Publication

 

[ Book Chapters | Invited Talks | Journal Papers | Presentations ]


Book Chapters

 

Invited Talks & Lectures

 

  1. S.J. Xu, "Evolution of Surface Morphology, Stress and Defect States with Thickness of GaN Films Directly Grown on Flat 6H-SiC", VASSII, Hong Kong, Aug. 2002.
  2. S.J. Xu, "Ultrafast Coherent Dynamics of Carriers in GaN", ISUPTW2004, Shanghai, May 2004.
  3. S.J. Xu, "Exciton-LO Phonon Interaction and Fano-type Quantum Interference in Luminescent Spectra of GaN", ICOSFM2004, Beijing, Aug. 2004.
  4. S.J. Xu, "Fano Resonance in Phonon-Assisted Photoluminescence Spectra of Widegap Polar Semiconductors", the 20th Congress of the International Commission for Optics (ICO20), Changchun, Aug. 2005.
  5. S.J. Xu, "On the Luminescence of Localized-State Ensemble", CPS-2005, Wuhan, Sept. 2005.
  6. S.J. Xu, “Two-Photon Absorption Induced Luminescence and Carrier Dynamics in InGaN/GaN Quantum Well Structures”, invited Talk in the HKU-ICCAS Workshop on Molecular Functional Materials, Hong Kong, Dec. 2005.
  7. S.J. Xu, “Fs-multi-photon-excited fluorescence and carrier dynamics in ZnO”, invited talk in the 4th Asia Conference on Ultrafast Phenomena, Hong Kong, Jan. 8-11, 2006.
  8. S.J. Xu, “New Type of Fano Resonance in Electron Tunneling through a Doped Superlattice”, invited talk in the Annual Meeting of Chinese Physics Society, Beijing, Sept. 2006.
  9. S.J. Xu, “Luminescence imaging and blinking behavior of individual InGaN nanoclusters formed in GaN matrix”, invited Talk in the 6th Asia-Pacific Conference on Near-Field Optics (APNFO6), Yellow Mountain, June 13-17, 2007.
  10. S.J. Xu, “Two-photon photoluminescence of InGaN/GaN multiple quantum wells”, invited Talk in the International Conference on Materials for Advanced Technologies 2007 (ICMAT2007), Singapore, July 1-6, 2007.
  11. S.J. Xu, “Controllable Excitation and Ultrafast Phenomena of Spinning Carriers in Ultrafine Quantum Layered Structures”, plenary talk in the 7th National Conference of Molecular Beam Epitaxy, Nanchang, Oct. 20-23, 2007.
  12. S.J. Xu, “Ultrafast Spin Dynamics of Photoexcited Carriers in Periodic InGaAs/GaAs Ultrathin Quantum Structures”, invited Talk in the 5th Asian Conference on Ultrafast Phenomena, Singapore, Jan. 6-9, 2008.
  13. S.J. Xu, “Exciton-biexciton Dynamics in InGaAs Quantum Wells Studied by Time-resolved Faraday Rotation Spectroscopy”, invited Talk in the 23rd Progress in Electromagnetics Research Symposium, Hangzhou, Mar. 24-28, 2008.
  14. S.J. Xu, “Controlled Optical Injections and Initial Coherent Dynamics of Electron Spins in Semiconductor Quantum Disks”, invited talk in the 6th Asian Conference on Ultrafast Phenomena, Taipei, Jan. 11-13, 2010.
  15. S.J. Xu, “Luminescence imaging and blinking behavior of individual InGaN nanoclusters formed in GaN matrix”, invited talk in the 28th Progress in Electromagnetics Research Symposium, Boston, MA, USA, July 5-8, 2010.
  16. S.J. Xu, “New surface optical phonon mode and Raman imaging in InGaN/GaN MQW nanopillars”, invited talk in the 8th Cross-Strait Workshop on Nano Science & Technology, Hong Kong, Dec. 20-22, 2010.
  17. S.J. Xu, et al., “Enhanced Femtosecond Second Harmonic Generation in Thin ZnO Crystal Hollow Rods”, invited talk in the OSA-IEEE-COS Topical Meeting on Advances In Optoelectronics & Micro/Nano-Optics, Guangzhou, Dec. 3-6, 2010.
  18. S.J. Xu, “Exciton-Phonon-Impurity Interactions and Optical Properties in ZnO”, invited talk in the 18th Semiconductor Physics Conference, Huhehot, Aug. 20-26, 2011.
  19. S.J. Xu, “Raman enhancement effect in self-assembled Si nanoclusters grown on SiC”, invited talk in 2nd International Conference on Frontiers of Plasmonics (FOP2), Chengdu, Apr. 8-12, 2012.
  20. S.J. Xu, “Influence of Internal Strain and External Pressure on Electronic States and Optical Transitions in Self-assembled InxGa1-xAs /GaAs Quantum Dots”, invited talk in the 9th Cross Strait Workshop on Nano Science and Technology, Tainan, Taiwan, Apr. 22-25, 2012.
  21. S.J. Xu, “Exciton formation dynamics and temporal behavior of many-body Fano resonance in ZnO”, invited talk in West Photonics 2013, Xi’an, Oct. 18-19, 2013.
  22. S.J. Xu, “Polarized Photoluminescence and Carrier Localization of GaInP2 Alloy with Partial CuPt-type Atomic Ordering”, invited talk in THE 17TH ANNUAL CONFERENCE OF THE PHYSICAL SOCIETY OF HONG KONG, Hong Kong, June 7, 2014.
  23. S.J. Xu, “Carrier Localization and Polarized Photoluminescence of GaInP2 Alloy with Spontaneous Atomic Ordering”, invited talk in the 4th Advances in Optoelectronics and Micro/nano-optics, Xi’an, Sept. 17-20, 2014.
  24. S.J. Xu, “Carrier Diffusion and Mid-Way Recombination in GaInP2/GaAs Multijunction Photovoltaic Devices”, invited talk in the Asia Communications and Photonics Conference, Shanghai, Nov. 11-14, 2014.

 

    In addition, Dr. Xu gave a number of invited lectures in following universities and institutions:

    The Hong Kong University of Science and Technology; The Hong Kong Polytechnic University; Nanjing University; Zhejiang University; Zhongshan University; National Taiwan University; Nanyang Technological University, Singapore; Institute of Physics, Beijing; Institute of Semiconductors, Beijing; Shanghai Institute of Microsystems and Information Technology; Suzhou Institute of Nano-tech and Nano-bionics; Hebei Semiconductor Institute; Xidian University; Xi'an Jiaotong University; Soochow University; Nanjing Institute of Solid State Electronics; South University of Science and Technology of China; Shenzhen University; Tsinghua University; Peking University at Shenzhen.

