Research Achievements
Relevant Previous Achievements

 

Fast algorithms for propagation of electromagnetic wave and circuit simulators

W.C. Chew has invented a series of fast algorithms for solving electromagnetic scattering and inverse problems. His research group has developed parallel codes that solve dense matrix systems with tens of millions of unknowns for the first time for integral equations of scattering, which has been used to simulate the propagation of electrical signals through integrated circuits. K.L. Wu is an expert in electromagnetic numerical modelling. P. Chan led a team of engineers that defined and developed a CAD system to design multi-chip module products. This effort led to the first functional 486 based multi-chip module at Intel.

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Quantum transport in nanoscale and molecular devices

H. Guo and J. Wang have pioneered the field of first-principles simulation of quantum transport through nano-electronic devices. They have developed a density-functional theory coupled to nonequilibrium Green's function theory to calculate the currents through molecular and nanoscopic electronic devices (Phys. Rev. B 63, 245407 (2001), times cited: 362). This work represents a very important step forward in nano-electronics theory and laid the foundation of the first-principles theory and modeling of molecular electronics. G.H. Chen and his group have pioneered the first-principles quantum mechanical simulation of transient currents through molecular and nanoscopic electronic devices (Phys. Rev. B 75, 195445 (2007)). The method developed has been applied to simulate the switch-on or off of a molecular device for the first time from first-principles. Since the quantum transport in nano-devices especially in AC bias is in general a nonequilibrium process, equilibrium quantum transport theory such as scattering matrix theory is not adequate to describe this process. J. Wang is also an expert in nonequilibrium quantum transport theory and has formulated a proper theoretical framework based on the nonequilibrium Green's functions to predict finite frequency AC and nonlinear DC quantum transport properties.

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Strongly correlated electron systems and spintronics

Electron-electron correlation continues to be one of the most challenging problems in condensed matter physics. Our team has been in the forefront of this field. In a well known paper, the coordinator and T. M. Rice at ETH-Zurich proposed a microscopic model as a minimum model to understand some essential properties of high transition temperature superconducting copper oxides, which has become a widely adopted mathematic model to study the copper oxides (Phys. Rev. B 39, 3759 (1988), with over 2000 citations). The proposed composite particle of the charge carrier is now called "Zhang-Rice singlet". The theory that the coordinator subsequently developed with his collaborators (Supercon. Sci and Tech. 1, 36 (1988)) has become an important part of so-called "plain vanilla version" of one of the theories to explain high transition temperature superconductivity.

Spintronics, or spin electronics, involves the study of active control and manipulation of electron's magnetic spin (a tiny compass) in materials. Recently, this field has been developing rapidly for its potential applications in electronic devices. Our team has been actively working on recent development in this field. Zhang and his collaborators studied spin Hall effect of a 2-dimensional electron gas in a uniform magnetic field and predicted a resonant spin Hall conductance (Phys. Rev. Lett. 92, 256603 (2004)). J. Wang and H. Guo have studied spin currents and spin Hall conductance fluctuations in mesoscopic systems (Phys. Rev. Lett. 98, 196402 (2007); 100, 066803 (2008)). Cui and J. N. Wang have studied spin current injection and detection by optical and transport means.

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Fast algorithm for quantum mechanical simulation of electronic dynamic processes

The computational time of O(N) method scales linearly with the system sizes, and is thus the most efficient method for very large systems. G.H. Chen has developed the first O(N) quantum mechanical method for electronically excited systems (Phys. Rev. B 59, 7259 (1999)). Recently Chen has extended density-functional theory to open systems, and thus laid the rigorous foundation of first-principles method for realistic nanoscopic molecular devices (Phys. Rev. B 75, 195445 (2007)). The method has been used to simulate the transient currents through a carbon nanotube based electronic device. In collaboration with Thomas Frauenheim of Bremen University, Chen and his students have implemented the new method with an approximate density-functional theory (density-functional tight-binding method), and thus make it possible to simulate the transient currents through novel electronic devices with dimension up to 10 nm on a modest PC cluster.

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Transport measurement of a single molecule and novel semiconductor devices

X.D. Cui has developed a method for making electrical contact to single molecules and has performed the first repeatable measurement of current through a single molecule (Science 294, 571 (2001)). The method is a powerful tool to study the electrical properties of molecular mesoscopic systems. The work was highlighted in an article in Science, "It's all about the contacts", and was listed in "Highlights of 2001" in Chemical and Engineering News (Dec. 2001). J.N. Wang has developed a novel technique to fabricate GaAs/AlGaAs quantum wire resonant tunneling diodes. The electronic one-dimensional states and wavefunctions of these devices have been measured for the first time by magneto-resonant tunneling spectroscopy (Phys. Rev. Lett. 73, 1146 (1994); 75, 1996 (1995)).

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Exact theory for the real-time dynamics of quantum transport and related systems

Y.J. Yan has constructed a reduced density matrix based theory, which is not just formally exact, but also by far the most tractable approach to the real-time dynamics of general quantum transport and related problems; see J. Chem. Phys. 128, 234703 (2008); 129, 184112 (2008); 130, 164708 (2009).

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Computational imaging for optical projection lithography

The design of photomasks used in the optical lithography process must take into account the various optical effects inherent in the system. E. Lam has developed inverse imaging technology for an automatic efficient optical proximity correction design used for mask synthesis. He has also pioneered a phase initialization mechanism which enhances the robustness of mask design against variations in imaging conditions (Opt. Exp. 16, 14746 (2008)). His work has received a best paper award at the SPIE Lithography Asia conference in Taiwan.

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Current Research

 

Atomistic-TCAD:

 

       This objective is to simulate, from first-principles, the electrical properties and processes of emerging devices with atomistic details. To realize this objective we are developing a powerful atomistic-TCAD tool and have achieved decisive progress (TCAD stands for Technology Computer Aided Design). Our atomistic-TCAD is centered on the NEGF-DFT method where density functional theory (DFT) is carried out within the nonequilibrium Green’s function (NEGF) framework, as such the nonlinear and nonequilibrium quantum transport problems including all atomistic degrees of freedom are solved self-consistently without phenomenological parameters. We have successfully developed the atomistic-TCAD prototyping software platform that solved six critical problems:

  1. By implementing the modified Becke-Johnson (MBJ) semi-local exchange potential in NEGF-DFT, we achieved necessary accuracy for the calculated band gaps, dispersions, effective mass of important electronic materials Si, Ge and all zinc-blend III-Vs. Band offsets of GaAs/AlxGa1-xAs for the entire range of concentration x were also obtained with very good accuracy. Since MBJ is not a fundamental theory for resolving electron correlation, we have carefully investigated its relevant and fundamental issues and arrived at a good understanding of its applicability.
  2. By implementing coherent potential approximation (CPA) and nonequilibrium vertex correction (NVC), and by a new theoretical development of the nonequilibrium CPA, we achieved necessary accuracy and computational stability for calculating impurity doped materials, impurity scattering, disorder averaged transport properties and conductance fluctuations.
  3. By developing special algorithms and good parallelism, the atomistic-TCAD has solved problems involving many hundreds, thousands and the largest 19,200 Si atomic sites in the device channel by NEGF-DFT self-consistently, where DFT is within the linear muffin tin orbital (LMTO) method with atomic sphere approximation (ASA). We also have LCAO (linear combination of atomic orbitals) and Gaussian based NEGF-DFT methods that do not rely on ASA to solve problems with up to several hundred atoms (largest about 900 Si atoms with double-zeta polarized basis in LCAO).
  4. Our NEGF-DFT has been benchmarked by comparing calculated results with Synopsys/Sentaurus which is an industrial strength TCAD tool that uses many phenomenological parameters. Work has also started to benchmark against another industrial TCAD Silvaco/Atlas. Since different industrial TCAD tools (by different firms) differ in details of their device model while our atomistic-TCAD is a unified tool, benchmarking against different industrial TCAD tools is useful. The figure shows the quantitative benchmarking of self-consistent potential profiles inside two-terminal Si device channels at room temperature with uniform channel doping in n-p-n and p-n-p devices. Excellent agreements between the NEGF-DFT and the Sentaurus device simulation results for different dopant atoms, concentrations and doping profiles are observed. They validate the NEGF-DFT part of our atomistic-TCAD. Importantly, for modeling emerging systems and/or new device concepts, the lack of phenomenological parameters makes traditional TCAD powerless while our atomistic-TCAD is most powerful.
  5. To save computational time, our atomistic-TCAD also includes a tight binding (TB) model for quantum transport analysis. We have developed a good fitting procedure to obtain standard Slater-Koster parameters for which the input is the fitting target - usually a band structure or several band structures obtained by DFT. The output is the TB which has a number of useful features for device modeling including orthogonal/non-orthogonal basis, various interaction ranges, combination of various types of atoms and orbitals, collinear spin and spin-orbit terms. Our TB for the interesting 2d transition metal dichalcogenides MoS2 is shown in the figure below. Our transport codes have achieved calculation of transmission coefficients of Si channels with (10nm)2 cross section having more than one million atoms (10 orbitals per atom) on a 32-core cluster.
  6. High frequency and transient transport properties are more difficult to compute from atomistic methods due to the extra variable involved (frequency or more difficultly, time). We have achieved excellent understanding of the intrinsic electron dynamics by either the perturbative approach with NEGF-DFT or by direct integration of TDDFT equations for open device structures. Comprehensive NEGF derivations were completed and preliminary atomistic calculations carried out on systems involving up to 156 atoms. Direct comparison between frequency- and time-domain was made on a two-terminal carbon nanotube device: perfect agreement of the calculated dynamic admittance from the two approaches was found. Very recently we have discovered a complex absorbing potential (CAP) approach that cuts down computation time from O(N2) scaling to O(N) where N is the number of time steps. We are confident that the new code based on NEGF-DFT-CAP will take us to reach much larger time scales not accessible by any existing atomistic first principles modeling methods.
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Computational Electromagnetics:

 

       This objective is to employ efficient electromagnetic solvers to simulate electrical signals, power delivery, crosstalk, interference, and noise in multi-scale complex integrated circuits. Central to this objective is to develop techniques and software to efficiently solve multi-scale phenomena in computational electromagnetics (CEM). Disparate sizes in geometrical models induce both low-frequency circuit physics and high-frequency wave physics, resulting in ill-conditioned matrix equations in CEM. This problem becomes especially difficult for our AoE project, since we model all the way from atomistic systems to macroscopic heterogeneous systems, spanning huge length scales. Recently, we successfully advanced CEM in very substantial ways and our innovation attracted industry funding from Huawei Technologies Co. Ltd. (China) and Asian Office of Aerospace Research and Development (USA). The solution to the CEM problems also allowed us to discover innovative numerical methods for solving the Poisson equation and the self-energy equation of NEGF-DFT. Collaborations within AoE have made use of these innovations to realize multi-scale simulations of a proposed junctionless transistor. Focusing on solving three critical challenges: (a) low frequency stability and accuracy, (b) simulation speed, and (c) the complexity of objects, we have discovered new methodologies to handle low frequency CEM with superior speed for complex physical layers of integrated circuits. The following summarize the major achievements and our continuing research effort in this objective.

