic luminescence spectra in ZnO", Journal of Applied Physics 109, 053510:1-4
(2011)
- S. L. Shi, S. J. Xu, Z. X. Xu, V. A. L. Roy, and C. M. Che
"Broadband second harmonic generation from ZnO nano-tetrapods", Chemical
Physics Letters 506, 226:1-4
(2011)
- C. C. Zheng, S. J. Xu, J. Q. Ning, S. F. Zhang, J.
Y.
Wang, C. M. Che and J. H. Hao, "Inner surface enhanced
femtosecond
harmonic generation in thin ZnO crystal tubes", Journal of Applied Physics 109, 013528:1-4
(2011)
- F. Zhang, S. J. Xu, J. Q. Ning, C. C. Zheng, D. G. Zhao, H.
Yang, and C. M. Che, "Optical properties of light-hole
excitons in GaN epilayers", Journal of Applied Physics 108, 116103:1-3
(2010)
- J. Q. Ning, S. J. Xu, Z. F. Wei, X. Z. Ruan, Yang Ji, H. Z.
Zheng, and H. C. Liu, "Ultrafast Kerr rotations and
zero-field dephasing time of electron spins in InAs/GaAs quantum
disks", Physics Letters A 374, 4793-4796
(2010)
- Y. J. Wang, R. X. Wang, G. Q. Li, and S. J. Xu, "Impurity
scattering induced excitonic polariton damping and its influence on the
reflectance spectra of GaN epilayers", Journal of Applied Physics 106, 013514:1-5
(2009)
- J. Q. Ning, S. J. Xu, R. X. Wang, F. Zhang, H. Q. Le, and
S. J.
Chua, "Correlated band-edge emissions of ZnO nanorods and GaN
underlying substrate", Japanese Journal of Applied Physics 48,
021102:1-4 (2009)
- M.-Y. Yuen, V. A. L. Roy, W. Lu, S. C. F. Kui, M. -H. So,
S.
S.-Y. Chui, M. Muccini, J. Q. Ning, S. J. Xu, and C. -M. Che,
"Semiconducting and electroluminescent nanowires self-assembled from
organoplatinum(II) complexes", Angew. Chem. Int. Ed. 47, 9895-9899 (2008).
- C. H. Tao, H. Yang, N. Y. Zhu, V. W. W. Yam, and S. J. Xu,
“Branched luminescent multinuclear platinum(II) alkynyl complexes:
Candidates for efficient two-photon induced luminescence”, Organometal. 27,5453-5458 (2008).
- W. D. Sheng, S. J. Xu, P. Hawrylak, “Electron g-factor
distribution in self-assembled quantum dots”, Phys. Rev. B 77, 241307-1-4 (2008).
- W. Sheng and S. J. Xu, “Optical characterization of
structure for semiconductor quantum dots”, Phys. Rev. B 77,
113305 (2008).
- M.Yang, S. J. Xu, and J. Wang, “Influence of capping layer
and atomic interdiffusion on the strain distribution in single and
double self-assembled InAs/GaAs quantum dots”, Appl. Phys.
Lett. 92, 083112-1-3 (2008).
- Bei-Ping Yan, Cecil C. C. Cheung, Steven C. F. Kui,
Hai-Feng Xiang, V. A. L. Roy, Shi-Jie Xu, and Chi-Ming Che, “Efficient
white organic light-emitting devices (WOLEDs) based on phosphorescent
platinum (II)/fluorescent dual emitting layers”, Adv. Mater. 19, 3599-3603 (2007).
- J.Q. Ning, S.J. Xu, D.P. Yu, Y.Y. Shan, and S.T. Lee, “418 cm-1 Raman scattering from gallium nitride nanowires: Is it a vibration mode
of N-rich Ga-N bond configuration?”, Appl. Phys. Lett. 91,
103117-1-3 (2007).