     


Journal Papers

[2019|2018 |2017 |2016 |2015 |2014 |2013 |2012 |2011 |2010 |2009 |2008 |20072006 | 2005 | 2004 | 2003 | 2002 | 2001 | 2000 | 1999| 1998| before 1998 ]


 

 

    2019

     

  1. Su Z, Xu S, Effective lifetimes of minority carriers in time-resolved photocurrent and photoluminescence of a doped semiconductor: Modelling of a GaInP solar cell. Solar Energy Materials and Solar Cells. 193 (2019)292-297. DOI: 10.1016/j.solmat.2019.01.029

 

    2018

     

  1. Su Z, Xu S, Wang X, Ning J, Wang R, Lu S, Dong J, Yang H. Effective Photon Recycling and Super Long Lived Minority Carriers in GaInP/GaAs Heterostructure Solar Cell: A Time-Resolved Optical Study. IEEE Journal of Photovoltaics (2018). DOI: 10.1109/JPHOTOV.2018.2804337
  2. Lao X, Yang Z, Su Z, Wang Z, Ye H, Wang M, Yao X, Xu S. Luminescence and thermal behaviors of free and trapped excitons in cesium lead halide perovskite nanosheets.  Nanoscale.  2018;10(21):9949-56. DOI: 10.1039/C8NR01109E
  3. Wang X, Ye H, Su Z, Yu D, Xu S. Observation of two-times self-focusing of femtosecond laser beam in ZnO crystal by two-photon luminescence.   Science Bulletin.  2018 Nov 15;63(21):1392-6.DOI: 10.1016/j.scib.2018.10.004
  4. Tang F, Su Z, Ye H, Gao W, Pan X, Xu S. Large Negative-Thermal-Quenching Effect in Phonon-Induced Light Emissions in Mn4+-Activated Fluoride Phosphor for Warm-White Light-Emitting Diodes.   ACS Omega.  2018 Oct 19;3(10):13704-10.DOI:10.1021/acsomega.8b01127
  5. Ye H, Su Z, Tang F, Bao Y, Lao X, Chen G, Wang J, Xu S. Probing defects in ZnO by persistent phosphorescence.  Opto-Electronic Advances.  2018 Jul 24;1(06):180011.DOI:10.29026/oea.2018.180011

2017

 

  1. Zhicheng Su, and Shijie Xu. "A generalized model for time-resolved luminescence of localized carriers and applications: Dispersive thermodynamics of localized carriers." Scientific Reports 7 (2017):13. DOI: 10.1038/s41598-017-00065-3.
  2. Honggang Ye, Zhicheng Su, Fei Tang, Mingzheng Wang, Guangde Chen, Jian Wang, and Shijie Xu. "Excitation Dependent Phosphorous Property and New Model of the Structured Green Luminescence in ZnO." Scientific Reports 7 (2017): 41460. DOI: 10.1038/srep41460.
  3. Z.C Su, C.C. Zheng, G. Cheng. C-M.Che and S.J. Xu, "Triplet harvesting in luminescent Cu(I) complexes by the thermally activated luminescence transition mechanism: impact of the molecular structure." Journal of Materials Chemistry C. (2017):5,4488-4494. DOI:10.1039/C7TC00773F
  4. Z.C. Su, S. J. Xu, R. X. Wang, J. Q. Ning, J. R. Dong, S. L. Lu, and H. Yang. "Electroluminescence probe of internal processes of carriers in GaInP single junction solar cell." Solar Energy Materials and Solar Cells 168 (2017): 201-206. DOI:10.1016/j.solmat.2017.04.041
  5. Su, Z. C.*; Ye, H. G.*; Xiong, Z.; Tang, F.; Lou, Q.; Tang, J. Y.; Dai, J. Y.; Shan, C. X.; Xu, S. J. Understanding and Manipulating Luminescence in Carbon Nanodots. Carbon 2017. (*equal contribution)
    DOI:10.1016/j.carbon.2017.10.013
  6. Su, Z. C.; Wang, Z. L.; Yu, J. D.; Yi, Y.; Wang, M. Z.; Wang, L.; Luo, Y.; Wang, J. N.; Xu, S. J. Managing Green Emission in Coupled InGaN QW-QDs Nanostructures via Nanoengineering. J. Phys. Chem. C 2017.
    DOI:10.1021/acs.jpcc.7b07826

  7. Ye H, Su ZC, Tang F, Chen G, Wang J, Xu K, Xu SJ. Role of free electrons in phosphorescence in n-type wide bandgap semiconductors. Physical Chemistry Chemical Physics. 2017. DOI:10.1039/C7CP05796B
  8. Ye H, Su Z, Tang F, Zheng C, Chen G, Wang J, Xu S. Extinction of the zero-phonon line and the first-order phonon sideband in excitonic luminescence of ZnO at room temperature: the self-absorption effect. Science Bulletin. 2017 Nov 30;62(22):1525-9 DOI:10.1016/j.scib.2017.10.015
  9. Tang F, Su ZC, Ye H, Xu SJ, Wang G, Cao Y, Gao W, Pan X. Boosting up phonon-induced luminescence in red fluoride phosphors via composition variation driven structural transformations. Journal of Materials Chemistry C. 2017. DOI:10.1039/C7TC04695B
  10. Tang, Fei, Honggang Ye, Zhicheng Su, Yitian Bao, Wang Guo, and Shijie Xu. "Luminescence Anisotropy and Thermal Effect of Magnetic and Electric Dipole Transitions of Cr3+ Ions in Yb: YAG Transparent Ceramic." ACS applied materials & interfaces 9, no. 50 (2017): 43790-43798.
  11.  