  1. We have successfully addressed the low-frequency breakdown and inaccuracy problems in the Calderón multiplicative preconditioned electric field integral equation (CMP-EFIE). We have discovered a new perturbation theory to reformulate the problem in such a way that the electric currents at different frequency orders as a power series can be calculated accurately. We have successfully applied our perturbation method on CMP-EFIE for capacitive structures with open surfaces. The electric currents on closed surfaces can be accurately computed at very low frequencies.
  2. Using novel tree browsing we developed a new fast Poisson solver for static device modeling. The fast multipole algorithm at low frequency is accelerated by rotation methods to increase the feasible multipole truncation number. As shown in the figure, our method solves the Poisson equation in O(N) where N is the number of finite element triangles (data fitted to the red line). It dramatically reduces calculation time compared to traditional FEM with iterative method is seen. Together with Augmented Electric Field Integral Equation, we have demonstrated simulations for on-chip structures that cannot be handled by even the leading commercial tools.
  3. A hybrid electromagnetics circuit simulator is created for incorporating multiport lumped circuit networks through their admittance matrices into the discontinuous Galerkin time-domain (DGTD) method. By splitting the computational domain of interest into two subdomains, one for the EM part solved by the DGTD, and another, the circuit part modeled by the basic I-V relationships in the time domain. These two domains are coupled at lumped ports. The port voltages and currents are solved via the coupled systems. Due to the local properties of DGTD operations, only small coupling matrix systems are involved. Further improvement in efficiency is achieved by a local time-stepping strategy.
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Simulating Emerging Electronic Materials:

 

       This objective is to model electrical, chemical and mechanical properties of new materials for emerging technology. Central to this objective is to develop efficient software tools for determining the atomic structures of new materials that enter emerging electronic devices. While the electronic properties and atomic structures of crystalline solids are obtained by our atomistic-TCAD presented above, our AoE has focused to develop a software platform for simulating the structures of amorphous dielectric materials. In particular, high-κ materials are very important for gate oxides in nano-scale transistors but they are very difficult to simulate due to the large time scales required. The major achievement here was the development of a combined approach of classical molecular dynamics (MD) - for structure evolution, and quantum mechanical DFT - for electronic structure analysis. The power of this combined software method is demonstrated by calculating properties of structural and lattice dielectric constants of bulk amorphous metal oxides.

       Our classical MD is based on the Born-Mayer-Buckingham potential function within a melt-and-quench scheme. It has successfully generated various amorphous structures of high-κ metal oxides Hf1−xZrxO2 with different values of the concentration x. The coordination numbers and the radial distribution functions of the structures are in good agreement with the corresponding experimental data. We have then calculated the lattice dielectric constants of these materials from DFT: the values, averaged over an ensemble of samples, agree very well with the available experimental values. The figure shows the calculated lattice dielectric constants (κL) for the amorphous structures of Hf1−xZrxO2. All the black symbols are for the values in each direction of X, Y, and Z averaged over ten samples, while the square symbols connected with a solid red line represent the values which are averaged over all three directions for each value of concentration x. In the inset the standard deviations of dielectric constants over the ten samples along the X direction are given. Most importantly, our combined approach allows us to simulate many amorphous structures efficiently to obtain averaged result, while such calculations would be hard to do if only DFT is solely used for structure generation.

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Emerging Spintronics:

 

       This objective is to develop modeling tools for simulating emerging spintronics and magnetic random access memory (MRAM). Since spintronics is itself a frontier science with huge gaps in its conceptual understanding for many situations that are on top and beyond the present theory, a major effort of AoE is to investigate at the conceptual level this emerging phenomena, in addition to developing and perfecting the spin resolved-transport modeling using our atomistic-TCAD.

       The major achievement in this objective is the pioneering exploration of what we now call valley optoelectronics in 2D transition metal dichalcogenides, where we first demonstrated experimentally the preliminary valley optoelectronic control and dynamic pumping of valley pseudospin (in parallel with the independent works by Heinz group at Columbia U and a Peking U-CAS group). In many semiconductors, the band edges are located at degenerate non-central valleys (i.e. energy extrema of bands) in the momentum space. The large separation between the valleys renders intervalley scattering inefficient; hence a valley polarization (i.e. more occupation of one valley than its degenerate counterparts, an analog of spin polarization) can have long lifetimes. Interestingly, the valley index of carrier can be exploited as information carrier. We have discovered that 2D group-VI transition metal dichalcogenides (TMDC) can offer such new valley based electronics. Experimentally and theoretically, members of the AoE have made pioneering studies on valley optoelectronics in 2D TMDCs. This figure shows the general valley dependent optical selection rule in TMDCs (such as WS2). The interband transition between conduction and valence band edges at K (–K) couples only to left (right) circularly polarized light. The very high impact results of this emerging valley-spintronic system have been published in such journals as Nature Nanotechnology and PRL.

 

       AoE has continued its effort to model both traditional and emerging MRAM made of magnetic tunnel junctions (MTJ). Using macrospin and micromagnetics simulations, members of AoE have predicted that the ferromagnetically coupled synthetic ferromagnetic free layers in MTJ can be driven into oscillating state without applied magnetic field; this is a very useful discovery for practical applications of torque based MRAMS. In a related direction, we have used our atomistic-TCAD tool to investigate new MTJs that is based on the abundant NaCl insulating barrier with FePt injecting electrodes. Large tunnel magnetoresistance ratio was predicted for this system. Since NaCl is much easier to grow on FePt than the commonly studied Mg on Fe, an interesting emerging MTJ may be found.

       With these major conceptual achievements and with our software platforms for simulating spin polarized quantum transport, AoE has reached the critical turning point from mainly modeling metal spintronics (such as MRAMs) to semiconductor spintronics. These achievements will allow the atomistic-TCAD of AoE to have powerful features that simply do not exist in any standard TCAD existing today.

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Fabrication:

 

       This objective is to use electron beam lithography to fabricate emerging devices for measurements and calibration of the software tools of the AoE. While our software developments and preliminary platforms have been used to calculate pertinent results that can be qualitatively and quantitatively compared to experimental data in the literature, or compared to industrial TCAD as demonstrated above, we believe better comparisons can be made with experimental results of our own. We have developed processes to fabricated nanowires with different cross-sections. Our technique can be used to fabricate experimental transistors (for example Tunneling FET) for model calibration including process variation study. The figure shows FinFET and FinTFET fabrications carried out by members of AoE in facilities at HKUST, and the SEM images of these device structures. We have also developed physical models of the devices and characterized these physical models by measuring I-V curves of the fabricated devices. The fact that we can fabricate these highly demanding device structures and also characterize them, is a major achievement.

       With this important achievement and with the development of physical models of these devices in which the physical parameters can be extracted from the data, AoE has reached the critical transition from mainly theoretical/numerical R&D to being able to predict physical parameters to directly and quantitatively compare with our own data.

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Multi-scale modeling and i-MOS:

 

       This objective is to develop a set of multi-scale modeling tools for emerging devices and integrated circuits. Very important is also the development of overall software front-end that serves as the AoE software controller and graphical user interface (GUI).

       As already presented above, on the atomistic side, AoE has developed various modeling tools ranging from NEGF-DFT that can handle up to about ten thousand atoms self-consistently, to TB methods that can calculate transport for systems at a million atom level, and connecting the two with our TB parameter generation. On the macroscopic side, AoE has developed fast numerics to solve the effective mass k.p Hamiltonian for quantum transport within NEGF (see Appendix II-2.3), and purely SPICE type physical models (see Appendix II-5.1&2). An extremely difficult task is to seamlessly connect the atomic models with the macroscopic models for transport. To this end, a major achievement is the independent development of a quantum mechanics/electromagnetics (QM/EM) method. The idea is to divide the device into QM and EM regions which are simulated with the QM and EM methods, respectively. The key issue is the boundary matching at the QM/EM interface which requires extremely careful and detailed investigations. The current density at the interface is used as a part of the boundary condition for the EM calculation, and the Hartree potential at the interface is used as a part of the boundary condition for the QM calculation. As a result, current, potential and charge distributions are continuous across the QM/EM interface. To demonstrate, the QM/EM method was used to calculate the I-V curves of experimental junctionless Si transistors, which were used to construct the corresponding compact model. The compact model can be used for SPICE simulation. The figure shows the simulation of an inverter made of junctionless Si transistors. The qualitative features are correctly obtained. Further details of the QM/EM can be found in the Appendix II-6-A.1.

       Another very significant achievement of AoE is the successful development of the web-based device simulator called i-MOS. The idea is to create an on-line simulation platform for the compact model and circuit simulation community. The first interactive Modeling and Online Simulation (i-MOS) platform was launched in June 2012. So far, the platform has the following services:

  1. A Verilog-A compiler for model developer to submit their models to be included in the i-MOS;
  2. Standard benchmark test processes to qualify and ensure that the submitted models are complete, continuous and differentiable over all voltage range;
  3. An online simulation platform for users to directly perform circuit simulation over the internet.

       The i-MOS Platform developed by Prof. Mansun Chan’s group is the first attempt to provide a standard to develop compact models and perform online simulation. Currently, it has attracted more than 100 users from various universities and the industry. After 2 years of i-MOS’ introduction, NSF and the Semiconductor Research Corp. have funded the same initiative with a funding of USD 6 million to develop the Nano-Engineered Electronic Device Simulation (NEEDS) program (https://nanohub.org/groups/needs/) which has very similar objectives and methodologies as i-MOS. We are about two year ahead in this initiative.

       We have developed a complete GaN HEMT model called e-HEMT together with Tsinghua University and the model has been released through i-MOS. Recently, the compact model council (CMC) has solicited e-HEMT to be a candidate for the industrial standard model for GaN HEMT (http://www.geia.org/CMC-accomplishments).

       The TFET physical model developed by members of AoE (see Objective 5 and Appendix II-5.1) has been implemented on the i-MOS platform that users can test and verify. The figure is a screen shot of i-MOS. Most importantly, i-MOS serves as the overall AoE software controller and GUI. Further details about i-MOS can be found in Appendix II-6-B.3.

       With these important achievements and with the development our various software platforms presented above, AoE has reached the turning point from separately developing methods by our teams for various domains of R&D, to being able to unify the simulation methods into a powerful software platform under i-MOS. This will be delivered as the final “product” that achieves the overall aim of the AoE, namely the next generation electronic design automation tool which combines the atomistic simulation of individual devices and the modeling of the circuitry. With the continued support of UGC/RGC for the second half of this project, we are confident this ambitious and far reaching goal will be realized by our AoE.