- Bei-Ping Yan, Cecil C. C. Cheung, Steven C. F. Kui,
Hai-Feng Xiang, V. A. L. Roy, Chi-Ming Che, and Shi-Jie Xu,
“High-efficiency orange and yellow organic light-emitting devices using
platinum(II) complexes containing extended π-conjugated cyclometalated
ligands as dopant materials”, Appl. Phys. Lett. 91, 063508-1-3 (2007).
- J. Li, S.L. Shi, Y.J. Wang, S.J. Xu, D.G. Zhao, J.J. Zhu,
H. Yang, and
F. Lu, “Violet electroluminescence of AlInGaN/InGaN multiquantum-well
light-emitting diodes: Quantum confined Stark effect and heating
effect”, IEEE Photon.
Tech. Lett. 19, 789-791 (2007).
- J.Q. Ning, S.J. Xu, S.L. Shi, and M.H. Xie, “Slow
oscillations in the low-temperature reflectance spectra of ZnO: Surface
space charge effect”, Appl. Phys. Lett. 90, 061109-1-3 (2007).
- R. X. Wang, S. J. Xu, C.D. Beling, and C.K. Cheung,
“Response to “comments on influence of indium tin oxide thin-film
quality on reverse leakage current of indium tin oxide/n-GaN Schottky
contacts””, Appl. Phys. Lett. 90, 046102-1
(2007).
- K. J. Jin and S.J. Xu, “Fano resonance in the luminescence
spectra of donor bound excitons in polar semiconductors”, Appl.
Phys. Lett. 90, 032107-1-3 (2007).
- Y. J. Wang, S. J. Xu, D. G. Zhao, J. J. Zhu, H. Yang, X. D.
Shan, and D. P. Yu, Non-exponential photoluminescence decay dynamics of
localized carriers in disordered InGaN/GaN quantum wells: the role of
localization length, Optics Express, 14:13151, 2006.
- Z. F. Wei, S. J. Xu, and Q. Li, Spontaneous emission
mechanisms of GaInAsN/GaAs quantum dot systems, Journal of
Applied Physics, 100:124311, 2006.
- H. B. Wu, S. J. Xu, and
J. Wang, Cap layer impact on electronic structures and optical
properties of InAs/GaAs self-assembled quantum dots, Physical
Review B 74:205329, 2006.
- R. X.
Wang, S. J. Xu, S. L. Shi, C. D. Beling,
S. Fung, D. G. Zhao, H. Yang, and X. M. Tao, Probing deep
level centers in GaN epilayers with variable-frequency
capacitance-voltage characteristics of Au/GaN Schottky contacts, Applied Physics Letters, 89:143505, 2006.
- Q. Li and S. J. Xu, On
luminescence of localized-state ensemble, Physics (Wu Li), 35:659,
2006. (Invited article in Chinese)
- R. X.
Wang, S. J. Xu, A. B. Djurisic, C. D. Beling, C. K.
Cheung, C. H. Cheung, S. Fung, D. G. Zhao, H. Yang, and X. M.
Tao, Influence of indium-tin-oxide thin film quality on reverse leakage
current of indium-tin-oxide/n-GaN Schottky contacts, Applied Physics Letters, 89:033503, 2006.
- Q. Li, S. J. Xu, G. Q.
Li, D. C. Dai, and C. M. Che, Two-photon photoluminescence and
excitation spectra of InGaN/GaN quantum wells, Applied Physics Letters, 89:011104,
2006..
- Y. J. Wang, S. J. Xu, and Q. Li, Anisotropic ambipolar
diffusion of carriers in InGaN/GaN quantum wells, Physica
Status Solidi (c), 3:1988,
2006.
- S. J. Xu, S. -J. Xiong,
J. Liu, and H. Z. Zheng, New type of Fano resonant tunneling via
Anderson impurities in superlattice, Europhysics Letters, 74:875,
2006.
- S. L. Shi, G. Q. Li, S.