    2016

     

  12. Y. N. Chen, C. C. Zheng, J. Q. Ning, R. X. Wang, C. C. Ling, and S. J. Xu. "Who make transparent ZnO colorful?–Ion implantation and thermal annealing effects." Superlattices and Microstructures 99 (2016): 208-213. DOI:10.1016/j.spmi.2016.02.022.
  13. Z. C. Su, J. Q. Ning, Z. Deng, X. H. Wang, S. J. Xu, R. X. Wang, S. L. Lu, J. R. Dong, and H. Yang. "Transition of radiative recombination channels from delocalized states to localized states in a GaInP alloy with partial atomic ordering: a direct optical signature of Mott transition?." Nanoscale 8, 13 (2016): 7113-7118. DOI: 10.1039/C5NR07252B.
  14. X. H. Wang, J. Q. Ning, Z. C. Su, C. C. Zheng, B. R. Zhu, L. Xie, H. S. Wu, and S. J. Xu. "Photoinduced doping and photoluminescence signature in an exfoliated WS 2 monolayer semiconductor." RSC Advances  6 (2016): 27677-27681, DOI: 10.1039/C6RA01836J.
  15. Zhuo Deng, Jiqiang Ning, Rongxin Wang, Zhicheng Su, Shijie Xu, Zheng Xing, Shulong Lu, Jianrong Dong, and Hui Yang. "Influence of temperature and reverse bias on photocurrent spectrum and supra-bandgap spectral response of monolithic GaInP/GaAs double-junction solar cell." Frontiers of Optoelectronics 9, 2 (2016): 306-311. DOI: 10.1007/s12200-016-0599-y.
  16. M. Z. Wang, and S. J. Xu. "Band-edge optical transitions in a nonpolar-plane GaN substrate: exciton–phonon coupling and temperature effects." Semiconductor Science and Technology 31, 9 (2016): 095004. DOI:10.1088/0268-1242/31/9/095004.
  17. Wei Bao, Zhicheng Su, Changcheng Zheng, Jiqiang Ning, and Shijie Xu. "Carrier Localization Effects in InGaN/GaN Multiple-Quantum-Wells LED Nanowires: Luminescence Quantum Efficiency Improvement and “Negative” Thermal Activation Energy." Scientific Reports 6 (2016), DOI:10.1038/srep34545.
  18. Fei Tang, Zhicheng Su, Honggang Ye, Mingzheng Wang, Xin Lan, David Lee Phillips, Yongge Cao, and Shijie Xu. "A set of manganese ion activated fluoride phosphors (A 2 BF 6: Mn 4+, A= K, Na, B= Si, Ge, Ti): synthesis below 0° C and efficient room-temperature photoluminescence." Journal of Materials Chemistry C (2016), DOI:10.1039/C6TC02737G.
  19. X. H. Wang, Z. C. Su, J. Q. Ning, M. Z. Wang, S. J. Xu, S. Han, F. Jia, D. L. Zhu, and Y. M. Lu. “Influence of Lattice Vibrations on Luminescence and Transfer of Excitons in WS 2 Monolayer Semiconductors.” Journal of Physics D: Applied Physics 49, 46 (2016): 465101. DOI:10.1088/0022-3727/49/46/465101.
  20.  

    2015

     

  21. Zhuo Deng, Jiqiang Ning, Zhicheng Su, Shijie Xu, Zheng Xing, Rongxin Wang, Shulong Lu, Jianrong Dong, Baoshun Zhang, and Hui Yang. "Structural dependences of localization and recombination of photogenerated carriers in the top GaInP subcells of GaInP/GaAs double-junction tandem solar cells." ACS applied materials & interfaces, 7, 690-695 (2015), DOI: 10.1021/am506976n.
  22. Jun Wang, Changcheng Zheng, Jiqiang Ning, Lixia Zhang, Wei Li, Zhenhua Ni, Yan Chen, Jiannong Wang, and Shijie Xu, "Luminescence signature of free exciton dissociation and liberated electron transfer across the junction of graphene/GaN hybrid structure", Scientific Reports, 5, 7687 (2015), DOI: 10.1038/srep07687.
  23. Wang, X. H., J. Q. Ning, C. C. Zheng, B. R. Zhu, L. Xie, H. S. Wu, and S. J. Xu. "Photoluminescence and Raman mapping characterization of WS 2 monolayers prepared using top-down and bottom-up methods." Journal of Materials Chemistry C, 3, 2589-2592 (2015), DOI: 10.1039/c5tc00016e.
  24. Li Yue, Peng Wang, Kai Wang, Xiaoyan Wu, Wenwu Pan, Yaoyao Li, Yuxin Song, Yi Gu, Qian Gong, Shumin Wang, Jiqiang Ning and Shijie Xu. "Novel InGaPBi single crystal grown by molecular beam epitaxy."Applied Physics Express, 8, 041201 (2015), DOI:10.7567/APEX.8.041201.
  25. Ning, J. Q., C. C. Zheng, L. X. Zheng, and S. J. Xu. “Beyond Spatial Correlation Effect in Micro-Raman Light Scattering: An Example of Zinc-Blende GaN/GaAs Hetero-Interface.” Journal of Applied Physics, 118, 073101 (2015), DOI:10.1063/1.4928618.
  26. Ning, J. Q., Zheng, C. C., Zhang, X. H., Xu, S. J., "Strong quantum confinement effect and reduced Frohlich exciton-phonon coupling in ZnO quantum dots embedded inside a SiO2 matrix." Nanoscale, 7, 17482-17487 (2015), DOI: 10.1039/C5NR04520G.

     

    2014

  27. J.Q. Ning, S.J. Xu, Z. Deng and Z.C. Su,"Polarized and non-polarized photoluminescence of GaInP2 alloy with partial CuPt-type atomic ordering: ordered domains vs. disordered regions", Journal of Materials Chemistry C, 2, 6119-6124 (2014), DOI: 10.1039/C4TC00450G
  28. Y. N. Chen, S. J. Xu, C. C. Zheng, J. Q. Ning, F. C. C. Ling, W. Anwand, G. Brauer, and W. Skorupa, "Nature of red luminescence band in research-grade ZnO single crystals: A 'self-activated' configurational transition", Applied Physics Letters, 105, 041912 (2014), DOI:10.1063/1.4892356
  29. Z. Deng, R.X. Wang, J.Q. Ning, C.C. Zheng, S.J. Xu, Z. Xing, S.L. Lu, J.R. Dong, B.S. Zhang, H. Yang, Super transverse diffusion of minority carriers in GaxIn1−xP/GaAs double-junction tandem solar cells, Solar Energy, 110, 214-220 (2014), DOI:10.1016/j.solener.2014.09.017.
  30. C. C. Zheng, J. Q. Ning, Z. P. Wu, J. F. Wang, D. G. Zhao, K. Xu, J. Gao, and S. J. Xu,  Effects of Fe doping on the strain and optical properties of GaN epilayers grown on sapphire substrates, RSC Advances, 4, 55430-55434 (2014), DOI: 10.1039/C4RA12218F.
  31. 2013