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Publications

 

Conference papers:

 

  1. X.N. Wang, X. Ying, Y.J. Liu, S.Q. Xin, W.P. Wang, X. Gu, W. Mueller-Wittig and Y. He. “Intrinsic computation of centroidal Voronoi tessellation (CVT) on meshes”, Computer-Aided Design, vol. 58, no. 1, (2015), 5161
  2. L. Liu, Y. J. Zhang, Y. Liu and W.P. Wang, Feature-preserving T-mesh construction using skeleton-based polycubes, Computer-Aided Design, vol. 58, no. 1, (2015), 162-172
  3. Xiaoyan Xiong, Li Jun Jiang, Jos´e E. Schutt-Ain´e and Weng Cho Chew, “Blackbox Macro-modeling of the Nonlinearity Based on Volterra Series Representation of X-Parameters”, 2014 IEEE 23rd Electrical Performance of Electronic Packaging and Systems (EPEPS), 26 Oct - 29 Oct 2014, Portland, Oregon, USA (The Best Overall Paper of IEEE 23rd EPEPS Conference)
  4. Y. P. Chen, L. Jiang, S. Sun, and W. C. Chew, "Calderon preconditioned PMCHWT equation for layered medium problems," in IEEE Int. Symp. on Antennas and Propag., July, 2014.
  5. Y. P. Chen, M. Meng, S. Sun, L. Jiang, and W. C. Chew, "Analysis of scattering by PEC objects in layered medium with Calderon preconditioner,” in IEEE Int. Symp. on Antennas and Propag., July, 2014.
  6. Z. H. Ma, S. Sun, L. Jiang, W. C. Chew, M. K. Li, "Improved field projection in equivalence principle algorithm with rotated CWBC basis,” in IEEE Int. Symp. on Antennas and Propag., July, 2014.
  7. Y. L. Li and S. Sun, "Study of displacement current effect for planar coils in layered medium," in IEEE Int. Symp. on Antennas and Propag., July, 2014.
  8. Y. Li, S. Sun, and W. C. Chew, "Fast perturbation-based integral equation method with accelerated Cartesian expansion," in IEEE Int. Symp. on Antennas and Propag., July, 2014.
  9. M. M. Jia, S. Sun, and W. C. Chew, "Accelerated A-EFIE with perturbation method using fast Fourier transform," in IEEE Int. Symp. on Antennas and Propag., July, 2014.
  10. Jia Li and Edmund Y. Lam, “Joint optimization of source, mask, and pupil in optical lithography,” in Optical Microlithography, volume 9052 of Proceedings of the SPIE, pp. 90520S, February 2014.
  11. Lining Zhang, Muthupandian Cheralathan, Aixi Zhang, Salahuddin Raju and Mansun Chan (invited), “Developing a Common Compact Modeling Platform for Model Developers and Users”, 2014 Nanotechnology Conference and Trade Show, pp. 533-536, June 15-18, 2014, Washington DC, USA
  12. Salahuddin Raju, Xing Li, Yan Lu, C. T. Tsui, W. H. Ki, Mansun Chan and C. Patrick Yue, “Efficient Wireless Power Transmission Technology Based on an Above CMOS Integrated (ACI) High Quality Inductors”, 2014 IEEE International Electron Device Meeting (IEDM), Dec. 15-17, 2014, San Francisco, USA
  13. Qing Shi, Lining Zhang, Y. Zhu, L. Liu, Mansun Chan and Hong Guo, “Atomic Disorder Scattering in Emerging Transistors by Parameter-Free First Principle Modeling*”, 2014 IEEE International Electron Device Meeting (IEDM), Dec. 15-17, 2014, San Francisco, USA
  14. Yin Sun, Lining Zhang, Zubair Ahmed, Dipu Kabir and Mansun Chan, “Bias Stress Induced Threshold Voltage Instability in Solution Processed Organic Thin Film Transistor”, 2014 International Conference on Solid-State and Integrated Circuit Technology, October 28-13, Guilin, China
  15. (invited) Lining Zhang and Mansun Chan, “Compact Modeling Beyond Device Physics”, 2014 International Conference on Solid-State and Integrated Circuit Technology, October 28-13, Guilin, China
  16. (invited) Lining Zhang and Mansun Chan, “Developing a Post-Moore Collaborative Technology Platform for Emerging Device Deployment”, 2014 International Electron Devices and Materials Symposium, November 20-21, Hualin, Taiwan
  17. Lining Zhang and Mansun Chan (invited), “The Pathway to Develop an Industrial Standard Device Model: From Device Physics to Parameter Extraction”, 2014 IEEE Conference on Electron Devices and Solid-State Circuits (EDSSC 2014), June 18-20, 2014, Hong Kong
  18. Clarissa C. Prawoto, Muthupandian Cheralathan and Mansun Chan, “Influence of Fin-width Lateral Variations of a FinFET”, 2014 VLSI-TSA, April 28-30, 2014, Taiwan
  19. Markov, Stanislav and Aradi, Balint and Penazzi, Gabriele and Yam, Chi Young and Frauenheim, Thomas and Chen, GuanHua, “Towards Atomic Level Simulation of Electron Devices Including the Semiconductor-Oxide Interface”, 2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), pages 65--68, 2014, IEEE
  20. Vladimir Timoshevskii, Yibin Hu, Etienne Marcotte and Hong Guo, “Quantum transport modeling of the symmetric Fe/FeO0:5/MgO magnetic tunnel junction: the effects of correlations in the buffer layer”, J. Phys. Condens. Matter 26, 015002 (2014).
  21. Lei Zhang, Kui Gong, Jingzhe Chen, Lei Liu, Yu Zhu, Di Xiao and Hong Guo, “Generation and transport of valley polarized current in transition metal dichalcogenides”, Phys. Rev. B 90, 195428 (2014).
  22. L. L. Tao, D. P. Liu, S. H. Liang, X. F. Han and Hong Guo, “Tunneling magnetoresistance of FePt/NaCl/FePt(001)”, Euro. Phys. Lett. 105, 58003 (2014).
  23. Mathieu César, Dongping Liu, Daniel Gall and Hong Guo, “Calculated Resistances of Single Grain Boundaries in Copper”, Physical Review Applied, 2, 044007 (2014).
  24. Saraiva-Souza, Aldilene; Smeu, Manuel; Zhang, Lei; Souza Filho, Antonio; Guo, Hong; Ratner, Mark, “Molecular Spintronics: Destructive Quantum Interference Controlled by Gate”, JACS 136, 15065 (2014).
  25. M.G. Kibria, S. Zhao, F.A. Chowdhury, Q. Wang, H.P.T. Nguyen, M.L. Trudeau, Hong Guo and Z. Mi, “Tuning the surface Fermi level on p-type gallium nitride nanowires for efficient overall water splitting”, Nature Comm. 5:3825 (2014).
  26. Bruno V. C. Martins, Manuel Smeu, Lucian Livadaru, Hong Guo and Robert A. Wolkow, “Conductivity of Si(111)-(7 × 7): The Role of a Single Atomic Step”, Phys. Rev. Lett. 112, 246802 (2014).
  27. Kui Gong, Lei Zhang, Wei Ji and Hong Guo, “Electrical contacts to monolayer black phosphorus: A first-principles investigation”, Phys. Rev. B 90, 125441 (2014).
  28. Z.G. Chen, W.P. Wang, L.G. Liu, and B. Levy, Revisiting optimal Delaunay triangulation for 3D graded mesh generation, SIAM Journal on Scientific Computing, vol. 26. no. 3, (2014), 930-954.
  29. F. Li, J. Luo, W.P. Wang and Y. He. Autonomous deployment for load balancing k-surface coverage in sensor networks, IEEE Transactions on Wireless Communications, accepted and published online, 22 July 2014
  30. S.Q. He, Y.K. Choi, Y.W. Guo and W.P. Wang. Spectral analysis on medial axis of 2D shapes, Computer Graphics Forum, accepted and published online, 13 June, 2014
  31. Y.F. Li, Y. Liu, Y.K. Choi, and W.P. Wang, Planar hexagonal meshing for architecture, IEEE Transactions on Visualization and Computer Graphics, accepted in 2014 and published online
  32. M. Wang, B. Wang, Y. Fei, K. Qian, W.P. Wang, J. Chen, and J. Yong, Towards photo atercolorization with artistic verisimilitude, IEEE Transactions on Visualization and Computer Graphics, vol. 20. no. 10, (2014), 1451 – 1460
  33. Y.S. Zhu, F. Sun, Y.K. Choi, B. Juttler, W.P. Wang, Computing a compact spline representation of the medial axis transform of a 2D shape, Graphical Models, vol. 76, no. 5, (2014), 252-262
  34. Y.K. Choi, W.P. Wang, B. Mourrain, C.H. Tu, X.H. Jia, and F. Sun, Continuous collision detection for composite quadric models, Graphical Models, vol. 76, no. 5, (2014), 566-579
  35. Y.T. Hu, J Kautz, Y.Z, Yu, and W.P.Wang, Speaker-following video subtitles, ACM Transactions on Multimedia Computing, Communications and Applications, accepted in 2014
  36. C.Wang, J. Zhu, Y.W. Guo, and W.P.Wang, Video object co-segmentation via subspace clustering and quadratic pseudo-Boolean optimization in an MRF framework, IEEE Transactions on Multimedia, vol. 16, no. 4, (2014), 903-916
  37. Y. Fei, G.D. Rong, B. Wang, and W.P. Wang, “Parallel L-BFGS-B algorithm on GPU”, Computers & Graphics, vol. 40, (2014), 1-9
  38. Z.Q. Yu, L. Lu, Y.W. Guo, R.F. Fan, M.M. Liu, W.P. Wang, Content-aware photo collage using circle packing, IEEE Transactions on Visualization and Computer Graphics, vol. 20, no. 2, (2014), 182-195
  39. L.P. Zheng, J.M. Zhao, Y.J. Cheng, H.B. Chen, X.P. Liu, and W.P.Wang, “Geometry-constrained crowd formation animation”, Computers & Graphics, vol. 38, no. 2, (2014), 268-276.
  40. Y.W. Guo, G.P. Zhang, Z.L. Lan, and W.P. Wang, Efficient view manipulation for cuboid-structured images, Computers & Graphics, vol. 38, no. 2, (2014), 174-182.
  41. Edmund Y. Lam, “Computational imaging technology for nanolithography,” in The Japan Society of Applied Physics and The Optical Society Joint Symposia, pp. 17p-D5-10, September 2013.