J. Xu, Y. Zhao, and G. H. Chen, Green luminescence band in ZnO: Fine
structures, electron-phonon coupling and temperature effect. Journal
of Physical Chemistry B, 110:10475,
2006.
- H. Yang, S. J. Xu, Q. Li,
and J. Zhang, Resonantly enhanced femtosecond second-harmonic
generation and nonlinear luminescence in GaN film grown on sapphire. Applied
Physics Letters, 88:161113, 2006.
- S. J. Xu, G. Q. Li, S.
-J. Xiong, and C. M. Che, Temperature dependence of the LO phonon
sidebands in free exciton emission of GaN. Journal of Applied Physics, 99:073508,
2006.
- S. J. Xu, G. Q. Li, Y. J.
Wang, Y. Zhao, G. H. Chen, D. G. Zhao, J. J. Zhu, H. Yang, D. P. Yu,
and J. N. Wang, Quantum dissipation and broadening mechanisms due to
electron-phonon interactions in self-formed InGaN quantum dots. Applied
Physics Letters, 88:083123, 2006.
- Y. J. Wang, S. J. Xu, Q.
Li, D. G. Zhao, and H. Yang, Bandgap renormalization and carrier
localization effects in InGaN/GaN quantum-well light-emitting diodes
with Si doping layers. Applied Physics Letters, 88:041903, 2006.
- S. L. Shi, S. J. Xu, X.
J. Wang, and G. H. Chen, Theoretical absorption spectra of silicon
carbide nanocrystals. Thin Solid Film, 495:404,
2006.
- S. J. Xu, S. J. Xiong, and S. L. Shi, Resonant coupling of
bound excitons with LO phonons in ZnO: Excitonic polaron states and
Fano interference. Journal of Chemical Physics, 123:221105,
2005. (Communications)
- D. C. Dai, S. J. Xu, S. L. Shi, M. H. Xie, and C. M. Che,
Efficient multi-photon absorption induced luminescence in single
crystalline ZnO at room temperature. Optics Letters, 30:3377, 2005.
- Z. F. Wei, S. J. Xu, R. F. Duan, Q. Li, J. Wang, Y. P.
Zeng, and H. C. Liu, Thermal quenching of luminescence from buried and
surface InGaAs self-assembled quantum dots with high sheet density. Journal
of Applied Physics, 98:084305, 2005.
- Q. Li, S. J. Xu, M. H. Xie, and S. Y. Tong. A model for
steady-state luminescence of localized-state ensemble. Europhysics
Letters, 71:994–1000, 2005.
- S.-J. Xiong and S. J. Xu. Phonon coherence and new set of
sidebands in phonon-assisted photoluminescence. Europhysics
Letters, 71:459-465, 2005.
- Q. Li, S. J. Xu, M. H. Xie, and S. Y. Tong. Origin of the
'S-shaped' temperature dependence of luminescent peaks from
semiconductors. Journal of Physics - Condensed Matters, 17:4853–4858, 2005.
- K. Wang,
R. X. Wang, S. Fung, C. D. Beling,
X. D. Chen, Y. Huang, S. Li, S. J.
Xu, and M. Gong. Film thickness degradation of Au/GaN schottky
contact characteristics. Materials Science and Engineering B-Solid State
Materials for Advanced Technology, 117:21–25,
2005.
- R. X.
Wang, S. J. Xu, S. Fung, C. D. Beling,
K. Wang, S. Li, Z. F. Wei, T. J.
Zhou, J. D. Zhang, Y. Huang, and M. Gong.
Micro-Raman and photoluminescence studies of neutron-irradiated gallium
nitride epilayers. Applied Physics Letters, 87:031906,
2005.
- S. J.
Xu, G. Q. Li, S. J. Xiong, S. Y. Tong,
C. M. Che, W. Liu, and M. F. Li. Spectral
features of LO phonon sidebands in luminescence of free excitons in
GaN. Journal of Chemical Physics, 122:244712, 2005.
- S. J.