  32. W.D Sheng, M.C. Sun, A.P. Zhou, and S.J. Xu, "Substrate effects on quasiparticles and excitons in graphene nanoflakes", Applied Physics Letters 103, 143109 (2013)
  33. A.P. Zhou, W.D. Sheng, S.J. Xu, "Electric field driven magnetic phase transition in graphene nanoflakes", Applied Physics Letters 103, 133103 (2013)
  34. R.X. Wang, L. C. Yang, Y.M. Zhang, S.J. Xu, K. Fu, B.S. Zhang, J.F. Wang, K. Xu, and H. Yang, "The effect of Ga-doped nanocrystalline ZnO electrode on deep-ultraviolet enhanced GaN photodetector", Applied Physics Letters 102, 212104: 1-4 (2013)
  35. R.X. Wang, L. C. Yang, S.J. Xu, X.D. Zhang,  X. Dong, Y.C. Zhao, K. Fu, B.S. Zhang and H.Yang, "Bias-voltage dependent ultraviolet photodectors prepared by GaOx+Zno mixture phase nanocrystalline thin film", Journal of Alloys and Compounds 566, 201-205 (2013)
  36. L. C. Yang, R. X. Wang, S. J. Xu, Z. Xing, Y. M. Fan et al, "Effects of annealing temperature on the characteristics of Ga-doped ZnO film metal-semiconductor-metal ultraviolet photodetectors", Journal of Applied Physics 113, 084501:1-3 (2013)
  37. X.H. Wang and S.J. Xu, "Two-electron-satellite transition of donor bound exciton in ZnO: Radiative Auger effect", Applied Physics Letters 102, 181909: 1-4 (2013)
  38. Z. Deng, R.X. Wang, J.Q. Ning, C.C. Zheng, W. Bao, S.J. Xu, X.D. Zhang, S.L. Lu, J.R. Dong, B.S. Zhang and H. Yang, "Radiative recombination of carriers in the GaxIn1-xP/GaAs double-junction tandem solar cells", Solar Energy Materials & Solar Cells 111, 102-106 (2013)
  39. 2012

  40. C. C. Zheng, S. J. Xu, F. Zhang, J. Q. Ning, D. G. Zhao, H. Yang, and C. M. Che, "Can interference patterns in the reflectance spectra of GaN epilayers give important information of carrier concentration?", Applied Physics Letters 101, 191102:1-3 (2012)
  41. J. Q. Ning, S. J. Xu, P. W. Wang, Y. P. Song, D. P. Yu, Y. Y. Shan, S. T. Lee, and H. Yang, "Microstructure and micro-Raman studies of nitridation and structure transition of gallium oxide nanowires", Materials Characterization 73, 153-157 (2012)
  42. X. M. Dai, S. J. Xu, C. C. Ling, G. Brauer, W. Anwand, and W. Skorupa, "Emission bands of nitrogen-implantation induced luminescent centers in ZnO crystals: Experiment and theory", Journal of Applied Physics 112, 046102:1-3 (2012)
  43. Y. Wen, M. Yang, S. J. Xu, L. Qin, and Z. X. Shen, "Effects of internal strain and external pressure on electronic structures and optical transitions of self-assembled InxGa1-xAs/GaAs quantum dots: An experimental and theoretical study", Journal of Applied Physics 112, 014301:1-5 (2012)
  44. C. C. Zheng, S. J. Xu, J. Q. Ning, Y. N. Chen, F. Zhang, and C. M. Che, "Temperature dependent distinct coupling and dispersions of heavy- and light-hole excitonic polaritons in ZnO", Applied Physics Letters 100, 221105:1-4 (2012)
  45. C. C. Zheng, S. J. Xu, J. Q. Ning, W. Bao, J. F. Wang, J. Gao, J. M. Liu, J. H. Zhu, and X. L. Liu, "Residual strains and optical properties of ZnO thin epilayers grown on r-sapphire planes", Semiconductor Science and Technology 27, 035008:1-5 (2012)
  46. C. C. Zheng, S. J. Xu, J. Q. Ning, Y. N. Chen, B. K. Li, J. N. Wang, and C. M. Che, "Formation dynamics of excitons and temporal behaviors of Fano resonance due to the exciton-impurity-phonon configuration interaction in ZnO", Journal of Physical Chemistry A 116, 381-385 (2012)
  47. 2011

  48. X. H. Wang, J. Q. Ning, S. J. Xu, and H. W. Choi, "Raman and photolumisescence characterization of focused ion beam patterned InGaN/GaN multi-quantum-wells nanopillar array", Journal of Applied Physics 110, 093111:1-6 (2011)
  49. C. C. Zheng, S. J. Xu, J. Q. Ning, Y. N. Chen, X. H. Lu, C. -C. Ling, C. M. Che, G. Y. Gao, J. H. Hao, G. Brauer, and W. Anwand, "Ion-implantation induced nano distortion layer and its influence on nonlinear optical properties of ZnO single crystals", Journal of Applied Physics 110, 083102:1-6 (2011)
  50. J. H. Zhu, J. Q. Ning, C. C. Zheng, S. J. Xu, S. M. Zhang, and Hui Yang, "Localized surface optical phonon mode in the InGaN/GaN multiple-quantum-wells nanopillars: Raman spectrum and imaging", Applied Physics Letters 99, 113115:1-3 (2011)
  51. J. Q. Ning, S. J. Xu, X. Z. Ruan, Yang Ji, H. Z. Zheng, and W. D. Sheng, "Electronic band structures and electron spins of InAs/GaAs quantum dots induced by wetting-layer fluctuation", Journal of Applied Physics 110, 054320:1-5 (2011)
  52. H. Yang, S. J. Xu, C. -H. Tao, V. W. W. Yam, and J. Zhang, "A branched luminescent multinuclear platinum(II) complex", Journal of Applied Physics 110, 043105:1-4 (2011)
  53. S. L. Shi and S. J. Xu, "Determination of effective mass of heavy hole from phonon-assisted excitonic luminescence spectra in ZnO", Journal of Applied Physics 109, 053510:1-4 (2011)
  54. S. L. Shi, S. J. Xu, Z. X. Xu, V. A. L. Roy, and C. M. Che "Broadband second harmonic generation from ZnO nano-tetrapods", Chemical Physics Letters 506, 226:1-4 (2011)
  55. C. C. Zheng, S. J. Xu, J. Q. Ning, S. F. Zhang, J. Y. Wang, C. M. Che and J. H. Hao, "Inner surface enhanced femtosecond harmonic generation in thin ZnO crystal tubes", Journal of Applied Physics 109, 013528:1-4 (2011)
  56. 2010