  42. R.B. Wu, Y.Z. Yu, and W.P. Wang. SCaLE: Supervised and cascaded Laplacian eigenmaps for visual object recognition based on nearest neighbors, Proceedings of IEEE Conference on Computer Vision and Pattern Recognition (CVPR'13), Portland, June 2013.
  43. X.H. Zhu, Y. Gur, W.P. Wang, and T. Fletcher, Model selection and estimation of multi-compartment models in diffusion MRI with a Rician noise model, Proceedings of the 23rd Biennial International Conference on Information Processing in Medical Imaging (IPMI 2013), Asilomar CA, USA, June 2013.
  44. J.T. Chen, X.Y. Ge, L.Y. Wei, B. Wang, Y.S. Wang, H.M. Wang, Y. Fei, K.L. Qian, J.H. Yong, and W.P. Wang, Bilateral blue noise sampling, ACM Transactions on Graphics (SIGGRAPH Asia), vol. 3, no. 6, (2013).
  45. Z.Z. Kuang, B. Chan, L. Cao. Y.Z. Yu, and W.P. Wang, A compact random-access representation for urban modeling and rendering, ACM Transactions on Graphics (SIGGRAPH Asia), vol. 3, no. 6, (2013).
  46. R.B. Wu, Y.Z. Yu, and W.P. Wang, Optimized synthesis of art patterns and layered textures, accepted by IEEE Transactions on Visualization and Computer Graphics (2013).
  47. Z.C. Zhong, X.H. Guo. W.P. Wang, B. L_evy, F. Sun, Y. Liu, W.H. Mao, Particle-based anisotropic surface meshing, ACM Transactions on Graphics (SIGGRAPH 2013), vol. 32, no. 4, (2013).
  48. Y. Liu, H. Pan, J. Snyder, W.P. Wang, and B.N. Guo, Computing self-supporting surfaces by regular triangulation, ACM Transactions on Graphics (SIGGRAPH 2013), vol. 32, no. 4, (2013).
  49. C.M. Zhang, W.P. Wang, J.Y. Wang, and X.M. Li, Local computation of curve interpolation knots with quadratic precision, Computer-Aided Design, vol. 45, no. 4, (2013), 853-859.
  50. X.H. Jia, C.H. Tu and W.P. Wang, Topological classification of non-degenerate intersections of two ring tori, Computer Aided Geometric Design, vol. 30, no. 2, (2013), 181-198.
  51. P. Li, Li Jun Jiang, and H. Bagci, "A Field-Circuit Solver Hybridizing Discontinuous Galerkin Finite Element Time Domain Method and Modified Nodal Analysis*", 2013 ACES, Monterey, CA, Apr. 2013 (Best student paper candidate).
  52. Q. S. Liu, S. Sun, W. C. Chew, Y. G. Liu, and L. Jiang, "Eliminating magnetostatic nullspaces of MFIE Operator for toroidal surfaces with global loops", in Conference of Applied Computational Electromagnetics Society, March 24-28, 2013.
  53. X. Y. Xiong, L. J. Jiang, and W. Sha, "Solution of the Low Frequency EM problems through a novel Coulomb gauge EFIE", 2013 ACES, Monterey, CA, Apr. 2013 (Best student paper candidate).
  54. S. Sun, L. Jiang, and W. C. Chew, "Enhanced A-EFIE with Calderon multiplicative preconditioner", in IEEE Int. Symp. on Antennas and Propag., July, 2013.
  55. Q. S. Liu, S. Sun, and W. C. Chew, "Implementation of a simplified form of CMP-EFIE for low-frequency capacitive problems", in IEEE Int. Symp. on Antennas and Propag. (IEEE APS2013), July, 2013 (Best Student Paper Competition from 141 papers).
  56. Jia Li, Ningning Jia, and Edmund Y. Lam, "Hotspot-aware robust mask design with inverse lithography", in China Semiconductor Technology International Conference (CSTIC), March 2012. Published in ECS Transactions, vol. 44, no. 1, pp. 197–202, March 2012.
  57. S. H. Weng, Q. Chen, N. Wong and C. K. Cheng, "Circuit simulation using matrix exponential method for stiffness handling and parallel processing", in Proc. of IEEE Intl. Conf. on Computer-Aided Design (ICCAD), pp. 407-414, San Jose, Nov. 2012.
  58. Q. Chen, W. Schoenmaker, S. H.Weng, C. K. Cheng, G. H. Chen, L. J. Jiang and N. Wong, "A fast time-domain EM-TCAD coupled simulation framework via matrix exponential*", in Proc. of IEEE Intl. Conf. on Computer-Aided Design (ICCAD), pp. 422-428, San Jose, Nov. 2012 (Best Paper Award Candidate) (collaboration between Science and Engineering).
  59. Jun Z. Huang, Weng Cho Chew, Jie Peng, Chi-Yung Yam, Li Jun Jiang, and GuanHua Chen, "Full-quantum simulation of p-type junctionless transistors with multi-band k.p model*", Sumitted to 2013 IEEE International Conference of Electron Devices and Solid-State Circuits (EDSSC), Hong Kong, Jun. 3-5, 2013.
  60. Salahuddin Raju, C. Patrick Yue and Mansun Chan, "Predicting Key Parameters of Inductive Power Links", 10th International Workshop on Compact Modeling, January 22, 2013, Yokohama, Japan.
  61. Lining Zhang and Mansun Chan, "A DC Model of TFETs for SPICE Simulations", 10th International Workshop on Compact Modeling, January 22, 2013, Yokohama, Japan.
  62. Lining Zhang, Jin He and Mansun Chan, "A Compact Model for Double-Gate Tunneling Field-Effect-Transistors and Its Implications on Circuit Behaviors*", 2012 IEEE International Electron Device Meeting (IEDM), Dec. 10-13, 2012, San Francisco, USA.
  63. Salahuddin Raju, Rongxiang Wu, Mansun Chan and C. Patrick Yue, "Modeling of Mutual Inductance for Planar Inductors Used in Inductive Link Applications", 2012 IEEE Conference on Electron Devices and Solid-State Circuits, December 3-5, 2012, Bangkok, Thailand.
  64. Hao Wang and Mansun Chan (invited), "i-MOS: A Platform for Compact Modeling Sharing", 2012 Nanotechnology Conference and Trade Show, pp. 837-840, June 18-21, 2012, Santa Clara, USA.
  65. Wei Bian, Jiaojiao Xu, Chenyue Ma, Xiufang Zhang, Wen Wu, Wenping Wang, Jin He and Mansun Chan, "Vertical Non-uniformity Effect on FinFET Performance Characteristics*", 9th International Workshop on Compact Modeling, January 30, 2012, Sydney, Australia.
  66. Lining Zhang, Jin He and Mansun Chan, "Predicting Key Features of Double-Gate Tunnel FETs*", 9th International Workshop on Compact Modeling, January 30, 2012, Sydney, Australia (Collaboration between AoE team and oversea partners).
  67. Hao Wang, Lining Zhang, Wei Bian, Ka Chun Cyrix Tam, Zubair Ahmed, Xiaoxu Cheng, Hamza Zia, Jin He and Mansun Chan, "i-MOS.org - interactive Modeling and Online Simulation platform for compact modeling", 9th International Workshop on Compact Modeling, January 30, 2012, Sydney, Australia.
  68. G. Li, Q. Dong, C. W. Leung, P. W. T. Pong, W. Y. Wong, and P. T. Lai, "Micro- and Nano- Structured FePt Patterned by Direct Imprint Lithography", 38th International Micro & Nano Engineering Conference (MNE2012), Toulouse, France, Sep 2012.
  69. X. Sun, L. Jiang, and P. W. T. Pong, "Magnetic Flux Concentration at Micrometer Scale", 38th International Micro & Nano Engineering Conference (MNE2012), Toulouse, France, Sep 2012.
  70. Jun Z. Huang, Weng Cho Chew, Min Tang, Lijun Jiang, and Wen-Yan Yin, "Fast three dimensional simulation of silicon nanowire transistors with asymptotic waveform evaluation", in the 28th International Review of Progress in Applied Computational Electromagnetics, Columbus, Ohio, USA, 2012.
  71. W.J. Yu, Q. Chen, L.J. Jiang, and N. Wong, "Efficient variation-aware EM-semiconductor coupled solver for the TSV structures in 3D IC*", Design, Automation & Test in Europe Conference & Exhibition, Mar. 2012.
  72. Y.P. Chen, W.C. Chew, W.E. Sha, W.C. Choy, and L.J. Jiang, "Integral equation method for analyzing purcell effect in plasmonic system*", IEEE International Symposium on APSURSI, Chicago, IL, Jul. 2012.
  73. S. Sun, W. C. Chew, Y. G. Liu, and Z. Ma, "Perturbation method for low-frequency calderon multiplicative preconditioned EFIE", in the Conference of Applied Computational Electromagnetics Society (ACES2012), April, 2012.
  74. Q. S. Liu, S. Sun, and W. C. Chew, "Low-frequency CMP-EFIE with perturbation method for open capacitive problems", in IEEE Int. Symp. on Antennas and Propag. (IEEE APS2012), July, 2012.
  75. Salahuddin Raju, Rongxiang Wu, C. Patrick Yue, Johnny K.O. Sin and Mansun Chan, "A Novel On-Chip Inductive Power Link for Medical Implant", IEEE Student Symposium on Electron Devices and Solid-State Circuits, December 15, 2011, Hong Kong
  76. Lining Zhang and Mansun Chan (best paper award), "Statistic Variations in Vertically Stacked Silicon", IEEE Student Symposium on Electron Devices and Solid-State Circuits, December 15, 2011, Hong Kong.
  77. Lin Li, Lining Zhang, Jin He and Mansun Chan, "Phase-Change Memory on Thin-Film-Transistor Technology*", 2011 IEEE International Semiconductor Device Research Symposium, December 7-9, 2011, Maryland, USA.
  78. K. C. Kwong, Philip K. T. Mok and Mansun Chan (invited), "A Phase-Change Random Access Memory Model for Circuit Simulation", 2011 Nanotechnology Conference and Trade Show, vol. 2, pp. 756-761, June 13-16, 2011, Boston, USA.
  79. Lining Zhang, Mansun Chan and Frank He, “The Impact of Device Parameter Variation on Double Gate Tunneling FET and Double Gate MOSFET”, 2010 IEEE Conference on Electron Devices and Solid-State Circuits, December 15-17, 2010, Hong Kong.