Xu, Y. J. Wang, Q. Li, X. H. Zhang,
W. Liu, and S. J. Chua. Direct observation and
theoretical interpretation of strongly enhanced lateral diffusion of
photogenerated carriers in InGaN/GaN quantum well structures. Applied Physics Letters, 86:071905,
2005.
- C. H.
Cheung, A. B. Djurisic, Y. H. Leung, Z. F.
Wei, S. J. Xu, and W. K. Chan.
Tris(8-hydroxyquinoline) aluminium nanowires: a simple synthesis
method. Chemical Physics Letters, 394:203–206,
2004.
- Y. Huang,
X. D. Chen, S. Fung, C. D. Beling,
C. C. Ling, Z. F. Wei, S. J. Xu, and
C. Y. Zhi. The depth-profiled carrier concentration and
scattering mechanism in undoped gan film grown on sapphire. Journal of Applied Physics, 96:1120–1126,
2004.
- Y. H.
Leung, A. B. Djurisic, J. Gao, M. H. Xie,
Z. F. Wei, S. J. Xu, and W. K. Chan. Zinc
oxide ribbon and comb structures: synthesis and optical properties. Chemical Physics Letters, 394:452–457,
2004.
- D. Li,
Y. H. Leung, A. B. Djurisic, Z. T. Liu,
M. H. Xie, S. L. Shi, S. J. Xu, and
W. K. Chan. Different origins of visible luminescence in ZnO
nanostructures fabricated by the chemical and evaporation methods. Applied Physics Letters, 85:1601–1603,
2004.
- G. H.
Li, F. H. Su, B. S. Ma, K. Ding,
S. J. Xu, and W. Chen. Photoluminescence of doped ZnS
nanoparticles under hydrostatic pressure. Physica Status Solidi B-Basic Research, 241:3248–3256,
2004.
- F. H.
Su, Z. L. Fang, B. S. Ma, K. Ding,
G. H. Li, and S. J. Xu. Temperature and pressure
behavior of the emission bands from Mn-, Cu-, and Eu-doped zns
nanocrystals. Journal of Applied Physics, 95:3344–3349,
2004.
- S. J. Xu,
Q. Li, J. R. Dong, and S. J. Chua.
Interpretation of anomalous temperature dependence of anti-stokes
photoluminescence at GalnP(2)/GaAs interface. Applied Physics Letters, 84:2280–2282,
2004.
- Q. Li, Z. L. Fang, S. J. Xu, G. H. Li, M. H. Xie, S. Y.
Tong, X. H. Zhang, W. Liu, and S. J. Chua. Large excitation-power
dependence of pressure coefficient of InxGa1-xN/InyGa1-yN
quantum wells. Physica Status Solidi B-Basic Research, 235:427–431, 2003.
- X. H.
Lu, P. Y. Yu, L. X. Zheng, S. J. Xu,
M. H. Xie, and S. Y. Tong. Evidence for a type-II
band alignment between cubic and hexagonal phases of GaN. Applied Physics Letters, 82:1033–1035,
2003.
- S. J.
Xu, H. J. Wang, S. H. Cheung, Q. Li,
X. Q. Dai, M. H. Xie, and S. Y. Tong.
Shallow optically active structural defect in wurtzite GaN epilayers
grown on stepped 4h-SiC substrates. Applied Physics Letters, 83:3477–3479,
2003.
- D. G.
Zhao, S. J. Xu, M. H. Xie, S. Y. Tong, and
H. Yang. Stress and its effect on optical properties of GaN
epilayers grown on Si(111), 6H-SiC(0001), and c-plane sapphire. Applied Physics Letters, 83:677–679,
2003.
- X. D.
Chen, S. Fung, C. D. Beling, Y. Huang,
Q. Li, S. J. Xu, M. Gong,
T. Henkel, H. Tanoue, and N. Kobayashi.
Photoluminescence characterization of beryllium-implanted 6H-silicon
carbide. Solid State Communications, 121:67–71,
2002.