  57. F. Zhang, S. J. Xu, J. Q. Ning, C. C. Zheng, D. G. Zhao, H. Yang, and C. M. Che, "Optical properties of light-hole excitons in GaN epilayers", Journal of Applied Physics 108, 116103:1-3 (2010)
  58. J. Q. Ning, S. J. Xu, Z. F. Wei, X. Z. Ruan, Yang Ji, H. Z. Zheng, and H. C. Liu, "Ultrafast Kerr rotations and zero-field dephasing time of electron spins in InAs/GaAs quantum disks", Physics Letters A 374, 4793-4796 (2010)
  59. 2009

  60. Y. J. Wang, R. X. Wang, G. Q. Li, and S. J. Xu, "Impurity scattering induced excitonic polariton damping and its influence on the reflectance spectra of GaN epilayers", Journal of Applied Physics 106, 013514:1-5 (2009)
  61. J. Q. Ning, S. J. Xu, R. X. Wang, F. Zhang, H. Q. Le, and S. J. Chua, "Correlated band-edge emissions of ZnO nanorods and GaN underlying substrate", Japanese Journal of Applied Physics 48, 021102:1-4 (2009)
  62. 2008

  63. M.-Y. Yuen, V. A. L. Roy, W. Lu, S. C. F. Kui, M. -H. So, S. S.-Y. Chui, M. Muccini, J. Q. Ning, S. J. Xu, and C. -M. Che, "Semiconducting and electroluminescent nanowires self-assembled from organoplatinum(II) complexes", Angew. Chem. Int. Ed. 47, 9895-9899 (2008).
  64. C. H. Tao, H. Yang, N. Y. Zhu, V. W. W. Yam, and S. J. Xu, “Branched luminescent multinuclear platinum(II) alkynyl complexes: Candidates for efficient two-photon induced luminescence”, Organometal. 27,5453-5458 (2008).
  65. W. D. Sheng, S. J. Xu, P. Hawrylak, “Electron g-factor distribution in self-assembled quantum dots”, Phys. Rev. B 77, 241307-1-4 (2008).
  66. W. Sheng and S. J. Xu, “Optical characterization of structure for semiconductor quantum dots”, Phys. Rev. B 77, 113305 (2008).
  67. M.Yang, S. J. Xu, and J. Wang, “Influence of capping layer and atomic interdiffusion on the strain distribution in single and double self-assembled InAs/GaAs quantum dots”, Appl. Phys. Lett. 92, 083112-1-3 (2008).
  68. 2007

  69. Bei-Ping Yan, Cecil C. C. Cheung, Steven C. F. Kui, Hai-Feng Xiang, V. A. L. Roy, Shi-Jie Xu, and Chi-Ming Che, “Efficient white organic light-emitting devices (WOLEDs) based on phosphorescent platinum (II)/fluorescent dual emitting layers”, Adv. Mater. 19, 3599-3603 (2007).
  70. J.Q. Ning, S.J. Xu, D.P. Yu, Y.Y. Shan, and S.T. Lee, “418 cm-1 Raman scattering from gallium nitride nanowires: Is it a vibration mode of N-rich Ga-N bond configuration?”, Appl. Phys. Lett. 91, 103117-1-3 (2007).
  71. Bei-Ping Yan, Cecil C. C. Cheung, Steven C. F. Kui, Hai-Feng Xiang, V. A. L. Roy, Chi-Ming Che, and Shi-Jie Xu, “High-efficiency orange and yellow organic light-emitting devices using platinum(II) complexes containing extended π-conjugated cyclometalated ligands as dopant materials”, Appl. Phys. Lett. 91, 063508-1-3 (2007).
  72. J. Li, S.L. Shi, Y.J. Wang, S.J. Xu, D.G. Zhao, J.J. Zhu, H. Yang, and F. Lu, “Violet electroluminescence of AlInGaN/InGaN multiquantum-well light-emitting diodes: Quantum confined Stark effect and heating effect”, IEEE Photon. Tech. Lett. 19, 789-791 (2007).
  73. J.Q. Ning, S.J. Xu, S.L. Shi, and M.H. Xie, “Slow oscillations in the low-temperature reflectance spectra of ZnO: Surface space charge effect”, Appl. Phys. Lett. 90, 061109-1-3 (2007).
  74. R. X. Wang, S. J. Xu, C.D. Beling, and C.K. Cheung, “Response to “comments on influence of indium tin oxide thin-film quality on reverse leakage current of indium tin oxide/n-GaN Schottky contacts””, Appl. Phys. Lett. 90, 046102-1 (2007).
  75. K. J. Jin and S.J. Xu, “Fano resonance in the luminescence spectra of donor bound excitons in polar semiconductors”, Appl. Phys. Lett. 90, 032107-1-3 (2007).
  76. 2006

  77. Y. J. Wang, S. J. Xu, D. G. Zhao, J. J. Zhu, H. Yang, X. D. Shan, and D. P. Yu, Non-exponential photoluminescence decay dynamics of localized carriers in disordered InGaN/GaN quantum wells: the role of localization length, Optics Express, 14:13151, 2006.
  78. Z. F. Wei, S. J. Xu, and Q. Li, Spontaneous emission mechanisms of GaInAsN/GaAs quantum dot systems, Journal of Applied Physics, 100:124311, 2006.
  79. H. B. Wu, S. J. Xu, and J. Wang, Cap layer impact on electronic structures and optical properties of InAs/GaAs self-assembled quantum dots, Physical Review B 74:205329, 2006.
  80. R. X. Wang, S. J. Xu, S. L. Shi, C. D. Beling, S. Fung, D. G. Zhao, H. Yang, and X. M. Tao, Probing deep level centers in GaN epilayers with variable-frequency capacitance-voltage characteristics of Au/GaN Schottky contacts, Applied Physics Letters, 89:143505, 2006.
  81. Q. Li and S. J. Xu, On luminescence of localized-state ensemble, Physics (Wu Li), 35:659, 2006. (Invited article in Chinese)
  82. R. X. Wang, S. J. Xu, A. B. Djurisic, C. D. Beling, C. K. Cheung, C. H. Cheung, S. Fung, D. G. Zhao, H. Yang, and X. M. Tao, Influence of indium-tin-oxide thin film quality on reverse leakage current of indium-tin-oxide/n-GaN Schottky contacts, Applied Physics Letters, 89:033503, 2006.
  83. Q. Li, S. J. Xu, G. Q. Li, D. C. Dai, and C. M. Che, Two-photon photoluminescence and excitation spectra of InGaN/GaN quantum wells, Applied Physics Letters, 89:011104, 2006..
  84. Y. J. Wang, S. J. Xu, and Q. Li, Anisotropic ambipolar diffusion of carriers in InGaN/GaN quantum wells, Physica Status Solidi (c), 3:1988, 2006.
  85. S. J. Xu, S. -J. Xiong, J. Liu, and H. Z. Zheng, New type of Fano resonant tunneling via Anderson impurities in superlattice, Europhysics Letters, 74:875, 2006.
  86. S. L. Shi, G. Q. Li, S. J. Xu, Y. Zhao, and G. H. Chen, Green luminescence band in ZnO: Fine structures, electron-phonon coupling and temperature effect. Journal of Physical Chemistry B, 110:10475, 2006.
  87. H. Yang, S. J. Xu, Q. Li, and J. Zhang, Resonantly enhanced femtosecond second-harmonic generation and nonlinear luminescence in GaN film grown on sapphire. Applied Physics Letters, 88:161113, 2006.
  88. S. J. Xu, G. Q. Li, S. -J. Xiong, and C. M. Che, Temperature dependence of the LO phonon sidebands in free exciton emission of GaN. Journal of Applied Physics, 99:073508, 2006.
  89. S. J. Xu, G. Q. Li, Y. J. Wang, Y. Zhao, G. H. Chen, D. G. Zhao, J. J. Zhu, H. Yang, D. P. Yu, and J. N. Wang, Quantum dissipation and broadening mechanisms due to electron-phonon interactions in self-formed InGaN quantum dots. Applied Physics Letters, 88:083123, 2006.
  90. Y. J. Wang, S. J. Xu, Q. Li, D. G. Zhao, and H. Yang, Bandgap renormalization and carrier localization effects in InGaN/GaN quantum-well light-emitting diodes with Si doping layers. Applied Physics Letters, 88:041903, 2006.
  91. S. L. Shi, S. J. Xu, X. J. Wang, and G. H. Chen, Theoretical absorption spectra of silicon carbide nanocrystals. Thin Solid Film, 495:404, 2006.