  80. Yuanzhe Xu, Quan Chen, Lijun Jiang, Ngai Wong, “Process-variation-aware electromagnetic- semiconductor coupled simulation,” accepted by Circuits and Systems (ISCAS), 2011.

  81. S.H. Lo, H. Borouchaki and P. Laug, “Automatic decomposition of discretized surfaces for parallel processing”, PARENG2O 11: The Second International Conference on Parallel, Distributed, Grid and Cloud Computing for Engineering to be held in Ajaccio, Corsica, France, 12-15 April 2011.

  82. Zu-Hui MA, Li-Jun JIANG, Zhi-Guo QIAN, Mao-Kun LI, and Weng Cho CHEW, “Solving Low Frequency Electromagnetic Problems With EPA And A-EFIE”, 2010 AP-RASC.

  83. Edmund Y. Lam, “Regularization in inverse lithography: Enhancing manufacturability and robustness to process variations,” in China Semiconductor Technology International Conference (CSTIC), March 2010. Published in ECS Transactions, Vol. 27, No. 1, pp. 427-432, March 2010.

  84. Zhi-Guo Qian, Mao-Kun Li, Zu-Hui Ma, Li-Jun Jiang, Weng Cho Chew, “Solving multi-scale low frequency electromagnetic problems”, EuCAP2010, April 2010.

  85. Ningning Jia and Edmund Y. Lam, “Performance analysis of pixelated source-mask optimization for optical microlithography,” in IEEE International Conference on Electron Devices and Solid-State Circuits, December 2010.

  86. Lining Zhang, Mansun Chan and Frank He, “The Impact of Device Parameter Variation on Double Gate Tunneling FET and Double Gate MOSFET”, Accepted for presentation in the 2010 IEEE International Conference on Electronic Device and Solid-State Circuits, December 15-17, Hong Kong.

  87. Ningning Jia and Edmund Y. Lam, “Stochastic gradient descent for robust inverse photomask synthesis in optical lithography,” in IEEE International Conference on Image Processing, pp. 4173-4176, September 2010.

  88. Yijiang Shen, Ngai Wong, and Edmund Y. Lam, “Aberration-aware robust mask design with level-set-based inverse lithography,” in Photomask and Next-Generation Lithography Mask Technology, volume 7748 of Proceedings of the SPIE, pp. 77481U, April 2010.

  89. Y. P. Chen, J. L. Xiong, and W. C. Chew, “Fast and Broadband Simulation of Large-scale Microstrip Structures,” Progress in Electromagnetics Research Symposium, 2010, Xi’an, China.

  90. Yang G. Liu, Weng Cho Chew, Li Jun Jiang and Zhi Guo Qian, “A memory saving vector fast multipole algorithm for solving the augmented EFIE (invited)”, pp. 140-143, URSI Commission B International Symposium on Electromagnetic Theory, August, 2010.

  91. Yang G. Liu and Weng Cho Chew, “A vector fast multipole algorithm for low frequency problems”, pp. 728-731, URSI Commission B International Symposium on Electromagnetic Theory, August, 2010.

Page Top

Journal papers:

  1. Y. P. Chen, L. Jiang, S. Sun, and W. C. Chew, "Calderon preconditioned PMCHWT equations for analyzing penetrable objects in layered medium," IEEE Transactions on Antennas and Propagation, vol. 62, no. 11, pp. 5619-5627, Nov. 2014.

  2. Q. S. Liu, S. Sun, and W. C. Chew, "Convergence of low-frequency EFIE-based systems with weighted right-hand-side effect," IEEE Transactions on Antennas and Propagation, vol.62, no.10, pp. 5108-5116, Oct. 2014.

  3. Y. L. Li and S. Sun, "Full-wave semi-analytical modeling of planar spiral inductors in layered media," Progress in Electromagnetic Research (PIER), vol. 149, page 45-54, 2014.

  4. Y. P. Chen, S. Sun, L. Jiang, and W. C. Chew, "Calderon preconditioner for the electric field integral equation with layered medium Green's function," IEEE Transactions on Antennas and Propagation, vol.62, no.4, pp. 2022-2030, Apr. 2014

  5. P. Li, L.J. Jiang, and H. Bagci, “Co-Simulation of Electromagnetics-Circuit Systems Exploiting DGTD and MNA,” IEEE Trans. on CPMT, vol. 4, no. 6, pp. 1052-1061, Jun. 2014.

  6. X.Y. Xiong, W. Sha, and L.J. Jiang, “Helmholtz Decomposition Based on Integral Equation Method for Electromagnetic Analysis,” Microw. and Opt. Techn. Lett.,vol. 56, iss. 8, pp 1838 - 1843, Aug. 2014.

  7. P. Li, Y.F. Shi, L.J. Jiang, H. Bagci, “A Hybrid Time-Domain Discontinuous Galerkin-Boundary Integral Method for Electromagnetic Scattering Analysis,” IEEE Trans. on Ant. & Propag., vol. 62, no. 5, May 2014.

  8. P. Li and L.J. Jiang, “A Rigorous approach for the radiated emission characterization based on the spherical magnetic field scanning,” IEEE Trans. on EMC, vol. 56, no. 3, pp.683-690, Jun. 2014.

  9. J. Huang, L.N. Zhang, W.C. Chew, C.Y. Yam, L.J. Jiang, G.H. Chen, and M.S. Chan, “Model order reduction for quantum transport simulation of band-to-band tunneling devices*,” IEEE Trans. on Electronic Devices, vol. 61, no. 2, pp. 561-568, Feb. 2014.

  10. Wei E.I. Sha, Xuanhua Li, and Wallace C.H. Choy, “Breaking the Space Charge Limit in Organic Solar Cells by a Novel Plasmonic-Electrical Concept,” Nature Publishing Group, Scientific Reports, vol. 4, pp. 6236, Aug. 2014.
  11. Wei E.I. Sha, Ling Ling Meng, Wallace C.H. Choy, and Weng Cho Chew, “Observing Abnormally Large Group Velocity at the Plasmonic Band Edge via a Universal Eigenvalue Analysis,” OSA, Optics Letters, vol. 39, no. 1, pp. 158-161, Jan. 2014.
  12. W.C. Chew, “Vector Potential Electromagnetics with Generalized Gauge for Inhomogeneous Media: Formulation,” Progress In Electromagnetics Research, Vol. 149, 69-84, 2014.

  13. P. R. Atkins, W. C. Chew, M. K. Li, L. E. Sun, Z. H. Ma, and L. J. Jiang, “Casimir Force for Complex Objects Using Domain Decomposition Techniques,” Progress In Electromagnetics Research, Vol. 149, 275–280, 2014.

  14. Changjian Zhou, A. A. Vyas, P. Wilhite, P. Wang, Mansun Chan and Cary Y. Yang, “Resistance Determination for Sub-100nm Carbon Nanotube Vias”, accepted for publication in IEEE Electron Device Letters

  15. G.M. Tang, F.M. Xu, and J. Wang, “Waiting time distribution of quantum electronic transport in the transient regime”, Phys. Rev. B 89, 205310 (2014).

  16. F.M. Xu and J. Wang, “Statistical properties of electrochemical capacitance in disordered mesoscopic capacitors”, Phys. Rev. B 89, 245430 (2014).

  17. J. Liu, J. Wang, F.C. Zhang, “Controllable nonlocal transport of Majorana fermions with the aid of two quantum dots*”, Phys. Rev. B 90, 035307 (2014).

  18. Y.J. Yu, H.X. Zhan, Y.D. Wei, and J. Wang, “Current-conserving and gauge-invariant quantum ac transport theory in the presence of phonon”, Phys. Rev. B 90, 075407 (2014).

  19. Z.Z. Yu, L. Zhang, Y.X. Xing, and J. Wang, “Investigation of transient heat current from first principles using complex absorbing potential”, Phys. Rev. B 90, 115428 (2014).

  20. F. Liu , Y.J. Wang , X.Y. Liu , J. Wang, and H. Guo, “Ballistic transport in Monolayer Black Phosphorus Transistors”, IEEE Transactions on Electron Devices 61, 3871 (2014).
  21. G.M. Tang and J. Wang, “Full-counting statistics of charge and spin transport in the transient regime: A nonequilibrium Green’s function approach”, Phys. Rev. B 90, 195422 (2014).
  22. M. Yang and J. Wang, “Fabry–Pérot states mediated quantum valley–Hall conductance in a strained graphene system”, New. J of Phys. 16, 113060 (2014).

  23. Xiaofei Wu, Shiyuan Liu, Jia Li, and Edmund Y. Lam, “Efficient source mask optimization with Zernike polynomial functions for source representation,” Optics Express, vol. 22, no. 4, pp. 3924–3937, February 2014

  24. Jia Li and Edmund Y. Lam, “Robust source and mask optimization compensating for mask topography effects in computational lithography,” Optics Express, vol. 22, no. 8, pp. 9471–9485, April 2014
  25. Wen Lv, Edmund Y. Lam, Haiqing Wei, and Shiyuan Liu, “Cascadic multigrid algorithm for robust inverse mask synthesis in optical lithography,” Journal of Micro/Nanolithography, MEMS, and MOEMS, vol. 13, no. 2, pp. 023003, April 2014.
  26. Xiaofei Wu, Shiyuan Liu, Wen Lv, and Edmund Y. Lam, “Robust and efficient inverse mask synthesis with basis function representation,” Journal of the Optical Society of America A, vol. 31, no. 12, pp. B1–B9, December 2014.
  27. Wen Lv, Shiyuan Liu, Xiaofei Wu, and Edmund Y. Lam, “Illumination source optimization in optical lithography via derivative-free optimization,” Journal of the Optical Society of America A, vol. 31, no. 12, pp. B19–B26, December 2014.
  28. Lin Li, Bao-Bing Zheng, Wei-Qiang Chen, Hua Chen, Hong-Gang Luo, and Fu-Chun Zhang, “0−π transition characteristic of the Josephson current in a carbon nanotube quantum dot”, Phys. Rev. B 89, 245135 (2014).
  29. Yong Wang, Fu-Chun Zhang, “Momentum-resolved electronic relaxation dynamics in d-wave superconductors”, Phys. Rev. B, 89, 094519 (2014).
  30. Yong Wang, Wei-qiang Chen, Fu-Chun Zhang, “Dynamics of the order parameter in a photoexcited Peierls chain”, Phys. Rev. B, 90, 205110 (2014).
  31. Yan Zhou, M. Ezawa, “A reversible conversion between a skyrmion and a domain-wall pair in junction geometry”, Nature Communications, 5, 4652 (2014).
  32. Qing Lin He, Hongchao Liu, Mingquan He, Ying Hoi Lai, Hongtao He, Gan Wang, Kam Tuen Law, Rolf Lortz, Jiannong Wang and Iam Keong Sou, “Two-dimensional superconductivity at the interface of a Bi2Te3/FeTe heterostructures” Nature Communications, 5, 4247 (2014)
  33. H.T.He, G.Wang, H.C.Liu, T.Zhang, K.T.Law, I.K.Sou, and J.N.Wang, “Spontaneous vortex dynamics in superconducting FeTe thin films” Solid State Communications, 195, 35–38 (2014)
  34. C. L. Cao, Y. Zhou, L. Jiang, and P. W. T. Pong. “Injection Locking of Spin-Torque Nano-Oscillators”. IEEE Transactions on Magnetics, vol. 50, 1401503 (2014).
  35. T. Zeng, Y. Zhou, C. W. Leung, Peter P. T. Lai, and Philip W. T. Pong. “Capacitance Effect on the Oscillation and Switching Characteristics of Spin Torque Oscillators”. Nanoscale Research Letters, vol. 9, 597 (2014)
  36. S.G. Chen, Y. Zhang, S. K. Koo, H. Tian, C. Y. Yam, G.H. Chen, M. A. Ratner, "Interference and Molecular Transport—A Dynamical View: Time-Dependent Analysis of Disubstituted Benzenes*",J. Phys. Chem. Lett., 5 (15), 2748–2752 (2014).
  37. Y. Zhang, L.Y. Meng, C. Y. Yam, G.H. Chen,"Quantum-Mechanical Prediction of Nanoscale Photovoltaics", J. Phys. Chem. Lett., 5, 1272−1277 (2014).
  38. Yin Wang, Zhizhou Yu, Ferdows Zahid, Lei Liu, Yu Zhu, Jian Wang and Hong Guo, “Direct tunneling through high-κ amorphous HfO2: Effects of chemical modification*”, J. Appl. Phys., 116, 023703 (2014).
  39. Lei Zhang, Jianing Zhuang, Yanxia Xing, Jian Li, Jian Wang and Hong Guo, “Universal transport properties of three-dimensional topological insulator nanowires*”, Phys. Rev. B 89, 245107 (2014).
  40. Kui Gong, Lei Zhang, Dongping Liu, Lei Liu, Yu Zhu, Yonghong Zhao and Hong Guo, “Electric control of spin in monolayer WSe2 field effect transistors”, Nanotechnology, 25, 435201 (2014).
  41. Li Cao, Siu Kong Koo, Jian Sun, Wenping Wang, “Space Aware Carbon Nano Tube Parameters Design*”, Journal of Information and Computational Science, 2014, Vol. 11 (15) : 5279- 5287
  42. Stanislav Markov, Balint Aradi, ChiYung Yam, Hang Xie, Thomas Frauenheim, and GuanHua Chen, “Atomic level modeling of extremely thin silicon-on-insulator MOSFETs including the silicon dioxide – Electronic Structure*”, IEEE Transactions on Electron Devices, accepted 18 Dec 2014.