- Q. Li,
S. J. Xu, M. H. Xie, S. Y. Tong,
X. H. Zhang, W. Liu, and S. J. Chua. Strong
screening effect of photo-generated carriers on piezoelectric field in
In0.13Ga0.87N/In0.03Ga0.97N
quantum wells. Japanese Journal of Applied Physics Part 2-Letters, 41:L1093–L1095, 2002.
- Rusli, M. B.
Yu, S. F. Yoon, S. J. Xu, K. Chew,
J. Ahn, and Q. Zhang. Deposition of hydrogenated
nanocrystalline silicon carbide by ECR-CVD. International Journal of Modern Physics B, 16:1039–1046, 2002.
- S. J. Xu,
W. Liu, and M. F. Li. Direct determination of free
exciton binding energy from phonon-assisted luminescence spectra in GaN
epilayers. Applied Physics Letters, 81:2959–2961,
2002.
- S. J.
Xu, L. X. Zheng, S. H. Cheung, M. H. Xie,
S. Y. Tong, and H. Yang. Comparative study on the
broadening of exciton luminescence linewidth due to phonon in
zinc-blende and wurtzite GaN epilayers. Applied Physics Letters, 81:4389–4391,
2002.
- S. Fung,
X. D. Chen, C. D. Beling, Y. Huang,
Q. Li, S. J. Xu, M. Gong,
T. Henkel, H. Tanoue, and N. Kobayashi.
Photoluminescence study of beryllium implantation induced intrinsic
defects in 6H-silicon carbide. Physica B-Condensed Matter, 308:710–713,
2001.
- Q. Li,
S. J. Xu, W. C. Cheng, M. H. Xie,
S. Y. Tong, C. M. Che, and H. Yang. Thermal
redistribution of localized excitons and its effect on the luminescence
band in InGaN ternary alloys. Applied Physics Letters, 79:1810–1812,
2001.
- H. Wang,
S. J. Xu, Q. Li, and S. L. Feng. X-ray
diffraction analysis on gallium-indium interdiffusion in quantum dot
superlattices. Chinese Physics Letters, 18:810–812,
2001.
- S. J.
Xu, C. T. Or, Q. Li, L. X. Zheng,
M. H. Xie, S. Y. Tong, and H. Yang. Defect
states in cubic GaN epilayer grown on GaAs by metalorganic vapor phase
epitaxy. Physica Status Solidi A-Applied Research, 188:681–685,
2001.
- L. X.
Zheng, M. H. Xie, S. J. Xu, S. H. Cheung,
and S. Y. Tong. Current-induced migration of surface adatoms
during GaN growth by molecular beam epitaxy. Journal of Crystal Growth, 227:376–380,
2001.
- S. J. Xu,
W. Liu, and M. F. Li. Effect of temperature on
longitudinal optical phonon-assisted exciton luminescence in
heteroepitaxial GaN layer. Applied Physics Letters, 77:3376–3378,
2000.
- S. J.
Xu, H. Wang, Q. Li, M. H. Xie,
X. C. Wang, W. J. Fan, and S. L. Feng. X-ray
diffraction and optical characterization of interdiffusion in
self-assembled InAs/GaAs quantum-dot superlattices. Applied Physics Letters, 77:2130–2132,
2000.
- S. J.
Xu, M. B. Yu, Rusli, S. F. Yoon, and C. M.
Che. Time-resolved photoluminescence spectra of strong visible
light-emitting SiC nanocrystalline films on Si deposited by
electron-cyclotron-resonance chemical-vapor deposition. Applied Physics Letters, 76:2550,
2000.
- M. B.
Yu, Rusli, S. F. Yoon, S. J. Xu, K. Chew,
J. Cui, J. Ahn, and Q. Zhang. Hydrogenated
nanocrystalline silicon carbide films synthesized by ECR-CVD and its
intense visible photoluminescence at room temperature. Thin Solid Films, 377:177,
2000.