    2005

  92. S. J. Xu, S. J. Xiong, and S. L. Shi, Resonant coupling of bound excitons with LO phonons in ZnO: Excitonic polaron states and Fano interference. Journal of Chemical Physics, 123:221105, 2005. (Communications)
  93. D. C. Dai, S. J. Xu, S. L. Shi, M. H. Xie, and C. M. Che, Efficient multi-photon absorption induced luminescence in single crystalline ZnO at room temperature. Optics Letters, 30:3377, 2005.
  94. Z. F. Wei, S. J. Xu, R. F. Duan, Q. Li, J. Wang, Y. P. Zeng, and H. C. Liu, Thermal quenching of luminescence from buried and surface InGaAs self-assembled quantum dots with high sheet density. Journal of Applied Physics, 98:084305, 2005.
  95. Q. Li, S. J. Xu, M. H. Xie, and S. Y. Tong. A model for steady-state luminescence of localized-state ensemble. Europhysics Letters, 71:994–1000, 2005.
  96. S.-J. Xiong and S. J. Xu. Phonon coherence and new set of sidebands in phonon-assisted photoluminescence. Europhysics Letters, 71:459-465, 2005.
  97. Q. Li, S. J. Xu, M. H. Xie, and S. Y. Tong. Origin of the 'S-shaped' temperature dependence of luminescent peaks from semiconductors. Journal of Physics - Condensed Matters, 17:4853–4858, 2005.
  98. K. Wang, R. X. Wang, S. Fung, C. D. Beling, X. D. Chen, Y. Huang, S. Li, S. J. Xu, and M. Gong. Film thickness degradation of Au/GaN schottky contact characteristics. Materials Science and Engineering B-Solid State Materials for Advanced Technology, 117:21–25, 2005.
  99. R. X. Wang, S. J. Xu, S. Fung, C. D. Beling, K. Wang, S. Li, Z. F. Wei, T. J. Zhou, J. D. Zhang, Y. Huang, and M. Gong. Micro-Raman and photoluminescence studies of neutron-irradiated gallium nitride epilayers. Applied Physics Letters, 87:031906, 2005.
  100. S. J. Xu, G. Q. Li, S. J. Xiong, S. Y. Tong, C. M. Che, W. Liu, and M. F. Li. Spectral features of LO phonon sidebands in luminescence of free excitons in GaN. Journal of Chemical Physics, 122:244712, 2005.
  101. S. J. Xu, Y. J. Wang, Q. Li, X. H. Zhang, W. Liu, and S. J. Chua. Direct observation and theoretical interpretation of strongly enhanced lateral diffusion of photogenerated carriers in InGaN/GaN quantum well structures. Applied Physics Letters, 86:071905, 2005.
  102. 2004

  103. C. H. Cheung, A. B. Djurisic, Y. H. Leung, Z. F. Wei, S. J. Xu, and W. K. Chan. Tris(8-hydroxyquinoline) aluminium nanowires: a simple synthesis method. Chemical Physics Letters, 394:203–206, 2004.
  104. Y. Huang, X. D. Chen, S. Fung, C. D. Beling, C. C. Ling, Z. F. Wei, S. J. Xu, and C. Y. Zhi. The depth-profiled carrier concentration and scattering mechanism in undoped gan film grown on sapphire. Journal of Applied Physics, 96:1120–1126, 2004.
  105. Y. H. Leung, A. B. Djurisic, J. Gao, M. H. Xie, Z. F. Wei, S. J. Xu, and W. K. Chan. Zinc oxide ribbon and comb structures: synthesis and optical properties. Chemical Physics Letters, 394:452–457, 2004.
  106. D. Li, Y. H. Leung, A. B. Djurisic, Z. T. Liu, M. H. Xie, S. L. Shi, S. J. Xu, and W. K. Chan. Different origins of visible luminescence in ZnO nanostructures fabricated by the chemical and evaporation methods. Applied Physics Letters, 85:1601–1603, 2004.
  107. G. H. Li, F. H. Su, B. S. Ma, K. Ding, S. J. Xu, and W. Chen. Photoluminescence of doped ZnS nanoparticles under hydrostatic pressure. Physica Status Solidi B-Basic Research, 241:3248–3256, 2004.
  108. F. H. Su, Z. L. Fang, B. S. Ma, K. Ding, G. H. Li, and S. J. Xu. Temperature and pressure behavior of the emission bands from Mn-, Cu-, and Eu-doped zns nanocrystals. Journal of Applied Physics, 95:3344–3349, 2004.
  109. S. J. Xu, Q. Li, J. R. Dong, and S. J. Chua. Interpretation of anomalous temperature dependence of anti-stokes photoluminescence at GalnP(2)/GaAs interface. Applied Physics Letters, 84:2280–2282, 2004.
  110. 2003