  43. V.P. Georgiev, S. Markov, L. Vila-Nadal, C. Busche, L. Cronin, A. Asenov, “Optimization and Evaluation of Variability in the Programming Window of a Flash Cell With Molecular Metal–Oxide Storage” IEEE Transactions on Electron Devices, Vol 61/6,  pp.2019--2026, 2014

  44. Quan Chen, Jun Li, Chiyung Yam, Yu Zhang, Ngai Wong, Guanhua Chen, "An Approximate Framework for Quantum Transport Calculation with Model Order Reduction", submitted to Journal of Computational Physics, Nov 2014.
  45. Yu Zhang, ChiYung Yam and GuanHua Chen, "Dissipative time-dependent quantum transport theory: quantum interference and phonon induced decoherence dynamics", submitted on Dec 18, 2014.
  46. Hang Xie, YanHo Kwok, Feng Jiang, Xiao Zheng and GuanHua Chen, "Complex absorbing potential based Lorentzian fitting scheme and time dependent quantum transport", Journal of Chemical Physics, 141, 164122, (2014).
  47. C.M. Huang, S.F. Wu, A.M. Sanchez, J.J.P. Peters, R. Beanland, J.S. Ross, P. Rivera, W. Yao, D. Cobden, X.D. Xu, "Lateral heterojunctions within monolayer MoSe2-WSe2 semiconductors new", Nature Materials, Vol.13, 1096-1101, 2014
  48. R.L. Chu, X. Li, S.F. Wu, Q. Niu, W. Yao, X.D. Xu, C.W. Zhang, "Valley-splitting and valley-dependent inter-Landau-level optical transitions in monolayer MoS2 quantum Hall systems", Physical Review B, Vol.90, 045427:1-5, 2014
  49. H.Y. Yu, Y. Wu, G.B. Liu, X.D. Xu, W. Yao, "Nonlinear Valley and Spin Currents from Fermi Pocket Anisotropy in 2D Crystals", Physical Review Letters, Vol.113, 156603:1-5, 2014
  50. T. Zeng, Y. Zhou, K.W. Lin, P.T. Lai, P.W.T. Pong, "Magnetic-field-sensing mechanism based on dual-vortex motion and magnetic noise", Journal of Applied Physics, Vol.115, 17D142:1-3, 2014
  51. X.D. Xu, W. Yao, D. Xiao, T.F. Heinz, “Spin and pseudospins in layered transition metal dichalcogenides”, Nature Physics, Vol.10, 343-350, 2014.
  52. T. Zeng, Y. Zhou, K.W. Lin, P.T. Lai, and P.W.T. Pong, “Thermally Excited Mag-Noise in Ferromagnetic Ring Structures”, IEEE Transactions on Magnetics, 50, 2300304, 2014.
  53. T. Zeng, Y. Zhou, J. Akerman, P.T. Lai, P.W.T. Pong, “Linear Phase Tuning of Spin Torque Oscillators Using In-Plane Microwave Fields”, IEEE Transactions on Magnetics, Vol.50, 1400104:1-4, 2014.
  54. Salahuddin Raju, Rongxiang Wu, Mansun Chan and C. Patrick Yue, “Modeling of Mutual Coupling between Planar Inductors in Wireless Power Applications”, IEEE Transactions on Power Electronics, 29, 481-490, 2014.
  55. Jason S. Ross, Philip Klement, Aaron M. Jones, Nirmal J. Ghimire, Jiaqiang Yan, D. G. Mandrus, Takashi Taniguchi, Kenji Watanabe, Kenji Kitamura, Wang Yao, David H. Cobden and Xiaodong Xu, "Electrically tunable excitonic light-emitting diodes based on monolayer WSe2 p–n junctions", Nature Nanotechnology, 9 March 2014.
  56. P. Li and L.J. Jiang, “Simulation of electromagnetic waves in the magnetized cold plasma by a DGFETD method,” IEEE AWPL, vol. 12, pp. 1244-1247, Sept. 2013.
  57. A. De Hoop, L.L. Meng, and L.J. Jiang, “Pulsed line source response of a thin sheet with high-contrast dielectric and conductive properties – a time-domain analysis,” IEEE. Trans. on Ant. & Propag., pp. 5649-5657, Nov. 2013.
  58. P. Li and L.J. Jiang, “Modeling radiated emissions through shielding boxes based on tangential electrical field samplings over openings,” IEEE Trans. on EMC, vol. 55, no. 6, pp. 1244-1247, Dec. 2013.
  59. Z.H. Ma, L.J. Jiang, and W.C. Chew, “Loop-tree free augmented equivalence principle algorithm for low frequency problems”, Microw. and Opt. Techn. Lett., vol. 55, no. 10, pp. 2475-2479, Oct. 2013.
  60. Y.M. Wu, L.J. Jiang, W. Sha, and W.C. Chew, “The numerical steepest descent path method for calculating physical optics integrals on smooth conducting quadratic surfaces,” IEEE. Trans. on Ant. & Propag., vol. 61, no. 8, pp. 4183-4193, Aug. 2013.
  61. X.Y. Xiong, L.J. Jiang, W. Sha, and Y.H. Lo, “A new EFIE method based on Coulomb gauge for the low-frequency electromagnetic analysis,” Progress In Electromagnetics Research, vol. 140, pp. 613-631, Jun. 2013.
  62. Phillip R. Atkins, Qi I. Dai, Wei E.I. Sha, and Weng Cho Chew, “Casimir Force for Arbitrary Objects Using the Argument Principle and Boundary Element Methods,” Progress In Electromagnetics Research, vol. 142, pp. 615-624, Sep. 2013.
  63. Wen Lv, Shiyuan Liu, Qi Xia, Xiaofei Wu, Yijiang Shen, and Edmund Y. Lam, “Level-set-based inverse lithography for mask synthesis using the conjugate gradient and an optimal time step,” Journal of Vacuum Science and Technology B, vol. 31, no. 4, pp. 041605, July 2013.
  64. Z Gong, GB Liu, H Yu, D Xiao, X Cui, X Xu, W Yao, “Magnetoelectric effects and valley-controlled spin quantum gates in transition metal dichalcogenide bilayers*”, Nature communications, 4, 2053 (2013).
  65. Jie Yuan, Dong-Hui Xu, Hao Wang, Yi Zhou, Jin-Hua Gao, and Fu-Chun Zhang, “Possible half-metallic phase in bilayer graphene: Calculations based on mean-field theory applied to a two-layer Hubbard model”, Phys. Rev. B 88, 201109(R) (2013).
  66. Yan Zhou, HuJun Jiao, Yan-ting Chen, Gerrit E. W. Bauer, Jiang Xiao “Current-induced spin-wave excitation in Pt/YIG bilayer” Phys. Rev. B, 88, 184403 (2013).
  67. L.Y. Meng, Z.Y. Yin, C. Y. Yam, S. K. Koo, Q. Chen, N. Wong, G.H. Chen, "Frequency-domain multiscale quantum mechanics/electromagnetics simulation method*", J. Chem. Phys. 139, 244111 (2013).
  68. Y. H. Kwok, H. Xie, C. Y. Yam, X. Zheng, G.H. Chen, "Time-dependent density functional theory quantum transport simulation in non-orthogonal basis", J. Chem. Phys. 139, 224111 (2013).
  69. H. Xie, Y. H. Kwok, Y. Zhang, F. Jiang, X. Zheng, Y.J. Yan, G.H. Chen, "Time-dependent quantum transport theory and its applications to graphene nanoribbons", Phys. Status Solidi B, 250: 2481–2494, (2013).
  70. H. Tian, G.H. Chen, "Application of hierarchical equations of motion (HEOM) to time dependent quantum transport at zero and finite temperatures", Eur. Phys. J. B, 86: 411, (2013).
  71. Q. Chen, W. Schoenmaker, G.H. Chen, L.J. Jiang, N. Wong, "A Numerically Efficient Formulation for Time-Domain Electromagnetic-Semiconductor Cosimulation for Fast-Transient Systems*", IEEE Trans. on CAD of IC and Sys. Vol. 32, No. 5, 802-806 (2013).
  72. Ferdows Zahid, Lei Liu, Yu Zhu, Jian Wang, and Hong Guo, “A generic tight-binding model for monolayer, bilayer and bulk MoS2”, AIP Advances 3, 052111, 2013.
  73. Y. Wang, F. Zahid, Y. Zhu, L. Liu, J. Wang, and H. Guo, “Band offset of GaAs/AlxGa1-xAs heterojunctions from atomistic first principles*”, Applied Physics Letters 102, 132109, 2013.
  74. Yong Wang, Yan Zhou, and Fu-Chun Zhang, “Influence of Quantum and Thermal Noise on Spin-Torque-Driven Magnetization Switching”, Applied Physics Letters 103, 022403, 2013.
  75. Chi Yung Yam, Jie Peng, Quan Chen, Stanislav Markov, Jun Huang, Ngai Wong, Weng Cho Chew, and GuanHua Chen, “A Multi-Scale Modeling of Junctionless Field-Effect Transistors”, Applied Physics Letters, 103, 062109, 2013.
  76. Jian Qiao Zhang, Zhen Yu Yin, Xiao Zheng, Chi Yung Yam, and Gua Hua Chen, “Gauge-invariant and current-continuous microscopic ac quantum transport theory”, European Physical Journal B, 86: 423, 2013.
  77. Yong Wang and Fu-Chun Zhang, “Optimal Control of Stochastic Magnetization Dynamics by Spin Current”, Europhysics Letters, 102 47001, 2013.
  78. P. Li and L.J. Jiang, “A Hybrid Electromagnetics-Circuit Simulation Method Exploiting Discontinuous Galerkin Finite Element Time Domain Method”, IEEE Microwave and Wireless Components Letters, vol. 23, no. 3, pp. 113- 115, 2013.
  79. Lining Zhang, Ferdows Zahid, Yu Zhu, Lei Liu, Jian Wang, Hong Guo, Philip Chan, Mansun Chan, “First Principles Simulations of Nanoscale Silicon Devices with Uniaxial Strain*”, IEEE Transactions of Electron Devices, 60, 3527-3533, 2013.
  80. Lap K. Yeung and Ke-Li Wu, “PEEC Modeling of Radiation Problems for Microstrip Structures”, IEEE Transactions on Antennas And Propagation, 61, 3648-3655, 2013.
  81. S. Sun, Y. G. Liu, W. C. Chew, and Z. Ma, “Calderon multiplicative preconditioned EFIE with perturbation method”, IEEE Transactions on Antennas and Propagation, vol. 61, no. 1, pp. 247-255, 2013.