- X. C. Wang, S. J. Xu, S.
J. Chua, Z. H. Zhang, W. J. Fan, C. H. Wang, J. Jiang, and X. G. Xie,
Widely tunable intersubband energy spacing of self-assembled InAs/GaAs
quantum dots due to interface intermixing. Journal of Applied Physics, 86:2687,
1999.
- G. Li, S.
J. Chua, S. J. Xu, W. Wang, P. Li, B. Beaumont, and P. Gibart, Nature
and elimination of yellow-band luminescence and donor-acceptor emission
of undoped GaN. Applied Physics Letters, 74:2821,
1999.
- Y. W.
Zhang, S. J. Xu, and C.-h. Chiu, Vertical self-alignment of quantum
dots in superlattices. Applied
Physics Letters, 74:1809, 1999.
- X. C.
Wang, S. J. Xu, S. J. Chua, K. Li, X. H. Zhang, Z. H. Zhang, K. B.
Chong, and X. Zhang, Strong influence of SiO2 thin film on properties of GaN epilayers. Applied Physics Letters, 74:818,
1999.
- G. Li, S.
J. Chua, S. J. Xu, X. C. Wang, A. S. Helmy, M-L. Ke, and J. H. Marsh,
Silica capping for AlGaAs/GaAs and InGaAs/GaAs quantum well intermixing. Applied Physics Letters, 73:3393,
1998.
- S. J. Xu,
S. J. Chua, T. Mei, X. C. Wang, X. H. Zhang, G. Karunasiri, W. J. Fan,
C. H. Wang, J. Jiang, S. Wang, and X. G. Xie, Characteristics of InGaAs
quantum dot infrared photodetector. Applied Physics Letters, 73:3153,
1998.
- W. X. Que,
Y. Zhou, Y. L. Lam, Y. C. Chan, C. H. Kam, B. Liu, L. M. Gan, C. H.
Chew, G. Q. Xu, S. J. Chua, S. J. Xu, and F. V. C. Mendis,
Photoluminescence and electroluminescence from copper doped zinc
sulphide nanocrystals/polymer composite. Applied Physics Letters, 73:2727,
1998.
- S. J.
Chua, S. J. Xu, X. H. Zhang, X. C. Wang, T. Mei, W. J. Fan, C. H. Wang,
J. Jiang, and X. G. Xie, Polarization dependence of intraband
absorption in self-organized quantum dots. Applied Physics Letters, 73:1997,
1998.
- S. J. Xu,
S. J. Chua, B. Liu, L. M. Gan, C. H. Chew, and G. Q. Xu, Luminescence
characteristics of impurities-activated ZnS nanocrystals prepared in
microemulsion with hydrothermal treatment. Applied Physics Letters, 73:478,
1998.
- X. H.
Zhang, S. J. Chua, S. J. Xu, and W. J. Fan, Band offsets at the
InAlGaAs/InAlAs (001) heterostructures lattice matched to an InP
substrate. Journal of Applied Physics, 83:5852,
1998.
- S. J. Xu, X. C. Wang, S. J. Chua, C. H. Wang, W. J.
Fan, J. Jiang, and X.G. Xie, Effects of rapid thermal annealing on
structure and luminescence of self-assembled InAs/GaAs quantum dots. Applied
Physics Letters, 72:3335, 1998.
- S. J. Xu,
G. Li, S. J. Chua, X. C. Wang, and W. Wang, Observation of
optically-active metastable defects in undoped GaN epilayers. Applied Physics Letters, 72:2451,
1998.
- W. Liu, M.
F. Li, S. J. Xu, K. Uchida, and K. Matsumoto, Phonon-assisted
photoluminescence in wurtzite GaN epilayer. Semiconductor
Science and Technology, 13:769, 1998.
- S. Bastola, S. J. Chua,
and S. J. Xu, Blueshift of effective band gap in n-i-p-i doping
superlattices as a function of optical excitation intensity. Journal of Applied
Physics, 83:1476, 1998.