  111. Q. Li, Z. L. Fang, S. J. Xu, G. H. Li, M. H. Xie, S. Y. Tong, X. H. Zhang, W. Liu, and S. J. Chua. Large excitation-power dependence of pressure coefficient of InxGa1-xN/InyGa1-yN quantum wells. Physica Status Solidi B-Basic Research, 235:427–431, 2003.
  112. X. H. Lu, P. Y. Yu, L. X. Zheng, S. J. Xu, M. H. Xie, and S. Y. Tong. Evidence for a type-II band alignment between cubic and hexagonal phases of GaN. Applied Physics Letters, 82:1033–1035, 2003.
  113. S. J. Xu, H. J. Wang, S. H. Cheung, Q. Li, X. Q. Dai, M. H. Xie, and S. Y. Tong. Shallow optically active structural defect in wurtzite GaN epilayers grown on stepped 4h-SiC substrates. Applied Physics Letters, 83:3477–3479, 2003.
  114. D. G. Zhao, S. J. Xu, M. H. Xie, S. Y. Tong, and H. Yang. Stress and its effect on optical properties of GaN epilayers grown on Si(111), 6H-SiC(0001), and c-plane sapphire. Applied Physics Letters, 83:677–679, 2003.
  115. 2002

  116. X. D. Chen, S. Fung, C. D. Beling, Y. Huang, Q. Li, S. J. Xu, M. Gong, T. Henkel, H. Tanoue, and N. Kobayashi. Photoluminescence characterization of beryllium-implanted 6H-silicon carbide. Solid State Communications, 121:67–71, 2002.
  117. Q. Li, S. J. Xu, M. H. Xie, S. Y. Tong, X. H. Zhang, W. Liu, and S. J. Chua. Strong screening effect of photo-generated carriers on piezoelectric field in In0.13Ga0.87N/In0.03Ga0.97N quantum wells. Japanese Journal of Applied Physics Part 2-Letters, 41:L1093–L1095, 2002.
  118. Rusli, M. B. Yu, S. F. Yoon, S. J. Xu, K. Chew, J. Ahn, and Q. Zhang. Deposition of hydrogenated nanocrystalline silicon carbide by ECR-CVD. International Journal of Modern Physics B, 16:1039–1046, 2002.
  119. S. J. Xu, W. Liu, and M. F. Li. Direct determination of free exciton binding energy from phonon-assisted luminescence spectra in GaN epilayers. Applied Physics Letters, 81:2959–2961, 2002.
  120. S. J. Xu, L. X. Zheng, S. H. Cheung, M. H. Xie, S. Y. Tong, and H. Yang. Comparative study on the broadening of exciton luminescence linewidth due to phonon in zinc-blende and wurtzite GaN epilayers. Applied Physics Letters, 81:4389–4391, 2002.
  121. 2001

  122. S. Fung, X. D. Chen, C. D. Beling, Y. Huang, Q. Li, S. J. Xu, M. Gong, T. Henkel, H. Tanoue, and N. Kobayashi. Photoluminescence study of beryllium implantation induced intrinsic defects in 6H-silicon carbide. Physica B-Condensed Matter, 308:710–713, 2001.
  123. Q. Li, S. J. Xu, W. C. Cheng, M. H. Xie, S. Y. Tong, C. M. Che, and H. Yang. Thermal redistribution of localized excitons and its effect on the luminescence band in InGaN ternary alloys. Applied Physics Letters, 79:1810–1812, 2001.
  124. H. Wang, S. J. Xu, Q. Li, and S. L. Feng. X-ray diffraction analysis on gallium-indium interdiffusion in quantum dot superlattices. Chinese Physics Letters, 18:810–812, 2001.
  125. S. J. Xu, C. T. Or, Q. Li, L. X. Zheng, M. H. Xie, S. Y. Tong, and H. Yang. Defect states in cubic GaN epilayer grown on GaAs by metalorganic vapor phase epitaxy. Physica Status Solidi A-Applied Research, 188:681–685, 2001.
  126. L. X. Zheng, M. H. Xie, S. J. Xu, S. H. Cheung, and S. Y. Tong. Current-induced migration of surface adatoms during GaN growth by molecular beam epitaxy. Journal of Crystal Growth, 227:376–380, 2001.

    2000

  127. S. J. Xu, W. Liu, and M. F. Li. Effect of temperature on longitudinal optical phonon-assisted exciton luminescence in heteroepitaxial GaN layer. Applied Physics Letters, 77:3376–3378, 2000.
  128. S. J. Xu, H. Wang, Q. Li, M. H. Xie, X. C. Wang, W. J. Fan, and S. L. Feng. X-ray diffraction and optical characterization of interdiffusion in self-assembled InAs/GaAs quantum-dot superlattices. Applied Physics Letters, 77:2130–2132, 2000.
  129. S. J. Xu, M. B. Yu, Rusli, S. F. Yoon, and C. M. Che. Time-resolved photoluminescence spectra of strong visible light-emitting SiC nanocrystalline films on Si deposited by electron-cyclotron-resonance chemical-vapor deposition. Applied Physics Letters, 76:2550, 2000.
  130. M. B. Yu, Rusli, S. F. Yoon, S. J. Xu, K. Chew, J. Cui, J. Ahn, and Q. Zhang. Hydrogenated nanocrystalline silicon carbide films synthesized by ECR-CVD and its intense visible photoluminescence at room temperature. Thin Solid Films, 377:177, 2000.

    1999

  131. X. C. Wang, S. J. Xu, S. J. Chua, Z. H. Zhang, W. J. Fan, C. H. Wang, J. Jiang, and X. G. Xie, Widely tunable intersubband energy spacing of self-assembled InAs/GaAs quantum dots due to interface intermixing. Journal of Applied Physics, 86:2687, 1999.
  132. G. Li, S. J. Chua, S. J. Xu, W. Wang, P. Li, B. Beaumont, and P. Gibart, Nature and elimination of yellow-band luminescence and donor-acceptor emission of undoped GaN. Applied Physics Letters, 74:2821, 1999.
  133. Y. W. Zhang, S. J. Xu, and C.-h. Chiu, Vertical self-alignment of quantum dots in superlattices.  Applied Physics Letters, 74:1809, 1999.
  134. X. C. Wang, S. J. Xu, S. J. Chua, K. Li, X. H. Zhang, Z. H. Zhang, K. B. Chong, and X. Zhang, Strong influence of SiO2 thin film on properties of GaN epilayers. Applied Physics Letters, 74:818, 1999.