  82. Y.H. Lo, L.J. Jiang, and W.C. Chew, “Finite-width Feed and Load Models”, IEEE Transactions on Antennas and Propagation, vol. 61, no. 1, pp. 281-289, 2013.
  83. Q. Chen, W. Schoenmaker, G. Chen, L. Jiang and N. Wong, “A numerically efficient formulation for time-domain electromagnetic-semiconductor co-simulation for fast-transient systems*”, IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems (TCAD), vol. 32, no. 5, pp. 802-806, 2013.
  84. P. Li and L.J. Jiang, “Source Reconstruction Method Based Radiated Emission Characterization for PCBs”, IEEE Transactions on Electromagnetic Compatibility, 55, 933-940, 2013.
  85. J. Z. Huag, W.C. Chew, J. Peng, C.Y. Yam, L.J. Jiang, and G.H. Chen, “Model order reduction for multiband quantum transport simulations and its application to p-type junctionless transistors*”, IEEE Transactions on Electronic Devices, 60, pp.2111-2119, 2013.
  86. P. Li and L.J. Jiang, “Integration of arbitrary lumped multiport circuit networks into the discontinuous Galerkin time-domain analysis”, IEEE Transactions on Microwave Theory and Techniques, 61, 2525-2534, 2013.
  87. Shuguang Chen, Hang Xie, Yu Zhang and Guan Hua Chen, “Time-dependent quantum transport through an array of quantum dots”, Nanoscale 5, no. 1 (2013): 169–173, 2013.
  88. Z. Gong, G. Liu, H. Yu, D. Xiao, X. Cui, X. Xu & W. Yao, “Magnetoelectric effects and valley controlled spin quantum gates in transition metal dichalcogenide bilayers*”, Nature Communications 4: 2053, 2013.
  89. X.Y. Xiong, L.J. Jiang, V. A. Markel, and I. Tsukerman, “Surface waves in three-dimensional electromagnetic composites and their effect on homogenization*”, Optics Express, Vol. 21, Iss. 9, pp. 10412-10421, 2013.
  90. Yan Zhou, Jiang Xiao, Gerrit E. W. Bauer, and F.C. Zhang, “Field-free synthetic-ferromagnet spin torque oscillator*”, Physical Review B 87, 020409(R), 2013.
  91. Yu Zhang, Shuguang Chen, and Guanhua Chen, “First-principles Time-dependent Quantum Transport Theory”, Physical Review B 87, 085110, 2013.
  92. Feng Lu, Wei-Hua Wang, Xinjian Xie, and Fu-Chun Zhang, “Correlation effects in the electronic structure of the Ni-based superconducting KNi2S2*”, Physical Review B 87, 115131, 2013.
  93. Yong Wang, Hao Wang, Jinhua Gao, and Fu-Chun Zhang, “Layer Antiferromagnetic State in Bilayer Graphene: A First-Principles Investigation”, Physical Review B 87, 195413, 2013.
  94. Jie Liu, Fu-Chun Zhang, K. T. Law, “Majorana Fermion Induced Non-local Current Correlations in Spin-orbit Coupled Superconducting Wires*”, Physical Review B 88, 064509, 2013.
  95. Z.H. Ma, W.C. Chew, and L.J. Jiang, “A novel fast solver for Poisson’s equation with the Neumann boundary condition”, Progress In Electromagnetics Research, Vol. 136, 195-209, 2013.
  96. H. Zeng, G. Liu, J. Dai, Y. Yan, B. Zhu, R. He, Lu Xie, S. Xu, X. Chen, W. Yao & X. Cui, “Optical signature of symmetry variations and spin-valley coupling in atomically thin tungsten dichalcogenides*”, Scientific Reports 3, 1608, 2013.
  97. Jian Xu, Hou-Dao Zhang, Rui-Xue Xu, and Yijing Yan, “Correlated driving and dissipation in two-dimensional spectroscopy”, The Journal of Chemical Physics 138, 024106, 2013.
  98. Yu Zhang, Chi Yung Yam, and Guanhua Chen, “Dissipative Time-dependent Quantum Transport Theory”, The Journal of Chemical Physics 138, no. 16 (April 26, 2013): 164121, 2013.
  99. W.C. Chew and L.J. Jiang, “Overview of Large Scale Computing: Past, Present, and Future”, The Proceedings of IEEE, vol. 101, no. 2, pp. 227-241, 2013.
  100. C.Y. Yam, Q. Zhang, F. Wang and G.H. Chen, “Linear-scaling quantum mechanical methods for excited states”, Chemical Society Reviews, 41, 3821, 2012.
  101. Q.I. Dai, W.C. Chew, Y.H. Lo, Y.G. Liu, and L.J. Jiang, “Generalized modal expansion of electromagnetic field in 2-D bounded and unbounded media”, IEEE Antennas and Wireless Propagation Letters, Vol 11, p1052-1055, 2012.
  102. Lin Li, Lining Zhang, Xinnan Lin, Jin He, Chi On Chui and Mansun Chan, “Phase-Change Memory with Multifin Thin-Film-Transistor Driver Technology*”, IEEE Electron Device Letters, Vol. 33, No. 3, pp. 405-407, 2012.
  103. Y.P. Chen, W.C. Chew, and L.J. Jiang, “A New Green’s Function Formulation for Modeling Homogeneous Objects in Layered Medium”, IEEE Transactions on Antennas and Propagations, vol 60, issue 10, p4766-4776, 2012.
  104. Lining Zhang, Xinnan Lin, Jin He and Mansun Chan, “An analytical Charge Model for Double-Gate Tunnel-FET*”, IEEE Transactions on Electron Devices, Vol. 59, Issue: 12, p3217-3223, 2012.
  105. J. Z. Huang, W.C. Chew, M. Tang, and L.J. Jiang, “Efficient Simulation and Analysis of Quantum Ballistic Transport in Nanodevices with Asymptotic Waveform Evaluation (AWE)”, IEEE Transactions on Electron Devices, vol. 59, no. 2, pp 468-476, 2012.
  106. T. Zeng, Y. Zhou, K.W. Lin, P.T. Lai, and P.W.T. Pong, “Edge Effect on Thermally Excited Mag-Noise in Magnetic Tunnel Junction Sensors*”, IEEE Transactions on Magnetics, 48, 2831, 2012.
  107. J. Z. Huang, W.C. Chew, Y.M. Wu, and L.J. Jiang, “Methods for fast evaluation of self-energy matrices in tight-binding modeling of electron transport systems”, Journal of Applied Physics 112, 013711, 2012.
  108. Duo Li, Maozhi Li, Ferdows Zahid, Jian Wang and Hong Guo, “Oxygen Vacancy Filament Formation in TiO2: a Kinetic Monte Carlo Study*”, Journal of Applied Physics 112, 073512, 2012.
  109. L.Y. Meng, C.Y. Yam, S.K. Koo, Q. Chen, N. Wong and G.H. Chen, “Dynamic Multiscale Quantum Mechanics/Electromagnetics Simulation Method”, Journal of Chemical Theory and Computation, 8, 1190, 2012.
  110. H. Zeng, J. Dai, W. Yao, D. Xiao, and X.D. Cui, “Valley polarization in MoS2 monolayers by optical pumping*”, Nature Nanotechnology 7, 490, 2012.
  111. Y. P. Chen, W. E. I. Sha, W. C. H. Choy, L. Jiang, and W. C. Chew, “Study on spontaneous emission in complex multilayered plasmonic system via surface integral equation approach with layered medium Green’s function*”, Optics Express, Vol. 20, Issue 18, pp.20210-20221, 2012.
  112. Jia Li, Yijiang Shen, and Edmund Y. Lam, “Hotspot-aware fast source and mask optimization”, Optics Express, vol. 20, no. 19, pp. 21792–21804, 2012.
  113. S.K. Koo, C.Y. Yam, X. Zheng and G.H. Chen, “First-principles Liouville-von Neumann equation for open systems and its applications”, Physica Status Solidi B, 249, 270, 2012.
  114. D. Li, L. Zhang, F.M. Xu, and J. Wang, “Enhancement of shot noise due to the fluctuation of Coulomb interaction”, Physical Review B 85, 165402, 2012.
  115. Yin Wang, Ferdows Zahid, Jian Wang and Hong Guo, “Structure and Dielectric Properties of Amorphous High-κ Oxides: HfO2, ZrO2 and their alloys”, Physical Review B 85, 224110, 2012.
  116. Feng Jiang, Jinshuang Jin, Shikuan Wang, and Yijing Yan, “Inelastic electron transport through mesoscopic systems: Heating versus cooling and sequential, tunneling versus cotunneling processes”, Physical Review B 85, 245427, 2012.
  117. B. Wang, Y.D. Wei, and J. Wang, “First-principles calculation of the Andreev conductance of carbon wires”, Physical Review B 86, 035414, 2012.
  118. Lei Zhang, Yanxia Xing, and Jian Wang, “First-principles investigation of transient dynamics of molecular devices”, Physical Review B 86, 155438, 2012.
  119. Lei Zhang, Bin Wang, and Jian Wang, “First-principles investigation of alternating current density distribution in molecular devices”, Physical Review B 86, 165431, 2012.
  120. H.L. Zeng, B.R. Zhu, K. Liu, J.H. Fan, X.D. Cui, Q. M. Zhang, “Low-frequency Raman modes and electronic excitations in atomically thin MoS2 films*”, Physical Review B 86, 241301(R), 2012.
  121. Zhen Hua Li, Ning Hua Tong, Xiao Zheng, Dong Hou, Jian Hua Wei, Jie Hu, and Yi Jing Yan, “Hierarchical Liouville-Space Approach for Accurate and Universal Characterization of Quantum Impurity System”, Physical Review Letters 109,266403, 2012.
  122. Xiao Zheng, Ruixue Xu, Jian Xu, Jinshuang Jin, Jie Hu, Yijing Yan, “Hierarchical Equations of Motion for Quantum Dissipation and Quantum Transport”, Progress in Chemistry, Vol 24, 6, 1150-1151, 2012.
  123. W.Y. Mao, L.J. Jiang, and W.C. Chew, “An efficient method for computing highly oscillatory physical optics integral”, Progress In Electromagnetics Research (PIER), vol. 127, pp. 211-257, 2012.
