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Abstract

GaInP is a technologically important energy material for fabricating high-efficiency multi-junction solar cells. Meanwhile, it is also an important luminescent material for fabricating red color light emitting devices. Among various behaviors of carriers in GaInP alloy, localization and radiative recombination are highly interested issues. In this work, we report an interesting observation: remarkable transition of radiative recombination mechanism of carriers in GaInP layer from luminescence of deeply localized states to light emission of shallowly localized states in a GaInP solar cell by temperature dependent electroluminescence (EL) measurement. It is found that temperature and injection current have significant influence on this transition process. Either higher temperature or stronger injection current clearly boosts the luminescence mechanism transition. To interpret this mechanism transition, the localized states ensemble (LSE) luminescence model was used. And effective thermal activation barrier was developed to describe the effects of temperature and injection current. Our theoretical analysis agrees well with experimental data and provides a precise picture for anomalous temperature dependent luminescence behaviors in similar systems.