    1998

  135. G. Li, S. J. Chua, S. J. Xu, X. C. Wang, A. S. Helmy, M-L. Ke, and J. H. Marsh, Silica capping for AlGaAs/GaAs and InGaAs/GaAs quantum well intermixing. Applied Physics Letters, 73:3393, 1998.
  136. S. J. Xu, S. J. Chua, T. Mei, X. C. Wang, X. H. Zhang, G. Karunasiri, W. J. Fan, C. H. Wang, J. Jiang, S. Wang, and X. G. Xie, Characteristics of InGaAs quantum dot infrared photodetector. Applied Physics Letters, 73:3153, 1998.
  137. W. X. Que, Y. Zhou, Y. L. Lam, Y. C. Chan, C. H. Kam, B. Liu, L. M. Gan, C. H. Chew, G. Q. Xu, S. J. Chua, S. J. Xu, and F. V. C. Mendis, Photoluminescence and electroluminescence from copper doped zinc sulphide nanocrystals/polymer composite. Applied Physics Letters, 73:2727, 1998.
  138. S. J. Chua, S. J. Xu, X. H. Zhang, X. C. Wang, T. Mei, W. J. Fan, C. H. Wang, J. Jiang, and X. G. Xie, Polarization dependence of intraband absorption in self-organized quantum dots. Applied Physics Letters, 73:1997, 1998.
  139. S. J. Xu, S. J. Chua, B. Liu, L. M. Gan, C. H. Chew, and G. Q. Xu, Luminescence characteristics of impurities-activated ZnS nanocrystals prepared in microemulsion with hydrothermal treatment. Applied Physics Letters, 73:478, 1998.
  140. X. H. Zhang, S. J. Chua, S. J. Xu, and W. J. Fan, Band offsets at the InAlGaAs/InAlAs (001) heterostructures lattice matched to an InP substrate. Journal of Applied Physics, 83:5852, 1998.
  141. S. J. Xu, X. C. Wang, S. J. Chua, C. H. Wang, W. J. Fan, J. Jiang, and X.G. Xie, Effects of rapid thermal annealing on structure and luminescence of self-assembled InAs/GaAs quantum dots.  Applied Physics Letters, 72:3335, 1998.
  142. S. J. Xu, G. Li, S. J. Chua, X. C. Wang, and W. Wang, Observation of optically-active metastable defects in undoped GaN epilayers. Applied Physics Letters, 72:2451, 1998.
  143. W. Liu, M. F. Li, S. J. Xu, K. Uchida, and K. Matsumoto, Phonon-assisted photoluminescence in wurtzite GaN epilayer.  Semiconductor Science and Technology, 13:769, 1998.
  144. S. Bastola, S. J. Chua, and S. J. Xu, Blueshift of effective band gap in n-i-p-i doping superlattices as a function of optical excitation intensity.  Journal of Applied Physics, 83:1476, 1998.
  145. X. H. Zhang, S. J. Chua, S. J. Xu, and W. J. Fan, First-principles calculations of GaAs1-xPx-Al0.3Ga0.7As(001) band offsets. Journal of Physics - Condensed Matters, 10:577, 1998.

    before 1998

  146. A. Y. Du, M. F. Li, T. C. Chong, S. J. Xu, Z. Zhang, and D. P. Yu, Investigation of dislocations and traps in MBE grown p-InGaAs/GaAs heterostructures. Thin Solid Films, 311:7, 1997.
  147. L. M. Gan, B. Liu, C. H. Chew, S. J. Xu, S. J. Chua, G. L. Loy, and G. Q. Xu, Enhanced photoluminescence and characterization of Mn-doped ZnS nanocrystallites synthesized in microemulsion.  Langmuir, 13:6427, 1997.
  148. J. Liu, E. Gornik, S. J. Xu, and H. Z. Zheng, Sequential resonant tunnelling through Landau levels in GaAs/AlAs superlattices. Semiconductor Science and Technology, 12:1422, 1997.
  149. X. Zhang, S. J. Chua, S. J. Xu, K. B. Chong, and K. Onabe, Optical property of a novel (111)-oriented quantum structure.  Applied Physics Letters, 71:1840, 1997.
  150. S. J. Xu, S. J. Chua, X. Zhang, Z. H. Zhang, C. P. Luo, Z. L. Yuan, Z. Y. Xu, and J. M. Zhou, Optical characterization of InAs monolayer quantum structures grown on (311)A, (311)B, and (100)GaAs substrates. IEEE Journal of Selected Topics on Quantum Electronics, 3:471, 1997.
  151. S. J. Chua, X. H. Zhang, S. J. Xu, and X. Gu, First-principles calculations of band offsets of AlxGa1-xP-GaP(001) heterostructures. Journal of Physics - Condensed Matters, 9:L279, 1997.
  152. S. J. Xu, S. J. Chua, X. H. Tang, and X. H. Zhang, Strong interaction of Fermi-edge singularity and exciton related to N=2 subband in a modulation-doped AlGaAs/InGaAs/GaAs quantum well. Physical Review B, 54:17701, 1996.
  153. K. J. Luo, H. Z. Zheng, S. J. Xu, X. P. Yang, P. H. Zhang, W. Zhang, and C. F. Li, Perpendicular-electric-field dependence of exciton binding energy studied by continuous-wave photoluminescence. Physical Review B, 53:16453, 1996.
  154. S. J. Chua, S. J. Xu, and X. H. Tang, AlGaAs optical phonon replicas in the photoluminescence spectra of GaAs layer in an Al0.3Ga0.7As/GaAs heterostructure. Solid State Communications, 98:1053, 1996.
  155. S. J. Xu, J. Liu, H. Z. Zheng, S. J. Chua, Y. X. Li, W. C. Cheng, P. H. Zhang, and X. P. Yang, Temperature dependence of the low-field mobility of a very narrow miniband in the degenerate case. Physics Letter A, 212:97, 1996.
  156. K. J. Luo, H. Z. Zheng, S. J. Xu, P. H. Zhang, W. Zhang, and X. P. Yang, Direct observation for the reduction of exciton binding-energy induced by perpendicular electric-field. Applied Physics Letters, 67:2642, 1995.
  157. S. J. Xu, D. S. Jiang, G. H. Li, Y. H. Zhang, and J. S. Luo, Anticrossing due to resonant coupling of hole levels in asymmetric coupled-quantum-wells. Chinese Physics Letters, 10:433, 1993.
  158. S. J. Xu, D. S. Jiang, G. H. Li, and J. S. Luo, Carrier nonresonant tunneling in asymmetric coupled double quantum-wells. Superlattices and Microstructures, 12:231, 1992.

      

 

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