  124. P. Li and L.J. Jiang, “The Far Field Transformation for The Antenna Modeling Based on Spherical Electric Field Measurements”, Progress in Electromagnetics Researches (PIER), vol. 123, pp. 243-261, 2012.
  125. Siu Kai Choy, Ningning Jia, Chong Sze Tong, Man Lai Tang, and Edmund Y. Lam, “A robust computational algorithm for inverse photomask synthesis in optical projection lithography”, SIAM Journal on Imaging Sciences, vol. 5, no. 2, pp. 625–651, 2012.
  126. Jin-Jin Ding, Rui-Xue Xu, and Yi Jing Yan, “Optimizing hierarchical equations of motion for quantum dissipation and quantifying quantum bath effects on quantum transfer mechanisms”, The Journal Of Chemical Physics 136, 224103, 2012.
  127. Heng Tian and GuanHua Chen, “An efficient solution of Liouville-von Neumann equation that is applicable to zero and finite temperatures”, The Journal of Chemical Physics 137(20):204114, 2012.
  128. H. Xie, F. Jiang, H. Tian, X. Zheng, Y. Kwok, S.G. Chen, C. Yam, Y.J. Yan, G.H. Chen, “Time-dependent quantum transport: An efficient method based on Liouville-von-Neumann equation for single-electron density matrix”, The Journal of Chemical Physics Vol. 137, 044113, 2012.
  129. J.N. Zhuang, L. Zhang, and J. Wang, “First principles calculation of ac conductance for Al-BDT-Al and Al-Cn-Al systems”, AIP Advances 1, 042, 2011.
  130. Jian Xu, Rui-xue Xu, Darius Abramavicius, Hou-dao Zhang, and Yijing Yan, “Advancing Hierarchical Equations of Motion for Efficient Evaluation of Coherent Two-dimensional Spectroscopy”, Chinese Journal of Chemical Physics, Vol 24, Number 5, 497-505, 2011.
  131. Lining Zhang, Lin Li, Jin He and Mansun Chan, “Modeling Short Channel Effect of Elliptical Gate-All-Around MOSFET by Effective Radius*”, IEEE Electron Device Letters, Vol. 32, No. 9, September 2011, pp. 1188-1190, 2011.
  132. Y.P. Chen, L. Jiang, Z.G. Qian, and W.C. Chew, “An augmented electric field integral equation for layered medium Green’s function”, IEEE Transactions on Antennas & Propagation, vol. 59, no. 3, pp. 960-968, 2011.
  133. Y.P. Chen, J.L. Xiong, and W. C. Chew, “A mixed-form thin-stratified medium fast-multipole algorithm for both low and mid-frequency problems”, IEEE Transactions on Antennas & Propagation, vol. 59, no. 6, pp. 2341-2349, 2011.
  134. Quan Chen, Wim Schoenmaker, Peter Meuris and Ngai Wong, “An effective formulation of coupled electromagnetic-TCAD simulation for extremely high frequency onwards”, IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, Vol. 30, No. 6, pp. 866-876, 2011.
  135. Lining Zhang, Haijun Lou, Jin He and Mansun Chan, “Uniaxial Strain Effect on Electron Ballistic Transport in Gate-All-Around Silicon Nanowire MOSFET*”, IEEE Transactions on Electron Devices, vol. 58, no. 11, November 2011, pp. 3829-3836, 2011.
  136. Lap K. Yeung and Ke-Li Wu, “Generalized Partial Element Equivalent Circuit (PEEC) Modeling With Radiation Effect”, IEEE Transactions on Microwave Theory and Techniques, 59, 2377–2384, 2011.
  137. Ningning Jia and Edmund Y. Lam, “Pixelated source mask optimization for process robustness in optical lithography”, Optics Express, vol. 19, no. 20, pp. 19384–19398, 2011.
  138. Yijiang Shen, Ningning Jia, Ngai Wong, and Edmund Y. Lam, “Robust level-set-based inverse lithography”, Optics Express, vol. 19, no. 6, pp. 5511–5521, 2011.
  139. X. Zheng, C. Y. Yam, F. Wang, G. H. Chen, “Existence of time-dependent density-functional theory for open electronic systems: Time-dependent holographic electron density theorem”, Physical Chemistry Chemical Physics 13, 14358–14364, 2011.
  140. C. Y. Yam, L. Y. Meng, G. H. Chen, Q. Chen, N. Wong, “Multiscale quantum mechanics/ electromagnetics simulation for electronic device”, Physical Chemistry Chemical Physics 13, 14365–14369, 2011.
  141. Y.X. Xing, J. Wang, and Q.F. Sun, “Parity of specular Andreev reflection under a mirror operation in a zigzag graphene ribbon”, Physical Review B 83, 205418, 2011.
  142. Lei Zhang, Bin Wang, and Jian Wang, “First-principles calculation of current density in molecular devices”, Physical Review B 84, 115412, 2011.
  143. B. Wang and J. Wang, “Spin polarized I-V characteristics and shot noise of Pt atomic wires”, Physical Review B 84, 165401, 2011.
  144. C.Y. Yam, G.H. Chen, Y. Wang, Th. Frauenheim and T. Niehaus, “Time-dependent versus static quantum transport simulations beyond linear response”, Physical Review B, Vol. 83, No. 24, 245448, 2011.
  145. JunYan Luo, Yu Shen, Xiao-Ling He, Xin-Qi Li, Yijing Yan, “Full counting statistics of renormalized dynamics in open quantum transport system”, Physics Letters A 376 (2011) 59–64, 2011.
  146. Y. A. Wang, C. Y. Yam, Y. K. Chen, G. H. Chen, “Communication: Linear-expansion shooting techniques for accelerating self-consistent field convergence”, The Journal of Chemical Physics 134, 241103, 2011.
  147. Jie Hu, Meng Luo, Feng Jiang, Rui-Xue Xu, and Yijing Yan, “Padé spectrum decompositions of quantum distribution functions and optimal hierarchical equations of motion construction for quantum open systems”, The Journal of Chemical Physics 134, 244106, 2011.
  148. F. Wang, C.Y. Yam, L.H. Hu, G. H. Chen, “Time-dependent density functional theory based Ehrenfest dynamics*”, The Journal of Chemical Physics 135, 044126, 2011.
  149. Jin-Jin Ding, Jian Xu, Jie Hu, Rui-Xue Xu, and Yijing Yan, “Optimized hierarchical equations of motion theory for Drude dissipation and efficient implementation to nonlinear spectroscopies”, The Journal Of Chemical Physics 135, 164107, 2011.
  150. Kun-Bo Zhu, Rui-Xue Xu, Hou Yu Zhang, Jie Hu, and Yijing Yan, “Hierarchical Dynamics of Correlated SystemEnvironment Coherence and Optical Spectroscopy”, The Journal of Physical Chemistry B, 115, 5678–5684, 2011.
  151. S.Z. Wen, S.K. Koo, C.Y. Yam, X. Zheng, Y.J. Yan, Z.M. Su, K.N. Fan, L. Cao, W.P. Wen, and G.H. Chen, “Time-dependent current distributions of a two-terminal carbon nanotube-based electronic device”, The Journal of Physical Chemistry B, Vol. 115, No. 18, pp. 5519-5525, 2011.
  152. Yang G. Liu, Weng Cho Chew, Li Jun Jiang and Zhi Guo Qian, “A Memory Saving Fast A-EFIE Solver for Modeling Low-Frequency Large Scale Problems”, Applied Numerical Mathematics, 62, 682–698, 2010.
  153. Yang G. Liu and Weng Cho Chew, “A Low Frequency Vector Fast Multipole Algorithm with Vector Addition Theorem”, Communications in Computational Physics, Vol. 8, No. 5, pp. 1183-1207, 2010.
  154. P.R. Atkins and W.C. Chew, “Fast computation of the dyadic green's function for layered media via interpolation”, IEEE Antennas Wireless Propagation Letters, Vol. 9, pp. 493-496, 2010.
  155. Edmund Y. Lam and Alfred K. Wong, “Nebulous hotspot and algorithm variability in computation lithography”, Journal of Micro/Nanolithography, MEMS, and MOEMS, 9, 033002, 2010.
  156. Ningning Jia and Edmund Y. Lam, “Machine learning for inverse lithography: Using stochastic gradient descent for robust photomask synthesis”, Journal of Optics, 12, 045601, 2010.
  157. Junfeng Dai, Hai-Zhou Lu, C. L. Yang, Shun-Qing Shen, Fu-Chun Zhang, and Xiaodong Cui, “Magnetoelectric Photocurrent generated by direct interband transition in InGaAs/InAlAs two dimensional electron gas”, Physical Review Letters, 104, 246601, 2010.
  158. J.L. Xiong, M.S. Tong, P. Atkins, and W.C. Chew, “Efficient evaluation of casimir force in arbitrary three-dimensional geometries by integral equation methods”, Physics Letter A, Vol. 374, pp. 2517-2520, 2010.
  159. Jie Hu, Rui-Xue Xu, and Yijing Yan, “Communication: Padé spectrum decomposition of Fermi function and Bose function”, The Journal of Chemical Physics 133, 101106, 2010.
  160. Bao-Ling Tian, Jin-Jin Ding, Rui-Xue Xu, and Yijing Yan, “Biexponential theory of Drude dissipation via hierarchical quantum master equation”, The Journal of Chemical Physics 133, 114112, 2010.
  161. X. Zheng, G.H. Chen, Y. Mo, S.K. Koo. H. Tian, C.Y. Yam and Y.J. Yan, “Time-dependent density functional theory for quantum transport”, The Journal of Chemical Physics, Vol. 133, 114101, 2010.
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