- X. H. Zhang, S. J. Chua, S. J. Xu, and W. J.
Fan, First-principles calculations
of GaAs1-xPx-Al0.3Ga0.7As(001)
band offsets. Journal of Physics - Condensed
Matters, 10:577, 1998.
- A. Y. Du,
M. F. Li, T. C. Chong, S. J. Xu, Z. Zhang, and D. P. Yu, Investigation
of dislocations and traps in MBE grown p-InGaAs/GaAs heterostructures. Thin Solid Films, 311:7,
1997.
- L. M. Gan, B. Liu, C. H.
Chew, S. J. Xu, S. J. Chua, G. L. Loy, and G. Q. Xu, Enhanced
photoluminescence and characterization of Mn-doped ZnS nanocrystallites
synthesized in microemulsion. Langmuir, 13:6427,
1997.
- J. Liu, E.
Gornik, S. J. Xu, and H. Z. Zheng, Sequential resonant tunnelling
through Landau levels in GaAs/AlAs superlattices. Semiconductor Science and Technology, 12:1422,
1997.
- X. Zhang,
S. J. Chua, S. J. Xu, K. B. Chong, and K. Onabe, Optical property of a
novel (111)-oriented quantum structure. Applied
Physics Letters, 71:1840, 1997.
- S. J. Xu,
S. J. Chua, X. Zhang, Z. H. Zhang, C. P. Luo, Z. L. Yuan, Z. Y. Xu, and
J. M. Zhou, Optical characterization of InAs monolayer quantum
structures grown on (311)A, (311)B, and (100)GaAs substrates. IEEE
Journal of Selected Topics on Quantum Electronics, 3:471, 1997.
- S. J.
Chua, X. H. Zhang, S. J. Xu, and X. Gu, First-principles calculations
of band offsets of AlxGa1-xP-GaP(001)
heterostructures. Journal of Physics - Condensed
Matters, 9:L279,
1997.
- S. J. Xu,
S. J. Chua, X. H. Tang, and X. H. Zhang, Strong interaction of
Fermi-edge singularity and exciton related to N=2 subband in a
modulation-doped AlGaAs/InGaAs/GaAs quantum well. Physical Review B, 54:17701, 1996.
- K. J. Luo,
H. Z. Zheng, S. J. Xu, X. P. Yang, P. H. Zhang, W. Zhang, and C. F. Li,
Perpendicular-electric-field dependence of exciton binding energy
studied by continuous-wave photoluminescence. Physical Review B, 53:16453,
1996.
- S. J.
Chua, S. J. Xu, and X. H. Tang, AlGaAs optical phonon replicas in the
photoluminescence spectra of GaAs layer in an Al0.3Ga0.7As/GaAs
heterostructure. Solid State Communications, 98:1053,
1996.
- S. J. Xu,
J. Liu, H. Z. Zheng, S. J. Chua, Y. X. Li, W. C. Cheng, P. H. Zhang,
and X. P. Yang, Temperature dependence of the low-field mobility of a
very narrow miniband in the degenerate case. Physics Letter A, 212:97,
1996.
- K. J. Luo,
H. Z. Zheng, S. J. Xu, P. H. Zhang, W. Zhang, and X. P. Yang, Direct
observation for the reduction of exciton binding-energy induced by
perpendicular electric-field. Applied Physics Letters, 67:2642,
1995.
- S. J. Xu,
D. S. Jiang, G. H. Li, Y. H. Zhang, and J. S. Luo, Anticrossing due to
resonant coupling of hole levels in asymmetric coupled-quantum-wells. Chinese Physics Letters, 10:433, 1993.
- S. J. Xu,
D. S. Jiang, G. H. Li, and J. S. Luo, Carrier nonresonant tunneling in
asymmetric coupled double quantum-wells. Superlattices and Microstructures, 12:231,
1992.
Coming soon.